Abstract: Method for forming an elongated silicon crystalline body using a specially designed capillary die. The method uses a higher melt meniscus in the central region of the growth front than at the edges of the front. The edges of the top surface of the die are not concentric with the ribbon cross-section.

Abstract: A method and apparatus for drawing a monocrystalline ribbon or web from a melt comprising utilizing a shaping die including at least two elements spaced one from the other each having a portion thereof located below the level of the melt and another portion located above the level of the melt a distance sufficient to form a raised meniscus of melt about the corresponding element.

Abstract: A method for growing silicon crystalline material by the directional solidification method without cracking the growth container. The container material must have an average thermal expansion coefficient of between about 3.0 to 4.3.times.10.sup.-6 .degree.C..sup.-1 between about 20.degree. and 650.degree. C. The molten silicon is provided in the container and solidified sequentially from the enclosed regions to the open region of the container to form the crack-free silicon crystalline material.

Abstract: Apparatus for forming an elongated silicon crystalline body using a specially designed capillary die. The apparatus uses a higher melt meniscus in the central region of the growth front than at the edges of the front. The edges of the top surface of the die are not concentric with the ribbon cross-section.

Abstract: A method of growing a ribbon crystal wherein a meniscus of molten semiconductor material attached to vertical movable seed is lifted at a rate substantially equal to the rate at which the meniscus freezes, characterized by the steps of continuously sensing the brightness of the growth region of the ribbon in selected areas across the width thereof for detecting changes in the intensity of the brightness of said selected areas, and modifying the temperature of the meniscus and pulling speed in response to changes detected in the intensity for controlling the geometry of the ribbon.

Abstract: A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

Abstract: Growth of shaped crystals, such as silicon, germanium, garnet, sapphire and the like, using a crucible to contain a melt in conjunction with a wettable submerged projection extending above the level of the melt over which is formed a convex or raised meniscus of the melt by surface tension. A seed crystal is brought in contact with the meniscus and then drawn upwardly so that the melt of the meniscus crystallizes out and grows to the crystal lattice of the seed as a continuation thereof.