Abstract: The disclosure relates to a method for trimming unwanted edges from a moving paper web. The disclosure also relates to the trimming of unwanted edges while the web is traveling on a structured papermaking fabric. The method uses a water nozzle having a diameter of 0.02? or less. The method also includes the removal of the unwanted edge trimmings to a trim chute through the use of moving air, for example, an air knife. The disclosure also relates to an edge trimming apparatus.

Abstract: The disclosure relates to a method for trimming unwanted edges from a moving paper web. The disclosure also relates to the trimming of unwanted edges while the web is traveling on a structured papermaking fabric. The method uses a water nozzle having a diameter of 0.02? or less. The method also includes the removal of the unwanted edge trimmings to a trim chute through the use of moving air, for example, an air knife. The disclosure also relates to an edge trimming apparatus.

Abstract: The disclosure relates to a method for trimming unwanted edges from a moving paper web. The disclosure also relates to the trimming of unwanted edges while the web is traveling on a structured papermaking fabric. The method uses a water nozzle having a diameter of 0.02? or less. The method also includes the removal of the unwanted edge trimmings to a trim chute through the use of moving air, for example, an air knife. The disclosure also relates to an edge trimming apparatus.

Abstract: The disclosure relates to a continuous cleaning method for cleaning a moving fabric in a paper machine. The method uses one or more cleaning stages. In one embodiment, one cleaning stage applies steam to heat and soften contaminants on the fabric followed by the application of water, preferably superheated water, to remove the contaminants. Another cleaning stage may apply hot water, steam and/or superheated water via an encapsulated shower and evacuation chamber making it possible to clean the width of the fabric without substantial rewet.

Abstract: Apparatus and method for growing and observing the growth of epitaxial layers on a wafer. The apparatus includes: epitaxial growth apparatus; a source of light mounted to illuminate an entire surface of the wafer in the apparatus during growth of the epitaxial layer on the entire surface of the wafer; and apparatus for observing scattering of the light from the entire surface of the wafer during growth of the epitaxial layer on the entire surface of the wafer. The method includes growing the epitaxial layer on a surface of the wafer and observing scattering of the light from the entire surface of the wafer during growth of the epitaxial layer on the entire surface of the wafer. The growing process is varied in accordance with the observation. With an epitaxial layer of gallium nitride (GaN) the entire surface of the wafer is observed for balls of gallium.

Abstract: Apparatus and method for growing and observing the growth of epitaxial layers on a wafer. The apparatus includes: epitaxial growth apparatus; a source of light mounted to illuminate an entire surface of the wafer in the apparatus during growth of the epitaxial layer on the entire surface of the wafer; and apparatus for observing scattering of the light from the entire surface of the wafer during growth of the epitaxial layer on the entire surface of the wafer. The method includes growing the epitaxial layer on a surface of the wafer and observing scattering of the light from the entire surface of the wafer during growth of the epitaxial layer on the entire surface of the wafer. The growing process is varied in accordance with the observation. With an epitaxial layer of gallium nitride (GaN) the entire surface of the wafer is observed for balls of gallium.

Abstract: A semiconductor structure, e.g., a high electron mobility transistor structure, is formed by using metamorphic growth and strain compensation. The structure includes a substrate, a graded layer over the substrate, a first donor/barrier layer over the graded layer, and a channel layer over the first donor/barrier layer. The substrate has a substrate lattice constant, and the graded layer has a graded lattice constant. The graded layer has a first lattice constant near a bottom of the graded layer substantially equal to the substrate lattice constant and a second lattice constant near a top of the graded layer different than the first lattice constant. The first donor/barrier layer has a third lattice constant, and the channel layer has a fourth lattice constant. The second lattice constant is intermediate the third and fourth lattice constants.