Abstract: This invention relates to a method for manufacturing a cation exchange resin, wherein the method includes the steps of: copolymerizing a monovinyl aromatic monomer and a cross-linkable aromatic monomer to obtain a cross-linked copolymer; specifying a content of a leachable compound represented by formula (I) to be 400 ?g or less relative to 1 g of the cross-linked copolymer, wherein Z represents a hydrogen atom or an alkyl group, and l represents a natural number; and then sulfonating the cross-linked copolymer to form a sulfonylated cross-linked copolymer.

Abstract: The invention relates to a method for manufacturing an anion exchange resin, wherein the method includes the step of contacting a water soluble polymer containing an anionic dissociative group with a resin to produce an anion exchange resin. In the method, an amount of contact of the water soluble polymer is 0.01 to 10 mmol/L, in terms of an amount of the anionic dissociative group, relative to 1 liter of the anion exchange resin, and a wafer surface flatness (Rms) of the anion exchange resin is 4 ? or less, determined by a silicon wafer test.

Abstract: A method for manufacturing an anion exchange resin, in which remaining of impurities and generation of decomposition products are suppressed and leachables are reduced, the method including the following steps (1-a) to (1-e) of: (1-a) obtaining a cross-linked copolymer by copolymerizing a monovinyl aromatic monomer and a cross-linkable aromatic monomer; (1-b) specifying the content of a specific leachable compound to be 400 ?g or less relative to 1 g of the cross-linked copolymer; (1-c) haloalkylating the cross-linked copolymer so as to introduce 80 percent by mole or less of haloalkyl group relative to the monovinyl aromatic monomer; (1-d) removing a specific leachable compound from the haloalkylated cross-linked copolymer; and (1-e) subjecting the haloalkylated cross-linked copolymer to a reaction with an amine compound.

Abstract: The invention relates to a method for manufacturing an anion exchange resin, wherein the method includes the step of contacting a water soluble polymer containing an anionic dissociative group with a resin to produce an anion exchange resin. In the method, an amount of contact of the water soluble polymer is 0.01 to 10 mmol/L, in terms of an amount of the anionic dissociative group, relative to 1 liter of the anion exchange resin, and a wafer surface flatness (Rms) of the anion exchange resin is 4 ? or less, determined by a silicon wafer test.

Abstract: This invention relates to a method for manufacturing a cation exchange resin, wherein the method includes the steps of: copolymerizing a monovinyl aromatic monomer and a cross-linkable aromatic monomer to obtain a cross-linked copolymer; specifying a content of a leachable compound represented by formula (I) to be 400 ?g or less relative to 1 g of the cross-linked copolymer, wherein Z represents a hydrogen atom or an alkyl group, and l represents a natural number; and then sulfonating the cross-linked copolymer to form a sulfonylated cross-linked copolymer.

Abstract: The invention provides a wafer washing technique which does not require complicated operations and by which a wafer is washed with ultrapure water through relatively simple operations without contaminating the wafer surface with metals even if the ultrapure water contains metal ions on the ng/L (ppt) level. Wafer washing water includes ultrapure water to which a substance having an affinity for metal ions has been added. A wafer washing method uses this wafer washing water. A substance that exhibits an affinity for metal ions is added beforehand to wafer washing ultrapure water. As a result, the substance captures metal ions present in the ultrapure water and stabilizes them in water, thereby effectively preventing the metal ions from migrating toward the wafer surface and becoming attached to the wafer surface during washing.

Abstract: A water quality evaluation method capable of evaluating quality of water to be evaluated with high precision and a substrate contacting apparatus used in the water quality evaluation method are provided. The substrate contacting apparatus 10 has a sealing performance keeping the interior at a vacuum degree lower than or equal to ?0.094 MPa. A substrate W is accommodated in the substrate contacting apparatus 10 and water to be evaluated is fed therein, after stopping feeding water, the interior of the substrate contacting apparatus 10 is sealed, and the substrate contacting apparatus 10 is sent to an analysis device with the substrate W accommodated therein.

Abstract: A method for manufacturing an anion exchange resin, in which remaining of impurities and generation of decomposition products are suppressed and leachables are reduced, the method including the following steps (1-a) to (1-e) of: (1-a) obtaining a cross-linked copolymer by copolymerizing a monovinyl aromatic monomer and a cross-linkable aromatic monomer; (1-b) specifying the content of a specific leachable compound to be 400 ?g or less relative to 1 g of the cross-linked copolymer; (1-c) haloalkylating the cross-linked copolymer so as to introduce 80 percent by mole or less of haloalkyl group relative to the monovinyl aromatic monomer; (1-d) removing a specific leachable compound from the haloalkylated cross-linked copolymer; and (1-e) subjecting the haloalkylated cross-linked copolymer to a reaction with an amine compound.

Abstract: A water quality evaluation method capable of evaluating quality of water to be evaluated with high precision and a substrate contacting apparatus used in the water quality evaluation method are provided. The substrate contacting apparatus 10 has a sealing performance keeping the interior at a vacuum degree lower than or equal to ?0.094 MPa. A substrate W is accommodated in the substrate contacting apparatus 10 and water to be evaluated is fed therein, after stopping feeding water, the interior of the substrate contacting apparatus 10 is sealed, and the substrate contacting apparatus 10 is sent to an analysis device with the substrate W accommodated therein.

Abstract: An apparatus for producing water containing dissolved ozone which comprises (A) a piping for supplying ultrapure water through which ultrapure water is supplied, (B) a catalytic reaction portion which is connected with the piping for supplying ultrapure water and in which the ultrapure water is brought into contact with an oxidation-reduction catalyst, (C) a filtration apparatus by which the ultrapure water treated in the catalytic reaction portion is filtered and (D) an apparatus for dissolving ozone in which ozone is dissolved into the ultrapure water discharged from the filtration apparatus; and an apparatus for producing water containing dissolved ozone which comprises an apparatus for producing ultrapure water which is equipped with an apparatus for irradiating with ultraviolet light, an apparatus for dissolving ozone in which ozone is dissolved into the ultrapure water produced in the apparatus for producing ultrapure water and a catalytic reaction portion which is packed with an oxidation-reduction cat

Abstract: A cleaning solution for electronic materials contains dissolved oxygen gas at a concentration greater than atmospheric saturation concentration, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. Alternatively, the cleaning solution contains dissolved reducing agents, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. A method for making the cleaning solution of the present invention is provided. A method for cleaning electronic materials using the cleaning solution of the present invention is also provided.

Abstract: An ozonated ultrapure water supply system that prevents reduction of the dissolved ozone concentration in the supply pipe system and maintains the dissolved ozone at points of use along the supply system at desired concentrations. This permits the system to supply ozonated water in long pipes. The system includes a sequential arrangement of a circulatory main pipe 3 for supplying ultrapure water, an ozonated gas supplying device 4, and at least two output branch lines 8 each having a gas/liquid separation device 9 and an ultimate point of use 7. The output branch lines are spaced downstream from the ozonated gas supplying device such that the ozone concentration in the ultrapure water has increased to a stable level and the ozonated ultrapure water at each output branch line is at this same stable ozone concentration.

Abstract: A cleaning solution for electronic materials contains dissolved oxygen gas at a concentration greater than atmospheric saturation concentration, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. Alternatively, the cleaning solution contains dissolved reducing agents, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. A method for making the cleaning solution of the present invention is provided. A method for cleaning electronic materials using the cleaning solution of the present invention is also provided.

Abstract: A cleaning solution for electromaterials including hydrogen fluoride and either oxygen or hydrogen gas dissolved in water. The cleaning solution may alternatively include hydrogen fluoride, hydrochloric acid or nitric acid, and hydrogen or oxygen gas dissolved in water. Alternatively, the cleaning solution includes hydrogen fluoride, hydrogen peroxide and oxygen gas dissolved in water. The present invention also provides a method for cleaning electromaterials including applying an ultrasonic vibration to cleaning solution applied to electromaterials.

Abstract: A method for removing metallic and organic contaminations from a surface of a semiconductor wafer comprises cleaning the semiconductor wafer with a cleaning solution which contains a chlorine compound acting as an oxidant and which has a pH value in the range of 1 to 3. The cleaning solution has an oxidation-reduction potential in the range of 800 mV to 1200 mV when measured on the basis of a saturated calomel electrode at a temperature 25.degree. C.

Abstract: A method for recovering abrasive particles of, in particular, colloidal silica, in a simple manner from a spent abrasive suspension, which requires subjecting the spent abrasive slurry (5) containing colloidal silica used for polishing a semiconductor substrate in a microfilter (1) to thereby concentrate coarse particulate impurities for being removed out of the system, subjecting the slurry (6) which has permeated through the microfilter to an ultrafiltration in an ultrafilter (2) to concentrate the retained abrasive particles and recovering this concentrate in order to recover the colloidal silica.

Abstract: The ultra-pure water piping system of this invention comprises an inward pipe passing by a series of ultra-pure water using units and running toward the end, an inward pipe running approximately in parallel to said outward pipe and forming the flow of the same direction as said outward pipe, a plurality of connection pipes running from said outward pipe toward said inward pipe, a branching pipe running from said connection pipe to the ultra-pure water using units, and a branching valve to adjust water quantity flowing in the branching pipe, and it is characterized in that said outward pipe is installed at higher position than said inward pipe, and said plurality of connection pipes are used to connect said outward pipe with said inward pipe installed at different height.