Patents by Inventor Tetsuya Kishida

Tetsuya Kishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate
    Patent number: 11066756
    Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: July 20, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shin Harada, Tsutomu Hori, Sho Sasaki, Tetsuya Kishida
  • CRYSTAL GROWTH APPARATUS, METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND SILICON CARBIDE EPITAXIAL SUBSTRATE
    Publication number: 20200063286
    Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.
    Type: Application
    Filed: October 29, 2019
    Publication date: February 27, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Shin HARADA, Tsutomu HORI, Sho SASAKI, Tetsuya KISHIDA
  • Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate
    Patent number: 10494735
    Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: December 3, 2019
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Shin Harada, Tsutomu Hori, Sho Sasaki, Tetsuya Kishida
  • CRYSTAL GROWTH APPARATUS, METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND SILICON CARBIDE EPITAXIAL SUBSTRATE
    Publication number: 20170335486
    Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.
    Type: Application
    Filed: December 17, 2015
    Publication date: November 23, 2017
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Shin HARADA, Tsutomu HORI, Sho SASAKI, Tetsuya KISHIDA
  • Head-mounted display device
    Patent number: 6771424
    Abstract: The present invention is a head-mounted display device comprising a head holding holder that is proximate at least to the two sides of the head and to the front of the head, and a display unit that is deployed on that holder, at a position over either the left or right eye at the front of the head.
    Type: Grant
    Filed: August 15, 2000
    Date of Patent: August 3, 2004
    Assignee: Shimadzu Corporation
    Inventors: Hisashi Amafuji, Keizo Kumai, Tetsuya Kishida, Yoshio Kakuta