Abstract: An acoustic wave device includes a piezoelectric substrate, a first wiring disposed on an upper surface of the piezoelectric substrate, an organic insulator covering at least a portion of the first wiring, a second wiring disposed on a first portion of the upper surface of the organic insulator, and an inorganic insulator covering at least a second portion of an upper surface of the organic insulator. The second portion of the upper surface of the organic insulator faces an oscillation space across the inorganic insulator. The acoustic wave device has preferable high-frequency characteristics and high long-term reliability.

Abstract: An elastic wave device has the following elements: a piezoelectric substrate; an inter-digital transducer (IDT) electrode disposed on the piezoelectric substrate; internal electrodes disposed above the piezoelectric substrate and electrically connected to the IDT electrode; side walls disposed above the internal electrodes surrounding the IDT electrode; a cover disposed above the side walls so as to cover a space above the IDT electrode; an electrode base layer disposed on the internal electrodes outside the side walls; and connection electrodes disposed on the electrode base layer. Each connection electrode has a first connection electrode disposed on the electrode base layer, and a second connection electrode disposed on the first connection electrode. The horizontal sectional shape of the second connection electrode is non-circular.

Abstract: An elastic wave device has the following elements: a piezoelectric substrate; an inter-digital transducer (IDT) electrode disposed on the piezoelectric substrate; internal electrodes disposed above the piezoelectric substrate and electrically connected to the IDT electrode; side walls disposed above the internal electrodes surrounding the IDT electrode; a cover disposed above the side walls so as to cover a space above the IDT electrode; an electrode base layer disposed on the internal electrodes outside the side walls; and connection electrodes disposed on the electrode base layer. Each connection electrode has a first connection electrode disposed on the electrode base layer, and a second connection electrode disposed on the first connection electrode. The horizontal sectional shape of the second connection electrode is non-circular.

Abstract: An acoustic wave device includes a piezoelectric substrate, a first wiring disposed on an upper surface of the piezoelectric substrate, an organic insulator covering at least a portion of the first wiring, a second wiring disposed on a first portion of the upper surface of the organic insulator, and an inorganic insulator covering at least a second portion of an upper surface of the organic insulator. The second portion of the upper surface of the organic insulator faces an oscillation space across the inorganic insulator. The acoustic wave device has preferable high-frequency characteristics and high long-term reliability.

Abstract: An elastic wave device has the following elements: a piezoelectric substrate; an inter-digital transducer (IDT) electrode disposed on the piezoelectric substrate; internal electrodes disposed above the piezoelectric substrate and electrically connected to the IDT electrode; side walls disposed above the internal electrodes surrounding the IDT electrode; a cover disposed above the side walls so as to cover a space above the IDT electrode; an electrode base layer disposed on the internal electrodes outside the side walls; and connection electrodes disposed on the electrode base layer. Each connection electrode has a first connection electrode disposed on the electrode base layer, and a second connection electrode disposed on the first connection electrode. The horizontal sectional shape of the second connection electrode is non-circular.

Abstract: An actuator includes a base, an arm having an elastic property and supported by the base, electrostatic-driving electrodes provided on the base and the arm, respectively, and a piezoelectric-driving layer. The piezoelectric-driving layer includes a first electrode layer on the arm, a piezoelectric layer on the first electrode layer, and a second electrode layer on the piezoelectric layer. This actuator can be driven quickly with a low voltage.

Abstract: An actuator includes a base, an arm having an elastic property and supported by the base, electrostatic-driving electrodes provided on the base and the arm, respectively, and a piezoelectric-driving layer. The piezoelectric-driving layer includes a first electrode layer on the arm, a piezoelectric layer on the first electrode layer, and a second electrode layer on the piezoelectric layer. This actuator can be driven quickly with a low voltage.

Abstract: The resistor of the present invention comprises a substrate, a pair of upper electrode layers disposed on one surface of the substrate, and a resistor layer connected to the pair of upper electrode layers, wherein the upper electrode layer includes a first thin film layer that strongly adheres to the substrate and the resistor layer, and a second thin film layer having volume resistivity lower than the volume resistivity of the first upper electrode thin film layer. Further, the resistor of the present invention comprises a pair of side electrodes, electrically connected to the upper electrode layers, at the end portion of the substrate, and the side electrode includes a first side thin film layer and a second side thin film layer, and the material that forms the second side thin film layer has a solid solubility with the first side thin film layer.

Abstract: A first capacitor element of a sheet form includes a porous valve metal film, a dielectric layer provided on the porous valve metal film, a solid electrolyte layer provided on the dielectric layer, and a collector layer provided on the solid electrolyte layer. A second capacitor element of a sheet form includes a valve metal film, a porous valve metal body provided on the valve metal film, a dielectric layer provided on the porous valve metal body, a solid electrolyte layer provided on the dielectric layer, and a collector layer provided on the electrolyte layer. The first and second capacitor elements are stacked. The porous valve metal film of the first capacitor element and the valve metal film of the second capacitor element are connected to one external electrode while the collector layers of the first and second capacitor elements are connected to another external electrode, thus providing a solid electrolytic capacitor.

Abstract: The present invention aims to provide a circuit module that includes a sheet-like solid electrolytic capacitor and reduces an area and volume required for mounting electronic components. In the sheet-like solid electrolytic capacitor, valve metal sheet 11 has dielectric layer 13 and current collector layer 12 formed on the surface thereof, and is packaged by insulators 14 and 15. The circuit module is structured to embed the sheet-like solid electrolytic capacitor in a circuit board.

Abstract: A dielectric coating, a solid electrolytic layer and a collector layer are provided to one face of a porous valve metal sheet. An insulating section covers this metal sheet including the layers discussed above. Conductive bodies, which are coupled with a first connecting terminal and a second connecting terminal, respectively, are surfaced on at least one face of the insulating section. Connecting bumps are formed on these conductive bodies, so that ICs and other parts are coupled with these bumps. This structure realizes a thin composite electronic component having an excellent high-frequency response.

Abstract: The present invention aims to provide a circuit module that includes a sheet-like solid electrolytic capacitor and reduces an area and volume required for mounting electronic components. In the sheet-like solid electrolytic capacitor, valve metal sheet 11 has dielectric layer 13 and current collector layer 12 formed on the surface thereof, and is packaged by insulators 14 and 15. The circuit module is structured to embed the sheet-like solid electrolytic capacitor in a circuit board.

Abstract: A first capacitor element of a sheet form includes a porous valve metal film, a dielectric layer provided on the porous valve metal film, a solid electrolyte layer provided on the dielectric layer, and a collector layer provided on the solid electrolyte layer. A second capacitor element of a sheet form includes a valve metal film, a porous valve metal body provided on the valve metal film, a dielectric layer provided on the porous valve metal body, a solid electrolyte layer provided on the dielectric layer, and a collector layer provided on the electrolyte layer. The first and second capacitor elements are stacked. The porous valve metal film of the first capacitor element and the valve metal film of the second capacitor element are connected to one external electrode while the collector layers of the first and second capacitor elements are connected to another external electrode, thus providing a solid electrolytic capacitor.

Abstract: A dielectric coating (3), a solid electrolytic layer (4) and a collector layer (5) are provided to one face of a porous valve metal sheet (1). An insulating section (7) covers overall this metal sheet (1) including the layers (3, 4, 5) discussed above. Conductive bodies (101, 111), which are coupled with a first connecting terminal (2) and a second connecting terminal (6) respectively, are surfaced on at least one face of the insulating section (7). Connecting bumps (12) are formed on these conductive bodies (101, 111), so that ICs (17) and other parts are coupled with these bumps (12). This structure realizes a thin composite electronic component excellent in high-frequency response.

Abstract: The resistor of the present invention comprises a substrate, a pair of upper electrode layers disposed on one surface of the substrate, and a resistor layer connected to the pair of upper electrode layers, wherein the upper electrode layer includes a first thin film layer that strongly adheres to the substrate and the resistor layer, and a second thin film layer having volume resistivity lower than the volume resistivity of the first upper electrode thin film layer. Further, the resistor of the present invention comprises a pair of side electrodes, electrically connected to the upper electrode layers, at the end portion of the substrate, and the side electrode includes a first side thin film layer and a second side thin film layer, and the material that forms the second side thin film layer has a solid solubility with the first side thin film layer.

Abstract: A solid electrolytic capacitor of the present invention includes a sheet of valve metal, of which a part constitutes an positive electrode, a dielectric layer formed on a surface of the valve metal, a solid electrolyte layer formed on the dielectric layer, a negative electrode formed on the solid electrolyte layer, and an insulating protective layer for protecting the positive electrode, the dielectric layer, the solid electrolyte layer and the negative electrode. It is further provided with a bump formed on the insulating protective layer and connected to at least one of the positive electrode and the negative electrode. The solid electrolytic capacitor of the present invention is useful to constitute a semiconductor device or a circuit having outstanding high frequency response.

Abstract: A solid electrolytic capacitor of the present invention comprises a sheet of valve metal, of which a part constitutes an positive electrode, a dielectric layer formed on a surface of the valve metal, a solid electrolyte layer formed on the dielectric layer, a negative electrode formed on the solid electrolyte layer, and an insulating protective layer for protecting the positive electrode, the dielectric layer, the solid electrolyte layer and the negative electrode. It is further provided with a bump formed on the insulating protective layer and connected to at least one of the positive electrode and the negative electrode. The solid electrolytic capacitor of the present invention is useful to constitute a semiconductor device or a circuit having outstanding high frequency response.

Abstract: A capacitor comprising a porous metal sheet, part of which forms an electrode section, an organic dielectrics formed on a metal surface, a solid electrolyte layer formed on the organic dielectrics, an electrode layer formed on the solid electrolyte layer, and an insulating protection layer provided for protecting said electrode section, dielectrics, solid electrolyte layer and electrode layer. The capacitor is provided with bumps, which are formed on the insulating protection layer and connected at least with the electrode section or the electrode layer. The capacitor of the present invention provides a semiconductor device or a circuit superior in the high frequency response.

Abstract: A capacitor comprising a porous metal sheet, part of which forms an electrode section, an organic dielectrics formed on a metal surface, a solid electrolyte layer formed on the organic dielectrics, an electrode layer formed on the solid electrolyte layer, and an insulating protection layer provided for protecting said electrode section, dielectrics, solid electrolyte layer and electrode layer. The capacitor is provided with bumps, which are formed on the insulating protection layer and connected at least with the electrode section or the electrode layer. The capacitor of the present invention provides a semiconductor device or a circuit superior in the high frequency response.