Abstract: To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type AlxGa1-xN layer (0?x<1) on the buffer side, and an AlzGa1-zN adjustment layer containing p-type impurity, which has an approximately equal Al composition to the first AlxGa1-xN layer (x?0.05?z?x+0.05, 0?z<1) is provided between the buffer and the functional laminate.

Abstract: A solar panel unit is provided. The solar panel unit includes at least one solar panel, at least one support member configured to support the solar panel through at least on rotation shaft, and an actuator unit including at least one air bag capable of extending and contracting according to an internal pressure, and configured to rotate the solar panel around an axis of the rotation shaft according to extension and contraction of the air bag.

Abstract: The present invention provides a preparation with improved disintegration property, a preparation showing improved bioavailability of a medicament, production methods thereof and the like. A rapidly disintegrating preparation comprising granules comprising a medicament coated with a coating layer containing sugar or sugar alcohol; and a disintegrant. A production method of a rapidly disintegrating preparation including a step of producing granules comprising a medicament, a step of forming a coating layer containing sugar or sugar alcohol on the obtained granules and a step of mixing the coated granules with a disintegrant and molding the mixture.

Abstract: The present invention provides a preparation with improved disintegration property, a preparation showing improved bioavailability of a medicament, production methods thereof and the like. A rapidly disintegrating preparation comprising granules comprising a medicament coated with a coating layer containing sugar or sugar alcohol; and a disintegrant. A production method of a rapidly disintegrating preparation including a step of producing granules comprising a medicament, a step of forming a coating layer containing sugar or sugar alcohol on the obtained granules and a step of mixing the coated granules with a disintegrant and molding the mixture.

Abstract: To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type AlxGa1-xN layer (0?x<1) on the buffer side, and an AlzGa1-zN adjustment layer containing p-type impurity, which has an approximately equal Al composition to the first AlxGa1-xN layer (x?0.05?z?x+0.05, 0?z<1) is provided between the buffer and the functional laminate.

Abstract: The present invention provides a preparation with improved disintegration property, a preparation showing improved bioavailability of a medicament, production methods thereof and the like. A rapidly disintegrating preparation comprising granules comprising a medicament coated with a coating layer containing sugar or sugar alcohol; and a disintegrant. A production method of a rapidly disintegrating preparation including a step of producing granules comprising a medicament, a step of forming a coating layer containing sugar or sugar alcohol on the obtained granules and a step of mixing the coated granules with a disintegrant and molding the mixture.

Abstract: The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B1 (0<B1) and supplying the gas containing magnesium at a flow rate C1 (0<C1) while supplying the Group III source gas at a flow rate A1 (0?A1); and a second step of supplying a Group V source gas at a flow rate B2 (0<B2) and supplying a gas containing magnesium at a flow rate C2 (0<C2) while supplying a Group III source gas at a flow rate A2 (0<A2). The first step and the second step are repeated a plurality of times to form a p-AlxGa1-xN (0?x<1) layer, and the flow rate A1 is a flow rate which allows no p-AlxGa1-xN layer to grow and satisfies A1?0.5A2.

Abstract: A light-emitting element comprising a substrate; a light-emitting layer disposed above the substrate and emitting a primary light; and, a reflective film disposed between the substrate and the light-emitting layer and formed by at least one layer that reflects the primary light, in which the light-emitting element further comprises a light dispersing multilayered film disposed between the substrate and the reflective film and formed by two or more types of light dispersing layers, and the light dispersing multilayered film multiple-disperses a secondary light into plural wavelengths and discharges the secondary light, which is excited by the primary light passing through the reflective film.

Abstract: The present invention provides a preparation with improved disintegration property, a preparation showing improved bioavailability of a medicament, production methods thereof and the like. A rapidly disintegrating preparation comprising granules comprising a medicament coated with a coating layer containing sugar or sugar alcohol; and a disintegrant. A production method of a rapidly disintegrating preparation including a step of producing granules comprising a medicament, a step of forming a coating layer containing sugar or sugar alcohol on the obtained granules and a step of mixing the coated granules with a disintegrant and molding the mixture.

Abstract: A nitride semiconductor device is provided, in which a superlattice strain buffer layer using AlGaN layers having a low Al content or GaN layers is formed with good flatness, and a nitride semiconductor layer with good flatness and crystallinity is formed on the superlattice strain buffer layer. A nitride semiconductor device includes a substrate; an AlN strain buffer layer made of AlN formed on the substrate; a superlattice strain buffer layer formed on the AlN strain buffer layer; and a nitride semiconductor layer formed on the superlattice strain buffer layer, and is characterized in that the superlattice strain buffer layer has a superlattice structure formed by alternately stacking first layers made of AlxGa1?xN (0?x?0.25), which further contain p-type impurity, and second layers made of AlN.

Abstract: A light-emitting element comprising a substrate; a light-emitting layer disposed above the substrate and emitting a primary light; and, a reflective film disposed between the substrate and the light-emitting layer and formed by at least one layer that reflects the primary light, in which the light-emitting element further comprises a light dispersing multilayered film disposed between the substrate and the reflective film and formed by two or more types of light dispersing layers, and the light dispersing multilayered film multiple-disperses a secondary light into plural wavelengths and discharges the secondary light, which is excited by the primary light passing through the reflective film.

Abstract: A head-side inflow/outflow unit (60) and a foot-side inflow/outflow unit (70), which have a respective outlet opening (61, 71) for providing a supply of conditioned air to a sleeping compartment (11) within a capsule main body (20) and a respective inlet opening (62, 72), associated with the outlet opening (61, 71), for drawing in internal air of the sleeping compartment (11), are provided. The air-conditioning capacity of conditioned air supplied through each of the outlet openings (61, 71) is controlled such that the temperature of conditioned air supplied through the outlet opening (61) of the head-side inflow/outflow unit (60) falls below the temperature of conditioned air supplied through the outlet opening (71) of the foot-side inflow/outflow unit (70).

Abstract: A head-side inflow/outflow unit (60) and a foot-side inflow/outflow unit (70), which have a respective outlet opening (61, 71) for providing a supply of conditioned air to a sleeping compartment (11) within a capsule main body (20) and a respective inlet opening (62, 72), associated with the outlet opening (61, 71), for drawing in internal air of the sleeping compartment (11), are provided. The air-conditioning capacity of conditioned air supplied through each of the outlet openings (61, 71) is controlled such that the temperature of conditioned air supplied through the outlet opening (61) of the head-side inflow/outflow unit (60) falls below the temperature of conditioned air supplied through the outlet opening (71) of the foot-side inflow/outflow unit (70).

Abstract: Flux is supplied to the surface of each land by a flux supplying apparatus. A solder ball having a predetermined size is supplied onto a land by using a ball supplying apparatus. A memory IC is disposed on a logic IC and each of a plurality of external leads comes into contact with a predetermined position in each of a plurality of corresponding lands. By performing predetermined heat treatment, the solder ball is melted to bond each external lead and each land with each other. After that, the melted solder is cooled down, the bonded portion is formed, and a stacked semiconductor device in which the memory IC is stacked on the logic IC is completed. In such a manner, a stacked semiconductor device in which external leads of a semiconductor device body are bonded to electrodes on a substrate securely is obtained.

Abstract: A semiconductor module includes a substrate having a pad electrode on a surface, a lower layer semiconductor package mounted on the substrate, and an upper layer semiconductor package mounted on the substrate while arranged in a position substantially overlying the former. The pad electrodes connected to the leads of these semiconductor packages are arranged alternately. The lead has a dambar residual portion. An inner surface of a lead downward portion of the upper layer semiconductor package is positioned outside an outer surface of a lead downward portion of the lower layer semiconductor package.

Abstract: Flux is supplied to the surface of each land by a flux supplying apparatus. A solder ball having a predetermined size is supplied onto a land by using a ball supplying apparatus. A memory IC is disposed on a logic IC and each of a plurality of external leads comes into contact with a predetermined position in each of a plurality of corresponding lands. By performing predetermined heat treatment, the solder ball is melted to bond each external lead and each land with each other. After that, the melted solder is cooled down, the bonded portion is formed, and a stacked semiconductor device in which the memory IC is stacked on the logic IC is completed. In such a manner, a stacked semiconductor device in which external leads of a semiconductor device body are bonded to electrodes on a substrate securely is obtained.

Abstract: In a semiconductor device, a first semiconductor including a substrate, and a semiconductor chip disposed on the major surface of the substrate and sealed with a resin; a wiring board; spacers disposed between the wiring board and the substrate; and a second semiconductor. At this time, the second semiconductor is electrically connected to the wiring board and disposed in the space formed by the wiring board, the substrate, and the spacer. The spacer is disposed so as to the first semiconductor to the wiring board electrically.

Abstract: A stacked semiconductor device structure comprising: a plurality of semiconductor modules each of which includes a substrate and at least one semiconductor device mounted on the substrate; a stacking device for stacking the semiconductor modules on one another; and a surface mount device for surface mounting on a further substrate for a system appliance the semiconductor modules stacked on one another by the stacking device.

Abstract: A plurality of substrates are stacked on top of each other. A flexible cable serially connects the substrates. Semiconductor packages are mounted on the surfaces of the substrates. An adhesive material bonds adjoining semiconductor packages and holds the semiconductor packages in place with respect to each other. The bottommost substrate is provided with external leads by which the semiconductor module is mounted on the motherboard.

Abstract: A semiconductor module achieving higher density of the semiconductor module itself as well as of being disposed in an area-efficient manner relative to another electronic component, such as a mother board and the like. The semiconductor module includes a mounting substrate having, on an underside, a solder ball for connecting to an interconnection of a mother board and semiconductor packages mounted in multiple layers on the top side of the mounting substrate and connected to electrodes on the mounting substrate.