Abstract: An adhesive for separatably attaching a support to a circuit side of a wafer to process a rear surface of the wafer, the adhesive including a component (A) that is cured by a hydrosilylation reaction and a component (B) containing a phenyl group-containing polyorganosiloxane, wherein a ratio in % by mass of the component (A) to the component (B) is 95:5 to 30:70. A separation method including applying the adhesive onto a first body to form an adhesion layer, attaching a second body to the adhesion layer, heating the adhesion layer from a side of the first body to cure the adhesive to form a layered body, processing the layered body, and carrying out separation between the adhesion layer, and the first and second bodies. The processing may be polishing the rear surface of the wafer.

Abstract: The invention provides a cleaning agent composition for use in removal of, for example, a polysiloxane adhesive. The composition contains a quaternary ammonium salt, an etching rate enhancer formed of an amphoteric surfactant, and an organic solvent.

Abstract: A cleaning agent composition for use in removal of a polysiloxane adhesive remaining on a substrate, the composition containing a tetrahydrocarbylammonium fluoride and an organic solvent, wherein the organic solvent contains an alkylene glycol dialkyl ether and a lactam compound represented by formula (1). (in formula (1), R101 represents a C1 to C6 alkyl group, and R102 represents a C1 to C6 alkylene group.

Abstract: A cleaning agent composition for use in removal of an adhesive residue, the composition containing a quaternary ammonium salt and a solvent, wherein the solvent consists of an organic solvent, and the organic solvent includes an N,N,N?,N?-tetra(hydrocarbyl)urea.

Abstract: A cleaning agent composition for use in removal of a polysiloxane adhesive remaining on a substrate containing a tetrahydrocarbylammonium fluoride and an organic solvent, wherein the organic solvent contains a lactam compound represented by formula (1) and a ring-structure-having ether compound including at least one species selected from among a cyclic ether compound, a cycloalkyl (chain alkyl) ether compound, a cycloalkyl (branched alkyl) ether compound, and a di(cycloalkyl) ether compound. (in formula (1), R101 represents a C1 to C6 alkyl group; and R102 represents a C1 to C6 alkylene group.

Abstract: An adhesive composition for use in debonding with light irradiation, which composition can achieve debonding through irradiation with light, wherein the adhesive composition contains an adhesive component and carbon black, and the adhesive component contains a component (A) which is cured through hydrosilylation.

Abstract: An adhesive composition for forming an adhesive layer that can bond a first substrate formed of a semiconductor-forming substrate to a second substrate formed of a support substrate in a peelable manner, the composition containing a component (A) which is cured through hydrosilylation and a peeling component (B) which contains a component containing an epoxy-modified polyorganosiloxane, wherein the component (A) contains a polysiloxane (A1) including a siloxane unit represented by SiO2 (unit Q) and the like, and a platinum group metal catalyst (A2); and the polysiloxane (A1) contains a polyorganosiloxane (a1) including a siloxane unit represented by SiO2 (unit Q?) and the like, and a polyorganosiloxane (a2) including a siloxane unit represented by SiO2 (unit Q?) and the like, and having a functional group (Si—H) content of 5.0 mol/kg or greater.

Abstract: A cleaning agent composition for use in removal of a polysiloxane adhesive remaining on a substrate, the composition containing a tetrahydrocarbylammonium fluoride and an organic solvent, wherein the organic solvent contains an aromatic compound represented by formula (1) and a lactam compound represented by formula (2). (in formulas (1) and (2), s represents the number of substituents R100s of the benzene ring and is 2 or 3; s groups of R100s each independently represent a C1 to C6 alkyl group; the total number of carbon atoms in s groups of C1 to C6 alkyl groups is 3 or greater; R101 represents a C1 to C6 alkyl group; and R102 represents a C1 to C6 alkylene group.

Abstract: An adhesive composition for use in debonding with light irradiation, which composition can achieve debonding through irradiation with light, characterized in that the adhesive composition contains an adhesive component (S) and a light-absorbing organic compound (X); and the light-absorbing organic compound (X) contains, in the molecule thereof, one or more aromatic rings, one or more rings each containing a heteroatom forming the ring, and one or more groups selected from among a carbonyl group and a thiocarbonyl group.

Abstract: An adhesive composition for use in debonding with infrared radiation, which composition can achieve debonding through irradiation with an infrared ray, the composition including a component (A) which is cured through hydrosilylation and a component (B) which is at least one species selected from the group consisting of a component containing an epoxy-modified polyorganosiloxane, a component containing a methyl group-containing polyorganosiloxane, and a component containing a phenyl group-containing polyorganosiloxane.

Abstract: A laminate debonding method includes producing a laminate by joining a first substrate formed of a semiconductor-forming substrate to a second substrate formed of a support substrate which allows passage of infrared laser light, by the mediation of a first adhesive layer provided on the first substrate and a second adhesive layer provided on the second substrate, wherein the first adhesive layer is obtained by curing an adhesive (A) containing a component which is cured through hydrosilylation, and the second adhesive layer is obtained by use of an adhesive (B) formed of a polymer adhesive having an aromatic ring in at least one of a main chain and a side chain and which allows passage of infrared laser light; and irradiating the laminate with infrared laser light from a second substrate side for debonding the second substrate at the interface between the first and second adhesive layers.

Abstract: An adhesive can be easily peeled off after polishing the back face of a wafer, which has heat resistance and can be easily washed off. An adhesive for peelably adhering between a support and a circuit-bearing face of a wafer and thereby processing a back face of the wafer, a peeling face upon peeling becomes selectable according to heating from the support side or wafer side when the adhesive is cured. The adhesive includes a component (A) curing by hydrosilylation reaction and a component (B) containing a polydimethylsiloxane. A peeling method including forming an adhesion layer by applying the adhesive to a surface of a first substrate, bonding a surface of a second substrate to the adhesion layer, curing the adhesion layer by heating from the first substrate side to form a laminate, processing the laminate, and peeling off between the first substrate and the adhesion layer.

Abstract: A temporary adhesive without the formation of voids between a support and a wafer. A temporary adhesive for separatably attaching a support to a circuit side of a wafer to process a rear surface of the wafer, the temporary adhesive including a component (A) that is cured by a hydrosilylation reaction; a polymerization inhibitor (B) having a 5% mass decrease temperature of 80° C. or higher as measured using a Tg-DTA; and a solvent (C). The component (A) may include a polysiloxane (A1) including a polyorganosiloxane (a1) containing a C1-10 alkyl group and a C2-10 alkenyl group, and a polyorganosiloxane (a2) containing a C1-10 alkyl group and a hydrogen atom; and a platinum group metal-based catalyst (A2). The polymerization inhibitor (B) may be a compound of formula (1): (wherein R7 and R8 are each a C6-40 aryl group, or a combination of a C1-10 alkyl group and a C6-40 aryl group).

Abstract: A resist underlayer film-forming composition includes a resin; and a crosslinkable compound of Formula (1) or Formula (2): wherein the crosslinkable compound of Formula (1) or Formula (2) is a compound obtained by reacting a compound of Formula (3) or Formula (4): with an ether compound comprising a hydroxy group or a C2-10 alcohol.

Abstract: A laminated body for polishing a back surface of a wafer, the laminated body including an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.

Abstract: A resist underlayer film for use in lithography process which generates less sublimate, has excellent embeddability at the time of applying onto a substrate having a hole pattern, and has high dry etching resistance, wiggling resistance and heat resistance, etc. A resist underlayer film-forming composition including a resin and a crosslinkable compound of Formula (1) or Formula (2): in which Q1 is a single bond or an m1-valent organic group, R1 and R4 are each a C2-10 alkyl group or a C2-10 alkyl group having a C1-10 alkoxy group, R2 and R5 are each a hydrogen atom or a methyl group, R3 and R6 are each a C1-10 alkyl group or a C6-40 aryl group.

Abstract: An adhesive for separatably attaching a support to a circuit side of a wafer to process a rear surface of the wafer, the adhesive including a component (A) that is cured by a hydrosilylation reaction and a component (B) containing a phenyl group-containing polyorganosiloxane, wherein a ratio in % by mass of the component (A) to the component (B) is 95:5 to 30:70. A separation method including applying the adhesive onto a first body to form an adhesion layer, attaching a second body to the adhesion layer, heating the adhesion layer from a side of the first body to cure the adhesive to form a layered body, processing the layered body, and carrying out separation between the adhesion layer, and the first and second bodies. The processing may be polishing the rear surface of the wafer.

Abstract: A temporary adhesive has excellent spin coating properties of a circuit side of a wafer and a support, and excellent heat resistance when the circuit side of the wafer or the support is attached to an adhesion layer or a rear surface of the wafer is processed, and is capable of easily separating the circuit side of the wafer from the support after polishing the rear surface of the wafer, and simply removing an adhesive attached to the wafer or the support after the separation. The adhesive contains a component (A) to be cured by a hydrosilylation reaction, and a component (B) containing an epoxy-modified polyorganosiloxane at a ratio in % by mass of the component (A) to the component (B) of 99.995:0.005 to 30:70. The component (B) is an epoxy-modified polyorganosiloxane having an epoxy value of 0.1 to 5.

Abstract: A method forms a resist underlayer film that has high resistance to dry etching using a gas containing a fluorocarbon. A method for forming a resist underlayer film includes the steps of: applying to a substrate a resist underlayer film-forming composition containing a fullerene derivative in which one to six molecules of malonic acid diester of the following Formula (1): wherein two Rs are each independently a C1-10 alkyl group, are added to one molecule of fullerene, a compound having at least two epoxy groups, and a solvent; and baking the substrate applied with the resist underlayer film-forming composition at least one time at a temperature of 240° C. or higher under an atmosphere of nitrogen, argon, or a mixture thereof.

Abstract: There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio. The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.