Abstract: An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

Abstract: A semiconductor device comprises a substrate comprising a semiconductor monocrystalline substrate on one principal surface side of which a light-transmitting film is formed, the substrate being prepared by removing from the other principal surface side thereof a semiconductor monocrystalline region present right beneath the light-transmitting film, a non-monocrystalline semiconductor element formed on the light-transmitting film, and a monocrystalline semiconductor element formed in a semiconductor monocrystalline region remaining in the substrate, the non-monocrystalline semiconductor element and the monocrystalline semiconductor element being electrically connected.

Abstract: An ink jet head provided with discharging orifices for discharging ink, which includes a substrate having a supporting member having at least a surface having substantially insulating properties and a plurality of diodes provided on the supporting member, the diodes each comprising a polycrystalline silicon layer and at least one metal silicide layer, wherein the polycrystalline silicon layer has a p-n junction surface therein.

Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

Abstract: The occupied area of a heater drive circuit of a recording head is reduced, and the number of manufacturing steps is decreased. As a circuitry of the heater drive unit, the final stage of the drive unit is constituted of a pnp or npn bipolar transistor, the heater, which is a load, is connected to the emitter side, and the collectors of each transistor are connected commonly to the base itself and grounded. The prestage of the drive unit is formed of the prestage of a MOS type element whose polarities are reversed to those of the final stage, i.e., an n-type MOS transistor with respect to the final stage of a pnp bipolar transistor and a p-type MOS transistor with respect to the final stage of a npn bipolar transistor, and the source of the prestage is grounded.

Abstract: A chemical vapor deposition apparatus comprises a starting material container holding a starting material in a liquid state, a starting gas generating container into which the liquid starting material is fed from the starting material container, a means for keeping constant the liquid level of the liquid starting material held in the starting gas generating container, a means for injecting a bubbling gas from the outside into the liquid starting material held in the starting gas generating container, thereby bubbling the starting gas, and a reaction chamber into which a mixed gas of the starting gas and the bubbling gas are fed.

Abstract: A semiconductor device with a high-density wiring structure, and a producing method for such device are provided. The semiconductor device has a substrate such as silicon, an insulation layer laminated on the substrate and having a groove or a hole, and a wiring of a conductive material formed in the groove or hole in the insulation layer. The wiring is formed by depositing a conductive material such as aluminum or an aluminum alloy in the groove or hole of the insulation layer by a CVD method utilizing alkylaluminum hydride gas and hydrogen. The groove or hole can be formed by an ordinary patterning method combined with etching.

Abstract: A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.

Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

Abstract: A chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material. The film-forming liquid is pulverized into liquid fine particles which are heated together with a gas to produce a film-forming raw material gas. The film-forming raw material gas is introduced into a reaction chamber where it chemically reacts with a surface of a substrate which is present in the reaction chamber.

Abstract: A method of manufacturing a semiconductor device having a titanium silicide layer comprises the steps of forming a silicon layer and titanium layer on a polysilicon layer, washing a surface of the silicon layer, and heat treating the titanium layer after washing to make the titanium layer a titanium silicide.

Abstract: An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

Abstract: An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

Abstract: A chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material in which said film-forming liquid raw material is pulverizing into liquid fine particles and said liquid fine particles are heated together with a gas to produce a film-forming raw material gas; said film-forming raw material gas is introduced into a reaction chamber; and said film-forming raw material gas is chemically reacted with a surface of a substrate disposed in said reaction chamber.

Abstract: A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first conductivity type and a second semiconductor region of the first conductivity type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second conductivity type, and an emitter region including a semiconductor region of the first conductivity type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region.

Abstract: A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first conductivity type and a second semiconductor region of the first conductivity type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second conductivity type, and an emitter region including a semiconductor region of the first conductivity type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region.