Patents by Inventor Tetsuya Ogushi

Tetsuya Ogushi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5183799
    Abstract: Oxide materials of (L.sub.x A.sub.1-x).sub.i MO.sub.y, (L.sub.x A.sub.1-x).sub.i M.sub.1-z Cu.sub.z O.sub.y and (L.sub.x A.sub.1-x).sub.i MO.sub.j-.delta. G.sub.k, wherein L is Sc, Y, lanthanides, etc.; A is Ba, Sr. Ca, etc.; M is V, Nb, Ta, T, Zr or Hf; 0<x<1; 0<z<1; i=1, 3/2 or 2; 0<y.ltoreq.4; Gis F, Cl or N; .delta. is oxygen defect, and having a perovskite-like crystal structure, show superconductivity at a temperature higher than the liquid nitrogen temperature.
    Type: Grant
    Filed: July 10, 1991
    Date of Patent: February 2, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Tetsuya Ogushi, Yoshinori Hakuraku, Hisanao Ogata
  • Patent number: 5106820
    Abstract: Disclosed is an oxide superconductor, wherein at least the surface layer has a chemical composition represented by the following formula:La.sub.x Sr.sub.y NbO.sub.zwherein0<x<1,0<y<1, and1<z<4,and has a critical temperature (Tc) higher than 100.degree. K.This superconducotr has a high critical temperature and is rendered superconducting by cooling with cheap liquefied nitrogen.This superconductor is prepared by a process comprising carrying out sputtering in an argon atmosphere by using one of NB and an La--Sr--Cu--O oxide as the substrate and the other as the target under such a temperature condition that substitution of Cu by Nb is caused, an quencing the formed film.
    Type: Grant
    Filed: September 13, 1988
    Date of Patent: April 21, 1992
    Assignee: Kyocera Corporation
    Inventors: Tetsuya Ogushi, Gentaro Kaji, Saburo Nagano
  • Patent number: 4956337
    Abstract: A superconductive material with a superconducting critical temperature of at least 77.degree. K. comprising 20 at. % Nb, 10 at. % Si, 10 at. % Al and 60 at. % O is provided by simultaneous vapor-phase physical deposition or sputtering of Nb, Si and Al onto a heated sapphire substrate under oxygen-containing atmosphere, followed by a rapid quenching or post-oxidization of Nb-Si-Al ternary system composition having an Nb/Si/Al atomic ratio of 2/1/1. The high critical temperature allows abundantly existing, cheap available liquid nitrogen to be used as a cryogen for developing superconductivity.
    Type: Grant
    Filed: June 16, 1989
    Date of Patent: September 11, 1990
    Assignee: Kagoshima University
    Inventor: Tetsuya Ogushi
  • Patent number: 4892862
    Abstract: Oxide materials having the formulae (L.sub.x A.sub.1-x).sub.i MO.sub.y, (L.sub.x A.sub.1-x).sub.i -M.sub.1-z Cu.sub.z O.sub.y and (L.sub.x A.sub.1-x).sub.i MO.sub.j-.delta. G.sub.k, wherein L is Sc, Y, lanthanides, etc.; A is Ba, Sr, Ca, etc.; M is V, Nb, Ta, Ti, Zr or Hf; 0<x<1; 0<z<1; i=1, 3/2 or 2; 0<y.ltoreq.4; G is F, Cl or N; .delta. is oxygen defect, and having a perovskite-like crystal structure, show superconductivity at a temperature higher than the liquid nitrogen temperature these oxide materials can be produced by a substitution diffusion reaction between a substrate and a film or layer deposited on the substrate.
    Type: Grant
    Filed: April 13, 1988
    Date of Patent: January 9, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Tetsuya Ogushi, Yoshinori Hakuraku, Hisanao Ogata