Abstract: A nonvolatile memory cell having separate regions for programming and erasing. The cells are formed in an array at a face of a semiconductor body, each cell including a source that is part of a source-column line and including a drain that is part of a drain-column line. Each cell has first and second sub-channels between source and drain. The conductivity of the first sub-channel of each cell is controlled by a field-plate, which is part of a field-plate-column line, positioned over and insulated from the first sub-channel. The conductivity of each of the second sub-channels is controlled by a floating gate formed over and insulated from the second sub-channel. Each floating gate has a first tunnelling window positioned over the adjacent source-column line and has a second tunnelling window positioned over the adjacent drain-column line. Row lines, including control gates, are positioned above and insulated from the floating gates of the cells for reading, programming and erasing the cells.

Abstract: A nonvolatile memory cell having separate regions for programming and erasing. The cells are formed in an array at a face of a semiconductor body, each cell including a source that is part of a source-column line and including a drain that is part of a drain-column line. Each cell has first, second and third sub-channels between source and drain. The conductivity of the first sub-channel of each cell is controlled by a field-plate, which is part of a field-plate-column line, positioned over and insulated from the first sub-channel. The conductivity of each of the second sub-channels is controlled by a floating gate formed over and insulated from the second sub-channel. Each floating gate has a first tunnelling window positioned over the adjacent source-column line and has a second tunnelling window positioned over the adjacent drain-column line. Row lines, including control gates, are positioned over and insulated from the floating gates of the cells for reading, programming and erasing the cells.

Abstract: A nonvolatile memory cell having separate regions for programming and erasing. The cells are formed in an array at a face of a semiconductor body, each cell including a source that is part of a source-column line and including a drain that is part of a drain-column line. Each cell has first, second and third sub-channels between source and drain. The conductivity of the first sub-channel of each cell is controlled by a field-plate, which is part of a field-plate-column line, positioned over and insulated from the first sub-channel. The conductivity of each of the second sub-channels is controlled by a floating gate formed over and insulated from the second sub-channel. Each floating gate has a first tunnelling window positioned over the adjacent source-column line and has a second tunnelling window positioned over the adjacent drain-column line. Row lines, including control gates, are positioned over and insulated from the floating gates of the cells for reading, programming and erasing the cells.

Abstract: A nonvolatile memory cell having separate regions for programming and erasing. The cells are formed in an array at a face of a semiconductor body, each cell including a source that is part of a source-column line and including a drain that is part of a drain-column line. Each cell has first and second sub-channels between source and drain. The conductivity of the first sub-channel of each cell is controlled by a field-plate, which is part of a field-plate-column line, positioned over and insulated from the first sub-channel. The conductivity of each of the second sub-channels is controlled by a floating gate formed over and insulated from the second sub-channel. Each floating gate has a first tunnelling window positioned over the adjacent source-column line and has a second tunnelling window positioned over the adjacent drain-column line. Row lines, including control gates, are positioned above and insulated from the floating gates of the cells for reading, programming and erasing the cells.

Abstract: A multi-phase electrical transformer includes a rotor-stator structure that provides varying-reluctance magnetic-field paths in which the magnetic fields pass through plural stator cores on which phased primary and secondary windings are mounted and through a rotor that includes two annular poles attached to cylindrical pole-connecting means. At least one of the annular poles includes at least one field concentrator member. An optional stationary field winding surrounds the pole-connecting means in the region between said pole-connecting means and the stator cores, and permits adjustment of power factor in primary or secondary windings. The structure permits separation of stator core and pre-formed windings for repair and permits the core and windings to operate at cooler temperatures without additional cooling apparatus. The device of this invention is capable of simultaneous operation as a transformer and a synchronous machine.

Abstract: An electromagnetic torque transmission structure for transmitting torque from one shaft to a second aligned shaft, the structure including an excitation-rotor attached to a first shaft, an induction-rotor attached to a second shaft, and a magnetic field-exciter. An inner pole, an outer pole and a pole-connecter of the excitation-rotor surround the inner and outer surfaces and one end of the hollow induction-rotor cylinder. At least an inner or outer pole includes field concentrators. A stationary winding with magnetic circuitry provides an excitation field associated with the excitation-rotor. Magnetic fields from induced currents in the induction-rotor react with fields from the excitation-rotor to provide torque transmission between shafts.

Abstract: An alternator/synchronous motor structure provides varying-reluctance paths for radially directed, unidirectional magnetic fields by means of a unique rotor-stator configuration in which inner- and outer-rotor poles and a rotor pole-connecting means surround one end and the inner- and outer-cylindrical surfaces of a hollow cylindrical stator. At least one of the inner or outer poles includes at least one field concentrator member. Optional excitation field may be provided by a stationary winding requiring no brushes for energizing or by permanent magnetization.

Abstract: An induction-motor structure having a synchronous-rotor and an induction-rotor in which inner- and outer-synchronous-rotor poles and a synchronous-rotor-pole connector surround the inner-cylindrical surface of the hollow cylindrical induction rotor, the outer-cylindrical surface of a hollow cylindrical stator core having alternating-current windings and surround the ends of that induction rotor and that core. At least one of the rotor poles includes magnetic field concentrators. A stationary field winding mounted on the end of the stator may be used adjust power factor.