Patents by Inventor THANH CUONG NGUYEN

THANH CUONG NGUYEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240142882
    Abstract: A method for discovering a new photoresist dissolvent includes obtaining input data defining a ligand material, estimating a reaction energy of a ligand exchange reaction in which a first ligand of a first complex including a first metal and the first ligand is exchanged with a second ligand, based on the input data, estimating a residual concentration of the first metal corresponding to the reaction energy based on a physical model, and verifying a photoresist dissolvent providing the second ligand based on the residual concentration.
    Type: Application
    Filed: October 20, 2023
    Publication date: May 2, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Thanh Cuong NGUYEN, Jiyoung PARK, Jungah Kim, Seungmin LEE, Inkook JANG
  • Publication number: 20230367656
    Abstract: Provided are a provisioning method for cloud service and a system thereof. The provision method according to some embodiments may include collecting a resource utilization rate of each of a plurality of cloud nodes, receiving a regular instance request from a client, determining whether there is a cloud node among the plurality of cloud nodes that satisfies a first condition, in which the collected resource utilization rate is less than a first threshold value, designating a specific cloud node from among the plurality of cloud nodes based on a determination that there is no cloud node that satisfies the first condition, and terminating at least some of spot instances pre-provisioned on the specific cloud node and provisioning a requested regular instance.
    Type: Application
    Filed: May 10, 2023
    Publication date: November 16, 2023
    Applicant: SAMSUNG SDS CO., LTD.
    Inventors: Hyo Jung LEE, Thanh-Tung Nguyen, Thanh-Cuong Nguyen, Viet-Anh Nguyen, Thi-Thanh-Lam Vu
  • Publication number: 20230369039
    Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a first layer having a first surface and a second layer having a second surface orthogonal to the first surface in a vertical direction, forming an inhibitor layer conformally on the first surface and the second surface, exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface, the exposing of the second surface may include selectively removing an edge portion of the inhibitor layer on the first surface, the edge portion contacting the second surface, and forming an interest layer on the exposed second surface.
    Type: Application
    Filed: May 10, 2023
    Publication date: November 16, 2023
    Applicants: Samsung Electronics Co., Ltd., ADEKA CORPORATION
    Inventors: Eunhyea KO, Daihyun Kim, Thanh Cuong Nguyen, Soyoung Lee, Jihyun Lee, Hoon Han, Byungkeun Hwang, Hiroyuki Uchiuzou, Kiyoshi Murata, Tomoharu Yoshino, Youjoung Cho
  • Publication number: 20230215723
    Abstract: To manufacture an integrated circuit (IC) device, a structure in which a first material film including silicon atoms and nitrogen atoms and a second material film devoid of nitrogen atoms is formed on a substrate. A carbonyl compound having a functional group without an ?-hydrogen is applied to the structure, and thus, an inhibitor is selectively formed only on an exposed surface of the first material film from among the first material film and the second material film.
    Type: Application
    Filed: December 29, 2022
    Publication date: July 6, 2023
    Applicant: ADEKA CORPORATION
    Inventors: EUNHYEA KO, Hoon Han, Soyoung Lee, Thanh Cuong Nguyen, Hiroyuki Uchiuzou, Kiyoshi Murata, Tomoharu Yoshino, Daekeon Kim, Younjoung Cho, Jiyu Choi, Byungkeun Hwang
  • Publication number: 20220415450
    Abstract: A method of estimating solubility includes obtaining input data representing a chemical structure of a target material; generating at least one descriptor based on the input data; obtaining at least one solubility parameter by providing the at least one descriptor to a machine learning model trained based on chemical structures and sample solubility parameters of sample materials; and calculating the solubility based on the at least one solubility parameter, wherein the at least one descriptor includes at least one of a zero-dimensional descriptor, a one-dimensional descriptor, a two-dimensional descriptor, or a three-dimensional descriptor, each representing the chemical structure of the target material.
    Type: Application
    Filed: June 27, 2022
    Publication date: December 29, 2022
    Inventors: THANH CUONG NGUYEN, DAEKEON KIM, JIYOUNG PARK, HYUNWOO KIM, SEUNGMIN LEE, INKOOK JANG, SUKKOO HONG
  • Publication number: 20210181628
    Abstract: Disclosed are resist compositions and semiconductor device fabrication methods using the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein R1 to R7 are as defined herein.
    Type: Application
    Filed: August 5, 2020
    Publication date: June 17, 2021
    Inventors: THANH CUONG NGUYEN, DAEKEON KIM, TSUNEHIRO NISHI, NAOTO UMEZAWA, HYUNWOO KIM