Patents by Inventor Theo Woike

Theo Woike has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8111441
    Abstract: Method for treating a nominally pure crystal having non-linear optical properties. The nominally pure crystal contain foreign atoms at a residual concentration of less than 20 ppm so as to provide specific absorption of incident light. The method includes determining, based on testing on a specifically doped reference crystal of same type as the nominally pure crystal, a threshold value. The threshold value is defined by a temperature at which a migration of ions in the nominally pure crystal to the surface of the nominally pure crystal ceases. The foreign atoms are transformed to a higher valance state by a thermally-supported oxidation process including heating the nominally pure crystal at a heating rate that increases by less than 3 ° C. per minute to a maximum temperature above the threshold value and below a Curie temperature of the nominally pure crystal. An electrical voltage is applied so as to eliminate electrons released during the oxidation process from the nominally pure crystal.
    Type: Grant
    Filed: March 15, 2007
    Date of Patent: February 7, 2012
    Assignee: Deutsche Telekom AG
    Inventors: Karsten Buse, Matthias Falk, Theo Woike
  • Publication number: 20100067087
    Abstract: Method for treating a nominally pure crystal having non-linear optical properties. The nominally pure crystal contain foreign atoms at a residual concentration of less than 20 ppm so as to provide specific absorption of incident light. The method includes determining, based on testing on a specifically doped reference crystal of same type as the nominally pure crystal, a threshold value. The threshold value is defined by a temperature at which a migration of ions in the nominally pure crystal to the surface of the nominally pure crystal ceases. The foreign atoms are transformed to a higher valance state by a thermally-supported oxidation process including heating the nominally pure crystal at a heating rate that increases by less than 3° C. per minute to a maximum temperature above the threshold value and below a Curie temperature of the nominally pure crystal. An electrical voltage is applied so as to eliminate electrons released during the oxidation process from the nominally pure crystal.
    Type: Application
    Filed: March 15, 2007
    Publication date: March 18, 2010
    Applicant: Deutsche Telekom AG
    Inventors: Karsten Buse, Matthias Falk, Theo Woike
  • Patent number: 5016992
    Abstract: A magnetic storage medium is read by incident polarized light and reflected outgoing light defining a common plane. The polarized incident light preferably has a polarization vector at 40.degree. to 50.degree. to this plane and at the storage medium, the magnetization is in a direction perpendicular to the plane. The preamplified output signal V.sub.M from the photodiode transducing the outgoing light beam has a fixed value V.sub.O subtracted therefrom where V.sub.O is a function of the sensitivity and resolving power of the electronic circuitry. The signal V.sub.M -V.sub.O is then amplified and processed to represent the stored data.
    Type: Grant
    Filed: March 13, 1990
    Date of Patent: May 21, 1991
    Assignee: Forschungszentrum Julich GmbH
    Inventors: Theo Woike, Detlef Kerkmann, Thomas Beier, Wolfgang Krasser, Danilo Pescia
  • Patent number: 4713795
    Abstract: Nitroprusside single crystals having the formula M.sub.n [Fe(CN).sub.5 ]nH.sub.2 O, where M is a metal that forms a nitroprusside is found to have the property, when cooled to a temperature in the range between 160.degree. K. and 250.degree. K., of convertability into a long-duration metastable state by irradiation with coherent blue-green light and to return to the original state when irradiated with red light. Barium nitroprusside Ba[Fe(CN).sub.5 ]2H.sub.2 O can be switched rapidly from one state to the other without requiring cooling below about 200.degree. K. and lends itself particularly well to making single crystal memories for writing with a blue-green laser beam and reading with a red laser beam, with the readout being picked up by a photodetector diode array, on which the radiation from the nitroprusside crystal is focused. The incident laser beams are pulsed and the photodetector is turned off during pulsing.
    Type: Grant
    Filed: October 29, 1985
    Date of Patent: December 15, 1987
    Assignee: Kernforschungsanlage Julich GmbH
    Inventors: Theo Woike, Wolfgang Krasser, Siegfried Haussuhl