Abstract: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer.

Abstract: A bias ECR plasma CVD apparatus includes an ECR plasma generating chamber and a plasma CVD chamber for forming a film on a substrate by a plasma CVD reaction. A heating device and a cooling device are provided at least in the vicinity of the substrate for maintaining the substrate and the vicinity thereof at a constant temperature. With this construction, the number of contaminant particles deposited on a surface of the substrate in forming the film on the substrate can be reduced.

Abstract: A semiconductor device manufacturing process and a bias ECRCVD apparatus for the process. The semiconductor device manufacturing process comprises the steps of forming trenches in the surface of a substrate, forming an insulating film by bias ECRCVD over the surface of the substrate, etching the insulating film by lateral leveling etching so as to expand the width of grooves formed in portions of the insulating film which are formed in regions other than those corresponding to the trenches, masking the portions of the insulating film which fill the trenches and removing the portions of the insulating film formed in the regions other than those corresponding to the trenches.