Abstract: The present invention is aimed to perform precise monitoring of the processed amount by which a workpiece is processed, and includes a measurement unit that measures a concentration or a partial pressure of a reaction product generated while the workpiece is being processed, and an operation unit that calculates the processed amount of the workpiece using an output value of the measurement unit. The measurement unit includes: a laser light source that irradiates target gas containing the reaction product with a laser beam; a photodetector that detects a laser beam having passed through the target gas; and a signal processing unit that calculates the concentration or the partial pressure of the reaction product based on a detection signal of the photodetector. The operation unit includes a time integration unit; a relationship data storage unit; and a processed amount calculation unit.

Abstract: One or more servers (11) communicate with one or more applications running on each of a plurality of wireless terminals (2) via a first or second cellular communication network (3, 4). Depending on a load of the first cellular communication network, the one more servers (11) select from the first and second cellular communication networks (3, 4) a cellular communication network to be used by each wireless terminal (2) to communicate with the one more servers (11). The one more servers (11) send to each wireless terminal (2) a control message to prompt each wireless terminal (2) to use the selected network. This for example makes it possible to select among a plurality of cellular communication networks in consideration of load status of the cellular communication networks.

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract: One or more servers (11) communicate with one or more applications running on each of a plurality of wireless terminals (2) via a first or second cellular communication network (3, 4). Depending on a load of the first cellular communication network, the one more servers (11) select from the first and second cellular communication networks (3, 4) a cellular communication network to be used by each wireless terminal (2) to communicate with the one more servers (11). The one more servers (11) send to each wireless terminal (2) a control message to prompt each wireless terminal (2) to use the selected network. This for example makes it possible to select among a plurality of cellular communication networks in consideration of load status of the cellular communication networks.

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.

Abstract: To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate.

Abstract: A semiconductor device includes a lead frame, a semiconductor chip, a substrate, a plurality of chip parts, a plurality of wires, and a resin member. The lead frame includes a chip mounted section and a plurality of lead sections. The semiconductor chip is mounted on the chip mounted section. The substrate is mounted on the chip mounted section. The chip parts are mounted on the substrate. Each of the chip parts has a first end portion and a second end portion in one direction, and each of the chip parts has a first electrode at the first end portion and a second electrode at the second end portion. Each of the wires couples the second electrode of one of the chip parts and one of the lead sections. The resin member covers the lead frame, the semiconductor chip, the substrate, the chip parts, and the wires.

Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: A semiconductor device includes a base substrate made of silicon, a cap substrate and a leading electrode having a metal part. The base substrate has base semiconductor regions being insulated and separated from each other at a predetermined portion of a surface layer thereof. The cap substrate is bonded to the predetermined portion of the surface layer of the base substrate. The leading electrode has a first end connected to one of the plurality of base semiconductor regions of the base substrate and extends through the cap substrate such that a second end of the leading electrode is located adjacent to a surface of the cap substrate for allowing an electrical connection with an external part, the surface being opposite to a bonding surface at which the base substrate and the cap substrate are bonded. The leading electrode defines a groove between an outer surface thereof and the cap substrate.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract: A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.

Abstract: It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.