Abstract: An acoustic wave device includes a support including a support substrate with a thickness in a first direction, a piezoelectric layer on the support in the first direction, and resonators each including a functional electrode on the piezoelectric layer in the first direction. The support includes first and second space portions at positions where the respective resonators at least partially overlap in plan view in the first direction, the second space portion with an area larger than an area of the first space portion in plan view in the first direction. The piezoelectric layer includes first and second through-holes respectively communicating with the first and second space portions, and the first through-hole has an area larger than an area of the second through-hole in plan view in the first direction.

Abstract: [Object] Provided are a 11C-labeled acyclic retinoid that can be synthesized in a short time with a high yield and can be suitably used for PET for elucidating intracerebral kinetics, a PET probe using it, and methods for producing them. [Solution] The 11C-labeled acyclic retinoid of the present invention is characterized by being represented by the following chemical formula (a). This compound can be produced by a coupling step of cross-coupling a methyl iodide labelled with 11C and the following organotin compound (b) (provided that in the formula, R1 and R2 represent alkyl groups which may have a branch) in an aprotic solvent in the presence of a palladium complex, a phosphine ligand, and a cuprous halide.

Abstract: An acoustic wave device includes a piezoelectric layer including first and second main surfaces opposed to each other, a functional electrode on at least one of the first and second main surfaces, and a support substrate on a second main surface side of the piezoelectric layer. A hollow portion is between the support substrate and the piezoelectric layer. The functional electrode at least partially overlaps the hollow portion when viewed in a laminating direction in which the support substrate and the piezoelectric layer are laminated. A through-hole extends through the piezoelectric layer to the hollow portion. A raised portion extending along a depth direction of the through-hole is on an inner wall of the through-hole.

Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an excitation electrode on the piezoelectric layer. A cavity portion is provided in the support and overlaps at least a portion of the excitation electrode. A portion of the piezoelectric layer that overlaps the cavity portion is a membrane portion. The membrane portion includes first and second directions orthogonal or substantially orthogonal to each other. The membrane portion includes a central portion in the center in the first direction, first and second portions facing each other across the central portion in the first direction, and an outer peripheral edge. At least a portion of the outer peripheral edge of the first and second portions of the membrane portion is located in an outer side portion in the second direction relative to the outer peripheral edge in the central portion.

Abstract: An acoustic wave device includes a support with a thickness in a first direction, a piezoelectric layer in the first direction, and an interdigital transducer electrode in the first direction with first electrode fingers in a second direction, a first busbar electrode connected to the first electrode fingers, second electrode fingers in the second direction and facing corresponding ones of the first electrode fingers in a third direction, and a second busbar electrode connected to the second electrode fingers. The support has a hollow at least partially overlapping the interdigital transducer electrode. The piezoelectric layer has at least one first through hole penetrating the piezoelectric layer between at least one first electrode finger and the second busbar electrode. The first through hole communicates with the hollow, and overlaps an end portion of the at least one first electrode finger that is not connected to the first busbar electrode.

Abstract: An acoustic wave device includes a support with a thickness in a first direction, a piezoelectric layer in the first direction, and an interdigital transducer electrode in the first direction with first electrode fingers in a second direction, a first busbar electrode connected to the first electrode fingers, second electrode fingers in the second direction and facing corresponding ones of the first electrode fingers in a third direction, and a second busbar electrode connected to the second electrode fingers. The support has a hollow adjacent to the piezoelectric layer and at least partially overlapping the interdigital transducer electrode. The piezoelectric layer has a first through hole penetrating the piezoelectric layer between at least one first electrode finger and the second busbar electrode. The first through hole communicates with the hollow, has a length in the third direction, and overlaps a portion of a second electrode finger.

Abstract: An acoustic wave device includes a scandium-containing aluminum nitride film and electrodes on at least one of first and second principal surfaces of the scandium-containing aluminum nitride film. The scandium-containing aluminum nitride film includes areas in which a crystal axis is deviated with respect to remaining portions of the scandium-containing aluminum nitride film.

Abstract: A bulk acoustic wave device includes a scandium-containing aluminum nitride film on a first electrode on a substrate, and a second electrode on the scandium-containing aluminum nitride film, the first electrode and the second electrode overlapping each other with the scandium-containing aluminum nitride film interposed therebetween. In the scandium-containing aluminum nitride film, along a thickness direction, in a first area on a first electrode side, a third area on a second electrode side, and a second area as a center area in the thickness direction between the first area and the third area, an orientation ratio in the first area is lower than an orientation ratio in the second area, or an orientation ratio in the third area is higher than the orientation ratio in the second area.

Abstract: An acoustic wave device is provided that includes a support substrate, a piezoelectric layer on the support substrate, and an interdigital transducer electrode. A ratio d/p is less than or equal to approximately 0.5, where d is a thickness of the piezoelectric layer and p is a distance between centers of adjacent electrode fingers of the multiple electrode fingers. The interdigital transducer electrode includes an intersection region in which the adjacent electrode fingers overlap when viewed in a direction in which multiple electrode fingers face each other. Moreover, two gap regions are located between the intersection region and a corresponding one of the two busbars and includes an I-B gap that is a dimension in a direction in which the multiple electrode fingers extend. The I-B gap of at least one of the two gap regions is less than or equal to about 1.1p.

Abstract: A MEMS device includes a piezoelectric layer made of a piezoelectric single crystal, a first electrode on a first surface of the piezoelectric layer, and a first layer covering the first surface of the piezoelectric layer. At least a portion of the piezoelectric layer is included in a membrane portion. The first electrode is covered with the first layer and includes a recess. The piezoelectric layer includes a through hole that passes through the piezoelectric layer between a surface of the piezoelectric layer, which is opposite to the first direction, and the recess at a position corresponding to at least a portion of the first electrode.

Abstract: An acoustic wave device includes a supporting substrate, an acoustic reflection layer, a piezoelectric layer, and an IDT electrode. At least one of a high acoustic impedance layer and a low acoustic impedance layer is a conductive layer in the acoustic reflection layer. When a wavelength of an acoustic wave determined by an electrode finger pitch of the IDT electrode is ? and a region between an envelope of tips of first electrode fingers and an envelope of tips of second electrode fingers is an intersecting region, the conductive layer overlaps at least the intersecting region in plan view in a thickness direction of the supporting substrate, and a distance from the tips of the first electrode fingers to an end of the conductive layer in a direction in which the first electrode fingers extend is more than 0 and not more than about 12?.

Abstract: A lithographic process for the production of a semiconductor device has recently caused a problem in terms of generation of a sublime component (sublimate) derived from a low-molecular-weight compound (e.g., polymer resin, crosslinking agent, or crosslinking catalyst) during baking upon formation of a resist underlayer film from a resist underlayer film-forming composition. The resist underlayer film-forming composition of the present invention uses an organic acid having a fluoroalkyl group or an organic acid salt having a fluoroalkyl group, as a crosslinking catalyst, and thus the resist underlayer film-forming composition containing the crosslinking catalyst can effectively prevent generation of a sublimate derived from a low-molecular-weight component contained in the resist underlayer film during formation of the film.

Abstract: An acoustic wave device is provided that includes a cavity in a substrate, an overlapping region in which portions of adjacent first and second interdigitated electrodes oppose each other, a first gap region between a first busbar and the overlapping region and that includes the first interdigitated electrodes but not the second interdigitated electrodes, and a second gap region between a second busbar and the overlapping region and that includes the second interdigitated electrodes but not the first interdigitated electrodes. A ratio d/p is about 0.5 or less, where d is a thickness of the piezoelectric layer and p is a distance between centers of adjacent first and second interdigitated electrodes. A first wall of the cavity is located under the first busbar or the first gap region, and a second wall of the cavity is located under the second busbar or the second gap region.

Abstract: An acoustic wave device includes a support, a piezoelectric layer, an IDT electrode including first and second busbars and first and second electrode fingers, and a dielectric film provided on the piezoelectric layer so as to overlap at least a portion of the IDT electrode in plan view. When a thickness of the piezoelectric layer is d and a center-to-center distance between centers of adjacent ones of the electrode fingers is p, d/p is less than or equal to about 0.5. A cavity that opens on a side of the piezoelectric layer is provided in the support. The IDT electrode includes an intersection region, and first and second gap regions. The dielectric film is provided at at least a portion of the first and second gap regions, and a thermal conductivity of the dielectric film is higher than a thermal conductivity of the piezoelectric layer.

Abstract: A production efficiency improvement support system calculates a cycle time erc. based on results of detecting an operating status of production equipment, and displays a chart showing a time series variation of the cycle time etc. The cycle time is displayed such that a variation of the cycle time is visually recognizable. The chart displays information regarding a production volume that is the most important variable in production management on a first row and a second row from the top, and displays information regarding the operating status of the production equipment related to the production volume on bottom two rows (a fourth row and a fifth row). The chart also displays the operating status of the production equipment between these pieces of information. Displaying these indexes in the form of a chart facilitates visual recognition of how to improve the cycle time and effectively supports improvement of the production efficiency.

Abstract: A piezoelectric device includes a membrane portion and a piezoelectric layer made of single crystal of a piezoelectric body. At least a portion of the piezoelectric layer is included in the membrane portion. An electrode is provided on a surface of the piezoelectric layer in the membrane portion. The piezoelectric layer includes a first polarization region in a first polarization state and a second polarization region in a second polarization state, and the first polarization region and the second polarization region are spaced apart from each other in a thickness direction or an in-plane direction.

Abstract: An elastic wave device includes a supporting substrate, an acoustic multilayer film on the supporting substrate, a piezoelectric substrate on the acoustic multilayer film, and an IDT electrode on the piezoelectric substrate. An absolute value of a thermal expansion coefficient of the piezoelectric substrate is larger than an absolute value of a thermal expansion coefficient of the supporting substrate. The acoustic multilayer film includes at least four acoustic impedance layers. The elastic wave device further includes a bonding layer provided at any position in a range of from inside the first acoustic impedance layer from the piezoelectric substrate side towards the supporting substrate side, to an interface between the third acoustic impedance layer and the fourth acoustic impedance layer.

Abstract: A filter device includes first and second acoustic wave resonators each including a support, a piezoelectric layer that has an X-axis, a Y-axis, and a Z-axis that are crystal axes and is made of Y-cut lithium niobate, and an IDT electrode including first and second electrode fingers. When a thickness of the piezoelectric layer is d and a center-to-center distance of the first and second electrode fingers and the second electrode fingers adjacent to each other is p, d/p is less than or equal to 0.5. An absolute value of a first slant angle ?1 differs from an absolute value of a second slant angle ?2.

Abstract: A MEMS device includes a membrane portion, a piezoelectric layer made of a piezoelectric single crystal, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite to the first direction, and a first layer covering the first surface of the piezoelectric layer. At least a portion of the piezoelectric layer is included in the membrane portion. Each of the first electrode and the second electrode has a tapered cross-sectional shape with a width which decreases with increasing distance from the piezoelectric layer on a cross section along a plane vertical to the surface in the first direction.

Abstract: An acoustic wave device includes a support substrate having a thickness in a first direction, a piezoelectric layer on the support substrate, an interdigital transducer electrode on the piezoelectric layer and including first and second electrode fingers, the first electrode fingers extending in a second direction crossing the first direction, the second electrode fingers extending in the second direction and facing the first electrode fingers in a third direction orthogonal or substantially orthogonal to the second direction, and a reinforcing film on the piezoelectric layer. The support substrate and the piezoelectric layer include a hollow therebetween at a position overlapping the interdigital transducer electrode in the first direction. At least one through hole penetrates the piezoelectric layer at a position not overlapping the interdigital transducer electrode in the first direction, and the through hole communicates with the hollow. The reinforcing film overlaps the hollow in the first direction.