Patents by Inventor Tetsuo Furihata

Tetsuo Furihata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5082163
    Abstract: A non-oxide ceramic material such as aluminum nitride can be metallized with copper by directly bonding a thin sheet of copper to a substrate of the non-oxide ceramic material instead of using a conventional manner in which a paste comprising a powder of copper and a binder is applied to a ceramic substrate by printing. This metallization is effected by placing the non-oxide ceramic material either in contact with or in close proximity to copper containing a copper oxide, followed by heating them in a non-oxidizing atmosphere at a temperature lower than the melting point of copper, but at which the dissociation of the copper oxide contained in copper can occur, so as to dissociate at least part of the copper oxide into metallic copper and oxygen to thereby provide a strong bondage between the surfaces of said non-oxide ceramic material and copper. The metallized non-oxide ceramic material can be used as a substrate for use in IC devices.
    Type: Grant
    Filed: December 15, 1989
    Date of Patent: January 21, 1992
    Assignee: Dowa Mining Co., Ltd.
    Inventors: Naoyuki Kanahara, Tetsuo Furihata
  • Patent number: 4811893
    Abstract: A novel method for directly bonding a copper plate to an alumina substrate is disclosed. Also disclosed is a process by which bonded assembles of copper plate and alumina substrate can be produced in large volumes on an industrial scale in high yield and at low cost employing a simplified sequence of steps. According to this process, a copper plate is positioned in contact with an alumina substrate in an inert atmosphere, and the combination is heated to a temperature lower than the melting point of copper (1,083.degree. C.), preferably to a temperature lower than the eutectic point of copper-copper oxide eutectic, for example, to 1,063.degree. C..+-.0.5.degree. C.
    Type: Grant
    Filed: November 30, 1987
    Date of Patent: March 14, 1989
    Assignee: Dowa Mining Co., Ltd.
    Inventors: Naoyuki Kanahara, Masahiro Furo, Tetsuo Furihata