Patents by Inventor Thaddeus Gerard Dziura
Thaddeus Gerard Dziura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955391Abstract: Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.Type: GrantFiled: September 7, 2021Date of Patent: April 9, 2024Assignee: KLA-Tencor CorporationInventors: Antonio Arion Gellineau, Thaddeus Gerard Dziura
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Publication number: 20220268714Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering.Type: ApplicationFiled: April 18, 2022Publication date: August 25, 2022Inventors: Antonio Arion Gellineau, Thaddeus Gerard Dziura, John J. Hench, Andrei Veldman, Sergey Zalubovsky
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Publication number: 20220252395Abstract: Methods and systems for estimating values of geometric parameters characterizing in-plane, distorted shapes of high aspect ratio semiconductor structures based on x-ray scatterometry measurements are presented herein. A parameterized geometric model captures the scattering signature of in-plane, non-elliptical distortions in hole shape. By increasing the number of independent parameters employed to describe the in-plane shape of hole structures the model fit to the actual shape of high aspect ratio structures is improved. In one aspect, a geometrically parameterized measurement model includes more than two degrees of freedom to characterize the in-plane shape of a measured structure. In some embodiments, the geometric model includes a closed curve having three degrees of freedom or more. In some embodiments, the geometric model includes a piecewise assembly of two or more conic sections.Type: ApplicationFiled: February 1, 2022Publication date: August 11, 2022Inventors: John J. Hench, Thaddeus Gerard Dziura
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Patent number: 11313816Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering.Type: GrantFiled: June 5, 2020Date of Patent: April 26, 2022Assignee: KLA CorporationInventors: Antonio Arion Gellineau, Thaddeus Gerard Dziura, John J. Hench, Andrei Veldman, Sergey Zalubovsky
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Publication number: 20210407864Abstract: Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.Type: ApplicationFiled: September 7, 2021Publication date: December 30, 2021Inventors: Antonio Arion Gellineau, Thaddeus Gerard Dziura
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Patent number: 11145559Abstract: Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.Type: GrantFiled: June 5, 2020Date of Patent: October 12, 2021Assignee: KLA-Tencor CorporationInventors: Antonio Arion Gellineau, Thaddeus Gerard Dziura
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Publication number: 20200303265Abstract: Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.Type: ApplicationFiled: June 5, 2020Publication date: September 24, 2020Inventors: Antonio Arion Gellineau, Thaddeus Gerard Dziura
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Publication number: 20200300790Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering.Type: ApplicationFiled: June 5, 2020Publication date: September 24, 2020Inventors: Antonio Arion Gellineau, Thaddeus Gerard Dziura, John J. Hench, Andrei Veldman, Sergey Zalubovsky
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Patent number: 10775323Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering.Type: GrantFiled: January 30, 2017Date of Patent: September 15, 2020Assignee: KLA-Tencor CorporationInventors: Antonio Arion Gellineau, Thaddeus Gerard Dziura, John J. Hench, Andrei Veldman, Sergey Zalubovsky
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Patent number: 10727142Abstract: Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.Type: GrantFiled: May 28, 2018Date of Patent: July 28, 2020Assignee: KLA-Tencor CorporationInventors: Antonio Arion Gellineau, Thaddeus Gerard Dziura
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Patent number: 10612916Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.Type: GrantFiled: October 15, 2017Date of Patent: April 7, 2020Assignee: KLA-Tencor CorporationInventors: Andrei V. Shchegrov, Shankar Krishnan, Kevin Peterlinz, Thaddeus Gerard Dziura, Noam Sapiens, Stilian Ivanov Pandev
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Patent number: 10502694Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of spectra signals are measured from a particular structure of interest at a plurality of azimuth angles from one or more sensors of a metrology system. A difference spectrum is determined based on the spectra signals obtained for the azimuth angles. A quality indication of the particular structure of interest is determined and reported based on analyzing the difference spectrum.Type: GrantFiled: August 1, 2014Date of Patent: December 10, 2019Assignee: KLA-Tencor CorporationInventors: Thaddeus Gerard Dziura, Stilian Ivanov Pandev, Alexander Kuznetsov, Andrei V. Shchegrov
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Patent number: 10352695Abstract: Methods and systems for characterizing dimensions and material properties of high aspect ratio, vertically manufactured devices using transmission, small-angle x-ray scattering (T-SAXS) techniques are described herein. Exemplary structures include spin transfer torque random access memory (STT-RAM), vertical NAND memory (V-NAND), dynamic random access memory (DRAM), three dimensional FLASH memory (3D-FLASH), resistive random access memory (Re-RAM), and PC-RAM. In one aspect, T-SAXS measurements are performed at a number of different orientations that are more densely concentrated near the normal incidence angle and less densely concentrated at orientations that are further from the normal incidence angle. In a further aspect, T-SAXS measurement data is used to generate an image of a measured structure based on the measured intensities of the detected diffraction orders. In another further aspect, a metrology system is configured to generate models for combined x-ray and optical measurement analysis.Type: GrantFiled: August 5, 2016Date of Patent: July 16, 2019Assignee: KLA-Tencor CorporationInventors: Thaddeus Gerard Dziura, Antonio Arion Gellineau, Andrei V. Shchegrov
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Patent number: 10255385Abstract: Model optimization approaches based on spectral sensitivity is described. For example, a method includes determining a first model of a structure. The first model is based on a first set of parameters. A set of spectral sensitivity variations data is determined for the structure. Spectral sensitivity is determined by derivatives of the spectra with respect to the first set of parameters. The first model of the structure is modified to provide a second model of the structure based on the set of spectral sensitivity variations data. The second model of the structure is based on a second set of parameters different from the first set of parameters. A simulated spectrum derived from the second model of the structure is then provided.Type: GrantFiled: February 28, 2013Date of Patent: April 9, 2019Assignee: KLA-TENCOR CORPORATIONInventors: Stilian Ivanov Pandev, Thaddeus Gerard Dziura, Meng-Fu Shih, Lie-Quan Lee
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Patent number: 10152678Abstract: A system, method and computer program product are provided for combining raw data from multiple metrology tools. Reference values are obtained for at least one parameter of a training component. Signals are collected for the at least one parameter of the training component, utilizing a first metrology tool and a different second metrology tool. Further, at least a portion the signals are transformed into a set of signals, and for each of the at least one parameter of the training component, a corresponding relationship between the set of signals and the reference values is determined and a corresponding training model is created therefrom. Signals from a target component are collected utilizing at least the first metrology tool and the second metrology tool, and each created training model is applied to the signals collected from the target component to measure parametric values for the target component.Type: GrantFiled: November 16, 2015Date of Patent: December 11, 2018Assignee: KLA-TENCOR CORPORATIONInventors: Stilian Ivanov Pandev, Thaddeus Gerard Dziura, Andrei V. Shchegrov
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Patent number: 10151986Abstract: Methods and systems for estimating values of parameters of interest of actual device structures based on optical measurements of nearby metrology targets are presented herein. High throughput, inline metrology techniques are employed to measure metrology targets located near actual device structures. Measurement data collected from the metrology targets is provided to a trained signal response metrology (SRM) model. The trained SRM model estimates the value of one or more parameters of interest of the actual device structure based on the measurements of the metrology target. The SRM model is trained to establish a functional relationship between actual device parameters measured by a reference metrology system and corresponding optical measurements of at least one nearby metrology target. In a further aspect, the trained SRM is employed to determine corrections of process parameters to bring measured device parameter values within specification.Type: GrantFiled: July 2, 2015Date of Patent: December 11, 2018Assignee: KLA-Tencor CorporationInventors: Andrei V. Shchegrov, Thaddeus Gerard Dziura, Stilian Ivanov Pandev, Leonid Poslavsky
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Publication number: 20180350699Abstract: Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.Type: ApplicationFiled: May 28, 2018Publication date: December 6, 2018Inventors: Antonio Arion Gellineau, Thaddeus Gerard Dziura
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Publication number: 20180106735Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering.Type: ApplicationFiled: January 30, 2017Publication date: April 19, 2018Inventors: Antonio Arion Gellineau, Thaddeus Gerard Dziura, John J. Hench, Andrei Veldman, Sergey Zalubovsky
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Publication number: 20180051984Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.Type: ApplicationFiled: October 15, 2017Publication date: February 22, 2018Inventors: Andrei V. Shchegrov, Shankar Krishnan, Kevin Peterlinz, Thaddeus Gerard Dziura, Noam Sapiens, Stilian Ivanov Pandev
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Patent number: 9816810Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.Type: GrantFiled: September 16, 2016Date of Patent: November 14, 2017Assignee: KLA-Tencor CorporationInventors: Andrei V. Shchegrov, Shankar Krishnan, Kevin Peterlinz, Thaddeus Gerard Dziura, Noam Sapiens, Stilian Ivanov Pandev