Abstract: A communication system in which a server-side system and a client-side system are communicably connected via a network, the server-side system including: an information reception unit that receives an input information packet including input information and loss chunk numbers from the client-side system; a video processing unit that generates video data; a chunking function unit that chunks the video data and assigns a number to each chunk; a chunk loss determination unit that calculates a chunk loss rate and determines a transmission interval on the basis of a transmission interval determination logic; and a transmission control unit that transmits the chunked video data to the client-side system.

Abstract: An information processing apparatus includes a storage that stores analysis method information indicating an analysis method of brain waves of a user and notification method information indicating a method for notifying a state of brain waves in association with each of a plurality of user states indicating a symptom or ability of the user, a selection part that selects an improvement target state that is a user state that is to be improved by a target user, an acquisition part that acquires brain wave information of the target user, a state identification part that identifies a state of brain waves indicated by the brain wave information according to an analysis method associated with the selected improvement target state, and a notification part that notifies the target user of the state of the brain waves on the basis of the notification method associated with the selected improvement target state.

Abstract: A lighting fixture varies a beam angle of light emitted by a light source and a beam angle of light to the exterior to provide excellent visual effect by indirect lighting, high in serviceability and safety, and applicable to a wide range of purposes. The lighting fixture comprises a lighting fixture body of substantially L-shaped cross-section, a light source constituting a light radiation unit, a first reflector, a second reflector, and an opening constituting an illumination port. The light source is installed at an innermost center region of the vertical lightguide section to face into the vertical lightguide section. The first reflector is installed obliquely near one corner of the vertical lightguide section and the lateral lightguide section. The second reflector is obliquely installed near an endmost corner of the lateral lightguide section to face the first reflector.

Abstract: A lighting fixture varies a beam angle of light emitted by a light source and a beam angle of light to the exterior to provide excellent visual effect by indirect lighting, high in serviceability and safety, and applicable to a wide range of purposes. The lighting fixture comprises a lighting fixture body of substantially L-shaped cross-section, a light source constituting a light radiation unit, a first reflector, a second reflector, and an opening constituting an illumination port. The light source is installed at an innermost center region of the vertical lightguide section to face into the vertical lightguide section. The first reflector is installed obliquely near one corner of the vertical lightguide section and the lateral lightguide section. The second reflector is obliquely installed near an endmost corner of the lateral lightguide section to face the first reflector.

Abstract: A manufacturing apparatus for manufacturing electronic monolithic ceramic components, including a sheet supplier for supplying a plurality of ceramic green sheets of a plurality of types in a predetermined order, and a laminator for laminating the ceramic green sheets supplied by the sheet supplier. A plurality of trays is set in two vertical columns in a rack which is vertically movable. Each tray holds a stack of a plurality of ceramic green sheets of the same type. A particular tray positioned to a predetermined level by the vertical movement of the rack is drawn by a tray drawer device, and one ceramic green sheet is picked up from the tray, and is then conveyed to the laminator. The utilization efficiency of area in the sheet supplier is thus increased.

Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.

Abstract: An ion beam sputtering film deposition apparatus is provided which can form a high-quality thin film that is dense, smooth and faultless. The film deposition apparatus has ion beam irradiating unit, a target 105 containing a film forming substance to be sputtered, and holding unit 112 to hold a substrate 106 on which the sputtered film forming substance is deposited. The ion beam irradiating unit irradiates gas cluster ions to both the target 105 and the substrate 106.

Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.

Abstract: A manufacturing apparatus for manufacturing electronic monolithic ceramic components, including a sheet supplier for supplying a plurality of ceramic green sheets of a plurality of types in a predetermined order, and a laminator for laminating the ceramic green sheets supplied by the sheet supplier. A plurality of trays is set in two vertical columns in a rack which is vertically movable. Each tray holds a stack of a plurality of ceramic green sheets of the same type. A particular tray positioned to a predetermined level by the vertical movement of the rack is drawn by a tray drawer device, and one ceramic green sheet is picked up from the tray, and is then conveyed to the laminator. The utilization efficiency of area in the sheet supplier is thus increased.

Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.

Abstract: A manufacturing apparatus for manufacturing electronic monolithic ceramic components, including a sheet supplier for supplying a plurality of ceramic green sheets of a plurality of types in a predetermined order, and a laminator for laminating the ceramic green sheets supplied by the sheet supplier. A plurality of trays is set in two vertical columns in a rack which is vertically movable. Each tray holds a stack of a plurality of ceramic green sheets of the same type. A particular tray positioned to a predetermined level by the vertical movement of the rack is drawn by a tray drawer device, and one ceramic green sheet is picked up from the tray, and is then conveyed to the laminator. The utilization efficiency of area in the sheet supplier is thus increased.

Abstract: A thin film transistor produced through flattening a gate insulating film acquires the high mobility of a carrier, but has a problem of occasionally showing low resistivity, low withstanding voltage, and consequent low reliability. The present invention solves the above described problem and provides a thin film transistor having the high mobility, the high resistivity, the high withstanding voltage and the high reliability. The present invention also provides a method for producing a thin film transistor having a semiconductor film formed on a gate insulating film thereon, which has the steps of: forming the gate insulating film; and flattening a surface of the gate insulating film by irradiating the surface of the gate insulating film with a gas cluster ion beam.

Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.

Abstract: In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

Abstract: A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.

Abstract: An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

Abstract: A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.

Abstract: A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.

Abstract: Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.

Abstract: A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.