Abstract: In a dicing method, a resin adhesive tape is stuck to one surface of a wafer mount frame, then a rubber plate is stuck to the tape from the open side of the frame. With the rubber plate stretched, an adhesive is sprayed over the rubber plate, whereupon a wafer is stuck to the rubber plate. A weight is placed on the rubber plate to extend it further, thus fixing the wafer to the frame. The thus mounted wafer is diced. Alternatively, a resin adhesive tape is stuck to one surface of the frame, then a thick adhesive rubber plate is stuck to the tape from the open side of the frame, whereupon a wafer with hard wax printed using a screen mask is stuck to the rubber plate. The thus mounted wafer is diced by cutting into it deeply. The cut wafer is soaked in a solvent for separation from the rubber plate. As a further alternative, screen mask printing is carried out on a wafer, and wax is coated over the wafer.

Abstract: A method of manufacturing semiconductor elements with metal electrode films formed thereon in which the elements are spread on a metal screen having a mesh size small enough to prohibit the semiconductor elements from passing through it. The metal screen with the semiconductor elements on it is moved cyclically with a periodic motion substantially in a horizontal plane. As a result, burrs extending from the metal electrodes of the semiconductor elements are cut away or bent against the electrode surfaces of the semiconductor elements. The cyclic motion of the screen may be performed by tracing a figure-8 path.

Abstract: A semiconductor dicing method capable of preventing the silver plating from refusing by heat generated during cutting at thick portions without reducing a large production amount. One end of a semiconductor wafer starts to be cut at a blade feeding speed of 16 mm/sec and the speed is gradually increased. The wafer is cut from a predetermined position to another predetermined position at the constant feeding speed of 40 mm/sec. The speed is then gradually decreased and another end of the semiconductor wafer finishes being cut at the feeding speed of 16 mm/sec. That is, at the cutting start, SPEED UP and at the cutting end, SLOW DOWN. Hence, the thick silver plating are slowly cut and the cutting part is cooled with cooling water. Thus, the heat generated by cutting friction can completely be controlled to prevent the silver plating from refusing.