Abstract: The present invention provides a homogenization method of a Cu alloy containing Ru, which method comprises a step of adding at least one substance selected from the group consisting of Fe, Ni, FeSi, and Si to a Cu alloy containing at least Ru to homogenize Ru that is segregated within the Cu alloy. The homogenization method improves solubility of Ru in a Cu alloy containing Ru and thus accurate measurement of a precious metal content in the Cu alloy can be performed.

Abstract: The invention relates to a method and apparatus for measuring the optical state on the inside of a reaction vessel. The apparatus includes: linking portions that optically connect with the interior of the reaction vessel that is linkable with reaction vessels, a connecting end arranging body having an arranging surface that arranges and supports along a predetermined path, connecting ends to which is provided back ends of the light guide portions, the front ends thereof being provided to the linking portions, the connecting ends being provided to the linking portions; a measurement device having measuring ends that are successively optically connectable with the connecting ends, and in which light based on the optical state is receivable by optical connections between the connecting ends and the measuring ends; and a light guide switching mechanism that successively optically connects the connecting ends and the measuring ends.

Abstract: In a circularly polarized wave antenna apparatus including a non-reciprocal transmission line apparatus having forward and backward propagation constants different from each other, the non-reciprocal transmission line apparatus includes a transmission line part for a microwave, a series branch circuit equivalently including a capacitive element, and a shunt branch circuit branched from the transmission line part and equivalently includes an inductive element. The non-reciprocal transmission line apparatus is formed in a nonlinear shape and magnetized in a magnetization direction different from a propagation direction of the microwave.

Abstract: When a phase constant in a first mode of propagation in the forward direction is ?p, and a phase constant in a second mode of propagation in the backward direction is ?m, respective first and second electrical lengths of stub conductors are set so that a function of nonreciprocal phase shift amount ?NR=(?p??m)/2 with respect to an operating angular frequency comes close to a function ?NRZ with respect to an operating angular frequency, when beam squint of such a phenomenon that a radiation direction of electromagnetic waves radiated from a nonreciprocal transmission line apparatus changes in accordance with frequency does not occur in the vicinity of an intersection of a dispersion curve representing a relation between the phase constant ?p and the operating angular frequency and a dispersion curve representing a relation between the phase constant ?m and the operating angular frequency.

Abstract: This culture device comprises: a culture container which houses cells, magnetic particles and a culture medium; a temperature adjustment unit for adjusting the temperature of the culture container; a magnet which is provided to the outside of the culture container; a magnetic force adjustment unit for adjusting the magnetic force of the magnet; and a control unit for controlling the operation of the magnetic force adjustment unit. The magnetic force adjustment unit adjusts the magnetic force of the magnet, thereby holding magnetic particles and cells in a predetermined region within the culture container, or dispersing the magnetic particles and cells within the culture container.

Abstract: A solid-state imaging device according to the present disclosure includes: a pixel region which includes: pixel plugs formed above and electrically connected to a charge accumulation and diffusion layer, the pixel plugs respectively corresponding to pixels; lower pixel electrodes formed on and electrically connected to the pixel plugs, respectively, the lower pixel electrodes respectively corresponding to the pixels; an organic photoelectric conversion film formed on and electrically connected to the lower pixel electrodes; and an upper pixel electrode formed on and electrically connected to the organic photoelectric conversion film, and in which top surfaces of a global interconnect, a light shielding film, and a first AI pad formed in an uppermost layer of a multilayer interconnect structure disposed in a peripheral region is above a bottom surface of the organic photoelectric conversion film, the peripheral region being peripheral to the pixel region.

Abstract: A semiconductor device with improved heat radiation and improved insulation performance. The semiconductor device includes a semiconductor element, a lead frame bonded on one surface to the semiconductor element, a first insulating layer disposed on the other surface of the lead frame, and a metal base plate connected to the lead frame with the first insulating layer interposed between them, wherein an outer peripheral portion of the first insulating layer is inside an outer peripheral portion of the metal base plate, and the outer peripheral portion of the first insulating layer is covered with a second insulating layer having higher moisture resistance and higher insulation performance than the first insulating layer, the outer peripheral portion including an electric field concentrated point in an outer peripheral portion of the lead frame.

Abstract: An EBG structure of the present invention includes a ground substrate, a first dielectric layer disposed on the ground substrate, a first conductor pattern disposed on the first dielectric layer, and has an outer end and an inner end, the outer end being electrically connected to the ground substrate, a second dielectric layer disposed on the first conductor pattern, and a second conductor pattern disposed on the second dielectric layer, and has a center part and an outer end, the center part being electrically connected to the inner end of the first conductor pattern.

Abstract: When a phase constant in a first mode of propagation in the forward direction is ?p, and a phase constant in a second mode of propagation in the backward direction is ?m, respective first and second electrical lengths of stub conductors are set so that a function of nonreciprocal phase shift amount ?NR=(?p??m)/2 with respect to an operating angular frequency comes close to a function ?NRZ with respect to an operating angular frequency, when beam squint of such a phenomenon that a radiation direction of electromagnetic waves radiated from a nonreciprocal transmission line apparatus changes in accordance with frequency does not occur in the vicinity of an intersection of a dispersion curve representing a relation between the phase constant ?p and the operating angular frequency and a dispersion curve representing a relation between the phase constant ?m and the operating angular frequency.

Abstract: An insulating layer is layered above a substrate, and a plurality of pixel electrodes are formed above the insulating layer in a matrix with intervals therebetween. A photoelectric conversion layer and an opposing electrode are formed in respective order above the pixel electrodes. A dummy layer is formed above the insulating layer in a region that in plan-view is more peripheral than a pixel region in which the pixel electrodes are formed. The dummy layer is formed from the same material as the pixel electrodes. The dummy layer is composed of a plurality of dummy layer portions that are each equal to each of the pixel electrodes in terms of size in plan-view. The dummy layer functions as a support layer for planarization during polishing by chemical mechanical polishing.

Abstract: Signal lights from probe beads are localized for simultaneous detection or quantification of plural species of target substances. The present invention provides an analysis method for simultaneously detecting or quantifying plural species of target substances by measuring the light emission from plural carriers within a single container from outside of the container, these carriers comprising a plurality of substances that are respectively immobilized thereon for capturing the plural species of target substances, wherein the light emission from a desired carrier is selectively received by measuring the emission from the carriers through an optical filter.

Abstract: A semiconductor device with improved heat radiation and improved insulation performance. The semiconductor device includes a semiconductor element, a lead frame bonded on one surface to the semiconductor element, a first insulating layer disposed on the other surface of the lead frame, and a metal base plate connected to the lead frame with the first insulating layer interposed between them, wherein an outer peripheral portion of the first insulating layer is inside an outer peripheral portion of the metal base plate, and the outer peripheral portion of the first insulating layer is covered with a second insulating layer having higher moisture resistance and higher insulation performance than the first insulating layer, the outer peripheral portion including an electric field concentrated point in an outer peripheral portion of the lead frame.

Abstract: The invention includes: charging/discharging devices including storage batteries and having a grid-connected function to perform charging/discharging operations on an electric power system and an islanded-operation function to supply the electric power system with a constant-voltage constant-frequency electric power; a monitor detects an electric power state of the charging/discharging device and to transmit detection output to the charging/discharging device; and a switching unit connects and disconnects commercial power source to and from electric power system. When a commercial power source is normal, the switching unit connects the commercial power source to the electric power system and charging/discharging devices establish a grid connection.

Abstract: Provided is a method of unevenly distributing a specific element in a copper phase out of platinum group elements that exist in the copper phase, including further adding copper into a molten copper phase containing the platinum group elements including at least rhodium, thereby increasing a distribution ratio of rhodium in the molten copper phase.

Abstract: The invention relates to a light measurement apparatus for a reaction vessel, and a light measurement method, whereby the optical state on the inside of a reaction vessel can be measured efficiently and reliably.

Abstract: A nonreciprocal transmission line apparatus is provided with a cascade connection of unit cells between ports. Each unit cell includes a transmission line part for a microwave signal, and shunt branch circuits equivalently including inductive elements. Each unit cells has spontaneous magnetization or is magnetized by an external magnetic field so as to have gyrotropy by being magnetized in a magnetization direction different from a propagation direction of the transmission line part. In each of the unit cells, the shunt branch circuits includes a first stub conductor formed on one side with respect to a plane composed of the propagation direction and the magnetization direction, and a second stub conductor formed on the other side with respect to the plane, and the stub conductors have different electric length from each other.

Abstract: A semiconductor device includes a base plate having one main surface joined to an insulating substrate on which a semiconductor chip and the like are mounted and a transfer mold resin which is so provided as to cover the one main surface of the base plate, the insulating substrate, the semiconductor chip, and the like and expose the other main surface of the base plate. The coefficient of linear expansion of the base plate is lower than that of copper and the coefficient of linear expansion of the transfer mold resin is not higher than 16 ppm/° C. The transfer mold resin has such scooped shapes as to expose opposed short-side centers and the vicinity of the base plate, respectively. The base plate has mounting holes in portions exposed by the scooped shapes of the transfer mold resin.

Abstract: An embodiment of a device for automatically executing a process of generating an emulsion containing nucleic acids, amplifying the nucleic acids in the emulsion, breaking the emulsion, and separating and purifying said amplified nucleic acids, is described that comprises an emulsion generation unit for sealing beads to which nucleic acids are bound in a water-in-oil type emulsion; a nucleic acid amplification unit provided with a reaction vessel for amplifying said nucleic acids and a heating and cooling part for heating and cooling the reaction vessel; an emulsion breaking unit for breaking the emulsion after nucleic acid amplification; and a nucleic acid purification unit for recovering said amplified nucleic acids from said emulsion breaking unit.

Abstract: A reflective impedance element is connected to a port of a composite right/left-handed transmission line, and operates at a predetermined operating frequency so that an impedance when the reflective impedance element is seen from the port becomes a pure imaginary number jB. A reflective impedance component is connected to a port of the composite right/left-handed transmission line, and operates at the predetermined operating frequency so that an impedance when the reflective impedance element is seen from the port becomes ?jB.

Abstract: A solid-state imaging device according to the present disclosure includes: a pixel region which includes: pixel plugs formed above and electrically connected to a charge accumulation and diffusion layer, the pixel plugs respectively corresponding to pixels; lower pixel electrodes formed on and electrically connected to the pixel plugs, respectively, the lower pixel electrodes respectively corresponding to the pixels; an organic photoelectric conversion film formed on and electrically connected to the lower pixel electrodes; and an upper pixel electrode formed on and electrically connected to the organic photoelectric conversion film, and in which top surfaces of a global interconnect, a light shielding film, and a first AI pad formed in an uppermost layer of a multilayer interconnect structure disposed in a peripheral region is above a bottom surface of the organic photoelectric conversion film, the peripheral region being peripheral to the pixel region.