Abstract: Aspects of the present disclosure include methods and test structures for an intermediate metal level of an integrated circuit (IC). A method according to the present disclosure can include: fabricating a first plurality of metal levels including an intermediate metal level of an IC structure, the intermediate metal level being one of a plurality of metal levels in the IC structure other than a capping metal level of the IC structure; performing a first functional test on a first circuit positioned within the intermediate metal level; fabricating a second plurality of metal levels after performing the first functional test, the second plurality of metal levels including the capping metal level of the IC structure; and performing a second functional test on a second circuit positioned within the plurality of metal levels, after the fabricating of the capping metal level.

Abstract: A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

Abstract: Aspects of the present disclosure include methods and test structures for an intermediate metal level of an integrated circuit (IC). A method according to the present disclosure can include: fabricating a first plurality of metal levels including an intermediate metal level of an IC structure, the intermediate metal level being one of a plurality of metal levels in the IC structure other than a capping metal level of the IC structure; performing a first functional test on a first circuit positioned within the intermediate metal level; fabricating a second plurality of metal levels after performing the first functional test, the second plurality of metal levels including the capping metal level of the IC structure; and performing a second functional test on a second circuit positioned within the plurality of metal levels, after the fabricating of the capping metal level.

Abstract: A Multi-Time-Programmable-Memory (MTPM) array architecture, whose structure comprising of having Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) memory elements arranged in a set of twin-pairs coupled by wordlines (WLs), bitlines (BLs) and sourcelines (SLs). More specifically, the use of inactive portions of the MTPM array structure as substitutes for conventional BL write driver areas by utilizing a set of twin-pairs acting in parallel. These substituted twin-pair sets will improve programming efficiency (VGS) and retention (VDS) through a lowering Interconnect (IR) drop and VDS drops at the BL write driver.

Abstract: A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

Abstract: A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

Abstract: A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

Abstract: Approaches for a memory including a cell array are provided. The memory includes a first device of the cell array which is connected to a bitline and a node and controlled by a word line, and a second device of the cell array which comprises a third device which is connected to a source line and the node and controlled by the word line and a fourth device which is connected between the word line and the node. In the memory, in response to another word line in the cell array being activated and the word line not being activated to keep the first device in an unprogrammed state, the third device isolates and floats the node such that a voltage level of a gate to source of the first device is clamped down by the fourth device to a voltage level around zero volts.

Abstract: Approaches for a memory including a cell array are provided. The memory includes a first device of the cell array which is connected to a bitline and a node and controlled by a word line, and a second device of the cell array which comprises a third device which is connected to a source line and the node and controlled by the word line and a fourth device which is connected between the word line and the node. In the memory, in response to another word line in the cell array being activated and the word line not being activated to keep the first device in an unprogrammed state, the third device isolates and floats the node such that a voltage level of a gate to source of the first device is clamped down by the fourth device to a voltage level around zero volts.

Abstract: A system and method of operating a twin-transistor single bit multi-time programmable memory cell to provide a high gain, sensing scheme for small signals. The memory cell includes a pair of a first transistor and a second transistor providing a differential signal output. The first transistor of the memory cell couples a first circuit leg having a first current source load transistor and the second transistor couples a second circuit leg having a second current source load transistor. A programmed value is represented by a voltage threshold shift in one of the first or second transistors. A feedback circuit receives one of: a first signal or a second signal of the differential signals, and generates, in response, a feedback signal which is simultaneously applied to bias each current source load transistor in each the first and second circuit legs to amplify a voltage differential between the differential signal outputs.

Abstract: A system and method of operating a twin-transistor single bit multi-time programmable memory cell to provide a high gain, sensing scheme for small signals. The memory cell includes a pair of a first transistor and a second transistor providing a differential signal output. The first transistor of the memory cell couples a first circuit leg having a first current source load transistor and the second transistor couples a second circuit leg having a second current source load transistor. A programmed value is represented by a voltage threshold shift in one of the first or second transistors. A feedback circuit receives one of: a first signal or a second signal of the differential signals, and generates, in response, a feedback signal which is simultaneously applied to bias each current source load transistor in each the first and second circuit legs to amplify a voltage differential between the differential signal outputs.