Abstract: The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm3 to less than 5.0 g/cm3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.

Abstract: Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule. By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm2 or less per 50 cm2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm2 or less.

Abstract: The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm3 to less than 5.0 g/cm3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.

Abstract: The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm3 to less than 5.0 g/cm3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.

Abstract: Provided is an apparatus that includes a molding die for producing a sintered body. The molding die is configured for cold isostatic pressing and includes a knockdown mold frame comprised of plural frame members and a bottom plate provided in contact with the knockdown mold frame. An upper punch is provided to be movable along the inner surface of the knockdown mold frame. The frame members configured to be movable relative to each other to accommodate an expansion of a green body which takes place at the time of reducing the pressure after the completion of pressing.

Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

Abstract: The invention provides an oxide sintered compact 2 composed of a crystal phase which consists of a bixbite-type oxide phase and a perovskite-type oxide phase, or a bixbite-type oxide phase, the crystal phase having indium, tin, strontium and oxygen as the constituent elements, and the indium, the tin and the strontium contents satisfying formulas (1) and (2) in terms of atomic ratio, as well as a sputtering target. There are further provided an oxide transparent conductive film formed using the sputtering target, and a solar cell. Sn/(In+Sn+Sr)=0.01-0.11??(1) Sr/(In+Sn+Sr)=0.0005-0.004??(2) [In formulas (1) and (2), In, Sn and Sr represent indium, tin and strontium contents (atomic percent), respectively.

Abstract: There is provided a zinc oxide sintered compact with a zirconium content of 10 to 1000 ppm, and a sputtering target containing the zinc oxide sintered compact. There is also provided a zinc oxide thin-film having a zirconium content of 10 to 2000 ppm and a resistivity of 10 ?·cm or greater.

Abstract: Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule. By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm2 or less per 50 cm2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm2 or less.

Abstract: Provided is an apparatus that includes a molding die for producing a sintered body. The molding die is configured for cold isostatic pressing and includes a knockdown mold frame comprised of plural frame members and a bottom plate provided in contact with the knockdown mold frame. An upper punch is provided to be movable along the inner surface of the knockdown mold frame. The frame members configured to be movable relative to each other to accommodate an expansion of a green body which takes place at the time of reducing the pressure after the completion of pressing.

Abstract: Provided is a cylindrical sputtering target which attains a high production yield in a film-forming process even when a film is formed by sputtering with a long cylindrical sputtering target constituted by a plurality of cylindrical target materials. A multi-divided cylindrical sputtering target formed by bonding a cylindrical base and a plurality of cylindrical target materials together with a bonding material has a divided portion where adjacent cylindrical target materials are arranged with a gap therebetween, while outer peripheral faces of the adjacent cylindrical target materials have a step of 0.5 mm or less therebetween in the divided portion. Such a target is obtained by fixing the cylindrical target materials with reference to the outer peripheral faces of the cylindrical target materials when arranging the cylindrical target materials with reference to the cylindrical base.

Abstract: A sintered composite oxide 2 composed mainly of zinc, aluminum, titanium and oxygen, the atomic ratio of the elements satisfying the following equations (1) to (3), the sintered composite oxide 2 comprising particles having a hexagonal wurtzite structure containing zinc oxide as the major component and having a mean particle size of no greater than 20 ?m, and particles having a ZnTiO3-like structure and/or Zn2Ti3O8-like structure containing aluminum and titanium and having a mean particle size of no greater than 5 ?m, and containing no particles with a spinel oxide structure of zinc aluminate with zinc and aluminum in solid solution, and a manufacturing method for the same. (Al+Ti)/(Zn+Al+Ti)=0.004-0.055??(1) Al/(Zn+Al+Ti)=0.002-0.025??(2) Ti/(Zn+Al+Ti)=0.002-0.048??(3) [In the equations, Al, Ti and Zn represent the contents (atomic percents) of aluminum, titanium and zinc, respectively.

Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

Abstract: To provide a cylindrical sputtering target, whereby cracking during sputtering can be remarkably reduced. A cylindrical sputtering target, wherein a cylindrical target material made of ITO or AZO has a relative density of at least 90%; the angle between the grinding direction on its outer circumferential surface and a straight line parallel with its cylindrical axis (out of such angles, ? represents an angle between 0° and 90°) satisfies 45°<??90° or tan ?>?R/L (where R is an outside diameter of the cylindrical target material, and L is the length of the cylindrical target material); and the surface roughness Ra of the outer circumferential surface of the cylindrical target material is at most 3 ?m.

Abstract: The invention provides an oxide sintered compact 2 composed of a crystal phase which consists of a bixbite-type oxide phase and a perovskite-type oxide phase, or a bixbite-type oxide phase, the crystal phase having indium, tin, strontium and oxygen as the constituent elements, and the indium, the tin and the strontium contents satisfying formulas (1) and (2) in terms of atomic ratio, as well as a sputtering target. There are further provided an oxide transparent conductive film formed using the sputtering target, and a solar cell. Sn/(In+Sn+Sr)=0.01-0.11??(1) Sr/(In+Sn+Sr)=0.0005-0.004??(2) [In formulas (1) and (2), In, Sn and Sr represent indium, tin and strontium contents (atomic percent), respectively.

Abstract: The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm3 to less than 5.0 g/cm3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.

Abstract: Provided is an apparatus that includes a molding die for producing a sintered body. The molding die is configured for cold isostatic pressing and includes a knockdown mold frame comprised of plural frame members and a bottom plate provided in contact with the knockdown mold frame. An upper punch is provided to be movable along the inner surface of the knockdown mold frame. The frame members configured to be movable relative to each other to accommodate an expansion of a green body which takes place at the time of reducing the pressure after the completion of pressing.

Abstract: There is provided a zinc oxide sintered compact with a zirconium content of 10 to 1000 ppm, and a sputtering target containing the zinc oxide sintered compact. There is also provided a zinc oxide thin-film having a zirconium content of 10 to 2000 ppm and a resistivity of 10 ?·cm or greater.

Abstract: A sintered composite oxide 2 composed mainly of zinc, aluminum, titanium and oxygen, the atomic ratio of the elements satisfying the following equations (1) to (3), the sintered composite oxide 2 comprising particles having a hexagonal wurtzite structure containing zinc oxide as the major component and having a mean particle size of no greater than 20 ?m, and particles having a ZnTiO3-like structure and/or Zn2Ti3O8-like structure containing aluminum and titanium and having a mean particle size of no greater than 5 ?m, and containing no particles with a spinel oxide structure of zinc aluminate with zinc and aluminum in solid solution, and a manufacturing method for the same. (Al+Ti)/(Zn+Al+Ti)=0.004-0.055??(1) Al/(Zn+Al+Ti)=0.002-0.025??(2) Ti/(Zn+Al+Ti)=0.002-0.048??(3) [In the equations, Al, Ti and Zn represent the contents (atomic percents) of aluminum, titanium and zinc, respectively.

Abstract: Provided is an apparatus that includes a molding die for producing a sintered body. The molding die is configured for cold isostatic pressing and includes a knockdown mold frame comprised of plural frame members and a bottom plate provided in contact with the knockdown mold frame. An upper punch is provided to be movable along the inner surface of the knockdown mold frame. The frame members configured to be movable relative to each other to accommodate an expansion of a green body which takes place at the time of reducing the pressure after the completion of pressing.