Abstract: Provided are a method of manufacturing semiconductor device, a substrate processing apparatus and a recording medium which are capable of efficiently removing a deposited film in a shower head and suppressing generation of particles. The method of manufacturing a semiconductor device includes (a) forming a film on a substrate by supplying a film forming gas and an inert gas to the substrate in a processing chamber via a shower head, and (b) removing a deposited film deposited in the shower head in (a) by supplying to the shower head an inert gas, which has a temperature lower than that of the inert gas supplied in (a), into the shower head without the substrate loaded in the processing chamber.

Abstract: An object detection apparatus includes: an image processing circuit configured to: (i) derive optical flows based on feature points of captured images periodically captured by a camera that captures images of the surroundings of the vehicle; (ii) group the feature points relating to the optical flows based on positions of the feature points to derive one or more groups; and (iii) detect the object based on a size of each of the one or more groups; and a microcomputer that communicates with the image processing circuit and is configured to: (a) obtain a speed of the vehicle; and (b) set a parameter that affects the size of the one or more groups such that as the speed of the vehicle is slower, the size of the one or more groups is greater.

Abstract: A computer-implemented method includes obtaining one of image information of a recording medium placed in a sensing area and tag information attached to the recording medium; obtaining environmental control information corresponding to the obtained one of image information and tag information from a storage; and based on the obtained environmental control information, controlling one or more of a light-emitting device, a display device, an audio device, a temperature control device, an air-flow control device, a vibration device, and an aroma emitting device that are disposed around the sensing area.

Abstract: There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second processing gas plasmatized by a plasma unit to a processing container. The method includes: starting a supply of an electric power to plasmatize the second processing gas to the plasma unit without supplying the second processing gas to the plasma unit; and starting a supply of the second processing gas with the electric power being supplied to the plasma unit.

Abstract: A substrate processing apparatus includes a substrate mounting table on which a substrate is mounted, a process chamber including the substrate mounting table, a gas supply unit configured to supply a gas into the process chamber, and a plasma generating unit configured to convert the gas supplied into the process chamber from the gas supply unit into a plasma state. The plasma generating unit includes a plasma generating chamber configured to serve as a flow path of the gas supplied into the process chamber from the gas supply unit, and a plasma generating conductor configured by a conductor disposed to surround the plasma generating chamber. The plasma generating conductor includes a plurality of main conductor parts extending along a mainstream direction of the gas within the plasma generating chamber, and a plurality of connection conductor parts configured to electrically connect the plurality of main conductor parts with each other.

Abstract: A structure for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein includes an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in a region lower than the substrate arrangement region.

Abstract: A shoe (34) of the present invention includes a sole (32) and an upper (33). The upper (33) is composed of a fabric having a knit structure, and contains fiber reinforcement portions (23, 24, and 25) in predetermined portions of the upper (33) integrally. The fiber reinforcement portions (23, 24, and 25) are formed of a float stitch with a plurality of float stitch yarns (19). The shoe of the present invention imparts a proper fit to a wearer's foot by forming the upper composed of the fabric having the knit structure that stretches properly. Also, in the case where the direction of foot force is suddenly changed while the sole contacts the ground, the shoe can hold the foot in desired predetermined positions by the fiber reinforcement portions situated in predetermined positions of the upper integrally. Thus, the present invention provides a shoe having proper holding properties while maintaining fitting properties.

Abstract: An object detection apparatus that detects an object in a vicinity of a vehicle includes: (a) an image processing circuit configured to: (i) derive vectors representing movement of feature points in captured images acquired periodically by a camera that captures images of the vicinity of the vehicle; and (ii) detect the object based on the vectors; and (b) a controller configured to (i) acquire a velocity of the vehicle; and (ii) set a parameter that affects a number of the feature points based on the velocity of the vehicle.

Abstract: A substrate processing apparatus includes a process chamber configured to process a substrate; a shower head installed at an upstream side of the process chamber; a gas supply pipe connected to the shower head; a first exhaust pipe connected to a downstream side of the process chamber; a second exhaust pipe connected to a second wall surface, which is different from a first wall surface adjacent to the process chamber, in wall surfaces forming the shower head; a pressure detecting part installed in the second exhaust pipe; and a control part configured to control each of the process chamber, the shower head, the gas supply pipe, the first exhaust pipe, the second exhaust pipe, and the pressure detecting part.

Abstract: Cleaning processing of each of the inside of a shower head and the inside of a processing space can be sufficiently or appropriately performed even when gas supply is performed via the shower head. A substrate processing apparatus includes a processing space for processing a substrate, a shower head buffer chamber disposed adjacent to the processing space with a dispersion plate having through-holes therebetween, an inert gas supply system configured to supply an inert gas into the shower head buffer chamber to form a gas curtain in the shower head buffer chamber, a first cleaning gas supply system configured to supply a cleaning gas into the processing space, and a control member configured to control the inert gas supply system and the first cleaning gas supply system to concurrently supply the cleaning gas into the processing space and the inert gas into the shower head buffer chamber.

Abstract: A mechanism includes a shower head; and a process space installed at a downstream side of the shower head. The shower head includes: a lid of the shower head having a through hole formed therein; a first dispersion mechanism having a front end to be inserted into the through hole and the other end connected to a gas supplier; a gas guide including a plate part configured to be widened in a downward direction, and a connecting part installed between the plate part and the lid, the connecting part having at least one hole formed therein; and a second dispersion mechanism installed at a downstream side of the gas guide.

Abstract: Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.

Abstract: Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.

Abstract: A structure for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein includes an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in a region lower than the substrate arrangement region.

Abstract: There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second processing gas plasmatized by a plasma unit to a processing container. The method includes: starting a supply of an electric power to plasmatize the second processing gas to the plasma unit without supplying the second processing gas to the plasma unit; and starting a supply of the second processing gas with the electric power being supplied to the plasma unit.

Abstract: There is provided a substrate processing apparatus that alternately supplies a first processing gas and a second processing gas in plasma state to a processing container and processes a substrate. The apparatus includes a first gas supply system configured to supply the first processing gas, a second gas supply system configured to supply the second processing gas, a plasma unit arranged at an upstream side of the processing container to plasmatize at least the second processing gas, and a controller configured to control the first gas supply system and the second gas supply system to alternately supply the first processing gas and the second processing gas and control the plasma unit to apply an electric power to plasmatize the second processing gas before a supply of the second processing gas starts.

Abstract: Provided are a method of manufacturing semiconductor device, a substrate processing apparatus and a recording medium which are capable of efficiently removing a deposited film in a shower head and suppressing generation of particles. The method of manufacturing a semiconductor device includes (a) forming a film on a substrate by supplying a film forming gas and an inert gas to the substrate in a processing chamber via a shower head, and (b) removing a deposited film deposited in the shower head in (a) by supplying to the shower head an inert gas, which has a temperature lower than that of the inert gas supplied in (a), into the shower head without the substrate loaded in the processing chamber.

Abstract: A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.

Abstract: There is provided a substrate processing apparatus that alternately supplies a first processing gas and a second processing gas in plasma state to a processing container and processes a substrate. The apparatus includes a first gas supply system configured to supply the first processing gas, a second gas supply system configured to supply the second processing gas, a plasma unit arranged at an upstream side of the processing container to plasmatize at least the second processing gas, and a controller configured to control the first gas supply system and the second gas supply system to alternately supply the first processing gas and the second processing gas and control the plasma unit to apply an electric power to plasmatize the second processing gas before a supply of the second processing gas starts.

Abstract: A method of manufacturing a semiconductor device includes processing a substrate accommodated in a process container accommodated in a housing by supplying a process gas onto the substrate; and exhausting the process container using an exhaust system comprising a first exhaust pipe connected to the process container, the first exhaust pipe having circular or oval cross-section perpendicular to an exhausting direction thereof; and a second exhaust pipe connected to the first exhaust pipe, the second exhaust pipe having square or rectangular cross-section perpendicular to the exhausting direction, wherein at least a portion of the second exhaust pipe is disposed within the housing.