Patents by Inventor Tetsuya Mizuguchi
Tetsuya Mizuguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240114701Abstract: Provided is a nonvolatile memory device that makes it possible to achieve high performance. The nonvolatile memory device includes a first electrode, a memory material layer, a second electrode, and a first buffer layer. The memory material layer includes a first element and is provided on the first electrode. The second electrode is provided on the memory material layer. The first buffer layer is provided between the memory material layer and the second electrode. In the first buffer layer, a segregation of the first element is smaller than a segregation of the first element in the second electrode.Type: ApplicationFiled: December 7, 2021Publication date: April 4, 2024Inventors: JUN SUMINO, KATSUHISA ARATANI, TAKEYUKI SONE, TETSUYA MIZUGUCHI
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Publication number: 20220293855Abstract: A storage device of an embodiment of the present disclosure includes: a first electrode; a second electrode; a storage layer provided between the first electrode and the second electrode and including at least copper, aluminum, zirconium, and tellurium; and a barrier layer provided between the storage layer and the second electrode and including zirconium at a higher concentration than at least the storage layer, the barrier layer having a copper concentration, at an interface with the second electrode, being lower than the storage layer.Type: ApplicationFiled: August 13, 2020Publication date: September 15, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tetsuya MIZUGUCHI, Katsuhisa ARATANI
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Publication number: 20220134049Abstract: To provide a user with a new sensation through a tactile sensation, an auditory sensation, and a visual sensation, a human body support device has an overall shape that can easily be used as a chair or a couch. The human body support device includes a frame that is formed from, for example, metal or resin, and a plurality of modules that are arranged in a plurality of sites to support the user body on the frame. These modules include a sound emitting module that is provided with a speaker, and a vibrating and light-emitting module that is provided with an LED and a voice coil motor. These modules have an elastic part that is formed by an elastic material such as a sponge in a location that is in contact with the user body. The orientation and position of the modules are designed so as to be in proper contact with and support the user body, and accordingly, the user body can be comfortably supported.Type: ApplicationFiled: February 21, 2020Publication date: May 5, 2022Applicants: Japan Tobacco Inc., ENHANCE EXPERIENCE INC., Flowplateaux Co., Ltd.Inventors: Sayako SAKUMA, Tetsuya MIZUGUCHI, Ayahiko SATO
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Patent number: 9577187Abstract: The present invention provides a memory element and a memory device realizing reduced variations in resistance values in an initial state or erase state of a plurality of memory elements and capable of retaining the resistance value in a write/erase state for writing/erasing operations of a plurality of times. The memory element includes a first electrode, a memory layer, and a second electrode in order. The memory layer has: an ion source layer containing at least one of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and at least one metal element selected from copper (Cu), silver (Ag), zinc (Zn), and zirconium (Zr); and two or more high-resistance layers having a resistance value higher than that of the ion source layer and having different compositions.Type: GrantFiled: July 24, 2015Date of Patent: February 21, 2017Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Akihiro Maesaka, Kazuhiro Ohba, Tetsuya Mizuguchi, Koji Miyata, Motonari Honda, Katsuhisa Aratani
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Patent number: 9543514Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.Type: GrantFiled: November 24, 2015Date of Patent: January 10, 2017Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
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Patent number: 9489938Abstract: A sound synthesis apparatus connected to a display device, includes a processor configured to: display a lyric on a screen of the display device; input a pitch based on an operation of a user, after the lyric has been displayed on the screen; and output a piece of waveform data representing a singing sound of the displayed lyric based on the inputted pitch.Type: GrantFiled: June 21, 2013Date of Patent: November 8, 2016Assignee: Yamaha CorporationInventors: Tetsuya Mizuguchi, Kiyohisa Sugii
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Method of making memory element with ion source layer comprised of two or more unit IO source layers
Patent number: 9356232Abstract: A method of making memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer.Type: GrantFiled: November 13, 2014Date of Patent: May 31, 2016Assignee: SONY CORPORATIONInventors: Kazuhiro Ohba, Tetsuya Mizuguchi, Shuichiro Yasuda, Masayuki Shimuta, Katsuhisa Aratani -
Publication number: 20160079528Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.Type: ApplicationFiled: November 24, 2015Publication date: March 17, 2016Inventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
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Patent number: 9240549Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.Type: GrantFiled: March 7, 2014Date of Patent: January 19, 2016Assignee: SONY CORPORATIONInventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
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Patent number: 9231200Abstract: A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer.Type: GrantFiled: September 4, 2014Date of Patent: January 5, 2016Assignee: SONY CORPORATIONInventors: Tetsuya Mizuguchi, Shuichiro Yasuda, Masayuki Shimuta, Kazuhiro Ohba, Katsuhisa Aratani
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Patent number: 9202560Abstract: There are provided a memory element and a memory device excellently operating at a low current, and having the satisfactory retention characteristics. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and being in a single- or multi-layer structure including a layer containing a highest percentage of tellurium (Te) as an anionic component, and an ion source layer disposed on the second electrode side, and containing a metallic element and one or more chalcogen elements including tellurium (Te), sulfur (S), and selenium (Se) with aluminum (Al) of 27.7 atomic % or more but 47.4 atomic % or less.Type: GrantFiled: February 23, 2012Date of Patent: December 1, 2015Assignee: SONY CORPORATIONInventors: Tetsuya Mizuguchi, Kazuhiro Ohba, Shuichiro Yasuda, Masayuki Shimuta, Akira Kouchiyama, Hiroaki Sei
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Publication number: 20150333256Abstract: The present invention provides a memory element and a memory device realizing reduced variations in resistance values in an initial state or erase state of a plurality of memory elements and capable of retaining the resistance value in a write/erase state for writing/erasing operations of a plurality of times. The memory element includes a first electrode, a memory layer, and a second electrode in order. The memory layer has: an ion source layer containing at least one of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and at least one metal element selected from copper (Cu), silver (Ag), zinc (Zn), and zirconium (Zr); and two or more high-resistance layers having a resistance value higher than that of the ion source layer and having different compositions.Type: ApplicationFiled: July 24, 2015Publication date: November 19, 2015Inventors: Akihiro Maesaka, Kazuhiro Ohba, Tetsuya Mizuguchi, Koji Miyata, Motonari Honda, Katsuhisa Aratani
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Patent number: 9136470Abstract: The present invention provides a memory element and a memory device realizing reduced variations in resistance values in an initial state or erase state of a plurality of memory elements and capable of retaining the resistance value in a write/erase state for writing/erasing operations of a plurality of times. The memory element includes a first electrode, a memory layer, and a second electrode in order. The memory layer has: an ion source layer containing at least one of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and at least one metal element selected from copper (Cu), silver (Ag), zinc (Zn), and zirconium (Zr); and two or more high-resistance layers having a resistance value higher than that of the ion source layer and having different compositions.Type: GrantFiled: December 1, 2010Date of Patent: September 15, 2015Assignee: SONY CORPORATIONInventors: Akihiro Maesaka, Kazuhiro Ohba, Tetsuya Mizuguchi, Koji Miyata, Motonari Honda, Katsuhisa Aratani
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Patent number: 9112149Abstract: A memory element with reduced degradation of memory characteristics that is caused by deterioration of a memory layer, a method of manufacturing the memory element, and a memory device are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing fluoride, and an ion source layer disposed between the resistance change layer and the second electrode.Type: GrantFiled: December 5, 2011Date of Patent: August 18, 2015Assignee: SONY CORPORATIONInventors: Hiroaki Sei, Shuichiro Yasuda, Masayuki Shimuta, Katsuhisa Aratani, Akira Kouchiyama, Tetsuya Mizuguchi, Kazuhiro Ohba
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Patent number: 9058873Abstract: A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side.Type: GrantFiled: June 20, 2012Date of Patent: June 16, 2015Assignee: SONY CORPORATIONInventors: Masayuki Shimuta, Shuichiro Yasuda, Tetsuya Mizuguchi, Kazuhiro Ohba, Katsuhisa Aratani
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Publication number: 20150072499Abstract: A method of making memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer.Type: ApplicationFiled: November 13, 2014Publication date: March 12, 2015Inventors: Kazuhiro Ohba, Tetsuya Mizuguchi, Shuichiro Yasuda, Masayuki Shimuta, Katsuhisa Aratani
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Publication number: 20140376301Abstract: A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer.Type: ApplicationFiled: September 4, 2014Publication date: December 25, 2014Inventors: Tetsuya Mizuguchi, Shuichiro Yasuda, Masayuki Shimuta, Kazuhiro Ohba, Katsuhisa Aratani
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Patent number: 8912516Abstract: A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer.Type: GrantFiled: June 20, 2012Date of Patent: December 16, 2014Assignee: Sony CorporationInventors: Kazuhiro Ohba, Tetsuya Mizuguchi, Shuichiro Yasuda, Masayuki Shimuta, Katsuhisa Aratani
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Patent number: 8885385Abstract: A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer.Type: GrantFiled: June 2, 2012Date of Patent: November 11, 2014Assignee: Sony CorporationInventors: Tetsuya Mizuguchi, Shuichiro Yasuda, Masayuki Shimuta, Kazuhiro Ohba, Katsuhisa Aratani
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Patent number: 8873281Abstract: A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30?Te?100 atomic %, 0?Al?70 atomic %, and 0?Cu+Zr?36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se.Type: GrantFiled: September 9, 2013Date of Patent: October 28, 2014Assignee: Sony CorporationInventors: Tetsuya Mizuguchi, Shuichiro Yasuda, Satoshi Sasaki, Naomi Yamada