Abstract: A method for manufacturing a solid-state image capturing apparatus including a pixel array constituted of a plurality of pixels, is provided, where each of the plurality of pixels includes a photoelectric conversion section, the method comprising the steps of: forming an impurity diffusion area in a surface area of a semiconductor substrate; and forming a plurality of different impurity diffusion areas in the surface area of the semiconductor substrate, other than the impurity diffusion area constituting the photoelectric conversion section.

Abstract: An exposure operation evaluation method for an exposure apparatus for arranging a predetermined number of at least one evaluation pattern in an overlapping area and printing the at least one evaluation pattern on a substrate when performing a plurality of exposures and printing on the substrate while sequentially step-moving an exposure area in quadrangle, the exposure area having evaluation patterns arranged on an outer peripheral side of a circuit pattern, the overlapping area overlapping respective exposure areas adjacent to four sides of the exposure area, the method including: measuring a printing misalignment between each evaluation pattern of adjacent exposure areas printed on the substrate; and calculating a plurality of linear components in an exposure operation of the exposure apparatus based on the result of the measurement of the printing misalignment and suppressing and controlling the printing misalignment based on the plurality of linear components.

Abstract: A method for manufacturing a solid-state image capturing apparatus including a pixel array constituted of a plurality of pixels, is provided, where each of the plurality of pixels includes a photoelectric conversion section, the method comprising the steps of: forming an impurity diffusion area in a surface area of a semiconductor substrate; and forming a plurality of different impurity diffusion areas in the surface area of the semiconductor substrate, other than the impurity diffusion area constituting the photoelectric conversion section.

Abstract: An alignment mark forming method according to the present invention includes: an alignment mark forming step of using an impurity implantation region as an alignment target layer and using, as a mask, the same resist film used for forming the impurity implantation region to form an alignment mark that is used when a patterning is performed in at least one of a subsequent impurity implantation step and a subsequent process layer forming step.

Abstract: An exposure operation evaluation method for an exposure apparatus for arranging a predetermined number of at least one evaluation pattern in an overlapping area and printing the at least one evaluation pattern on a substrate when performing a plurality of exposures and printing on the substrate while sequentially step-moving an exposure area in quadrangle, the exposure area having evaluation patterns arranged on an outer peripheral side of a circuit pattern, the overlapping area overlapping respective exposure areas adjacent to four sides of the exposure area, the method including: measuring a printing misalignment between each evaluation pattern of adjacent exposure areas printed on the substrate; and calculating a plurality of linear components in an exposure operation of the exposure apparatus based on the result of the measurement of the printing misalignment and suppressing and controlling the printing misalignment based on the plurality of linear components.

Abstract: A photomask for use in manufacturing a semiconductor includes a chrome pattern serving as a mask pattern. The chrome pattern is formed so as to have a size substantially equivalent to a wavelength of an exposure light at an interval substantially equivalent to the wavelength. The chrome pattern includes a band-shaped first chrome pattern and a second chrome pattern having a side in the widthwise direction substantially orthogonal to the side in the lengthwise direction of the first chrome pattern. Then, auxiliary patterns of a size of not more than the wavelength of the exposure light, which have a function of reducing the exposure light or shifting the phase of the exposure light, are formed at both corners of the side of the second chrome pattern so as to partially overlap the second chrome pattern.