Abstract: A motor-vehicle air cleaner comprises the filter assembly, an air-cleaner housing configured to fittably and removably accommodate the filter assembly and to enclose the main filter and the auxiliary filter separately when the filter assembly is accommodated in the air-cleaner housing. The motor-vehicle air cleaner further comprises a flow restrictor configured to restrict air flow to the auxiliary filter.

Abstract: A filter assembly for a motor-vehicle air cleaner includes a main filter, an auxiliary filter set apart from the main filter, and a filter mount fixed to and configured to support the main filter and the auxiliary filter. In one embodiment, the filter mount is fittable in and removable from a housing of the air cleaner, and comprises a sealing element passing between the main filter and the auxiliary filter.

Abstract: A projector includes a network interface card, a basic input output system, and a service set identifier module. The network interface card is configured to communicate with a computer. The basic input output system is in communication with the network interface card, and is configured to store a model number and identification data for the projector. The service set identifier module is in communication with the basic input output system, and is configured to retrieve the model number and the identification data, and to utilize the model number and the identification data to create a unique service set identifier for the projector.

Abstract: A method is provided for applying back contact silver busbars to an aluminum back surface field (BSF) of a solar cell.

Abstract: A filter assembly for a motor-vehicle air cleaner comprises a main filter, an auxiliary filter set apart from the main filter, and a filter mount fixed to and configured to support the main filter and the auxiliary filter. In this embodiment, the filter mount is fittable in and removable from a housing of the air cleaner, and comprises a sealing element passing between the main filter and the auxiliary filter.

Abstract: A motor-vehicle air cleaner comprises the filter assembly, an air-cleaner housing configured to fittably and removably accommodate the filter assembly and to enclose the main filter and the auxiliary filter separately when the filter assembly is accommodated in the air-cleaner housing. The motor-vehicle air cleaner further comprises a flow restrictor configured to restrict air flow to the auxiliary filter.

Abstract: The present disclosure relates to air intake systems and methods for manufacturing the same. Systems include an air inlet that defines a slope equal to a vertical distance between a surface of a fascia shield and a surface of the engine intake channel, divided by a longitudinal distance between the shield and engine intake channel. Unwanted moisture and debris is filtered from the engine intake channel.

Abstract: According to one aspect of the invention, a circuit for accessing data in a memory is disclosed. The circuit generally comprises a first port having a read logic circuit and a first output which generates data from the memory. A second port has a read logic circuit and a write logic circuit. A second output is coupled to the second port, and also generates data from the memory. Circuits for separately selecting read and write widths for a port of a memory, such as a random access memory, are disclosed. Finally, other embodiments related to implementing a content addressable memory in a programmable logic device are disclosed. Further, a method of accessing data in a memory is disclosed.

Abstract: According to one aspect of the invention, a circuit for accessing data in a memory is disclosed. The circuit generally comprises a first port having a read logic circuit and a first output which generates data from the memory. A second port has a read logic circuit and a write logic circuit. A second output is coupled to the second port, and also generates data from the memory. Circuits for separately selecting read and write widths for a port of a memory, such as a random access memory, are disclosed. Finally, other embodiments related to implementing a content addressable memory in a programmable logic device are disclosed. Further, a method of accessing data in a memory is disclosed.

Abstract: This invention provides azeotrope-like compositions of 1,1,1,3,3-pentafluoropropane and water that are environmentally desirable for use as refrigerants, aerosol propellants, metered dose inhalers, blowing agents for polymer foam, heat transfer media, and gaseous dielectrics.

Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

Abstract: An infrared detector has a multi-layer structure to simultaneously detect IR energy in different spectral bands without changing polarity of a bias imposed across the detector. Two absorption layers are separated by a barrier layer that imposes an electrical potential barrier to one of the absorption layers. Under low bias in one direction, only one layer generates a photocurrent. Under a higher bias in the same direction, both layers generate a photocurrent. Additional absorption layers may be added to detect additional bands of energy, where the additional absorption layers generate photocurrent under a bias in another direction. Two, three, and four band detection is disclosed. Where absorbing layers within a single unit cell absorb under different bias direction, the barrier layer between those different bias direction layers suppresses a diffusing electron current. A method for detecting and resolving energy absorbed in two, three, and four different energy bands is also provided.

Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

Abstract: A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

Abstract: A method of filling a gap formed between adjacent raised surfaces on a substrate. In one embodiment the method comprises depositing a boron-doped silica glass (BSG) layer over the substrate to partially fill the gap using a thermal CVD process; exposing the BSG layer to a steam ambient at a temperature above the BSG layer's Eutectic temperature; removing an upper portion of the BSG layer by exposing the layer to a fluorine-containing etchant; and depositing an undoped silica glass (USG) layer over the BSG layer to fill the remainder of the gap.

Abstract: An apparatus and method for efficient heating fluid by using electromagnetic energy, The fluid is passed into a channeling structure within a region of space illuminated with electromagnetic energy uniformly, equally and simultaneously for rapid heating. Electromagnetic energy penetrates the fluid and causes it to heat. Structure in close proximity to the fluid in the channeling structure efficiently converts electromagnetic energy to heat to further heat the fluid to obtain a substantially homogeneous final desired temperature. The fluid is moved through the channeling structure creating turbulent to maximize the transfer of electromagnetic energy to the fluid.

Abstract: A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.

Abstract: The invention relates to azeotropic and azeotrope-like mixtures of 1-chloro-1,3,3,3-tetrafluoropropane (HCFC-244fa) and hydrogen fluoride, which are useful as intermediates in the production of HCFC-244fa.

Abstract: Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate-typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 ?m to about 25 ?m. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.