Abstract: A memory chip, comprising a chip memory section organized to hold a plurality of separate blocks of data, with each of the data blocks containing M individual data units; a circuit for addressing a given block of data in the chip memory section; and an N data unit chip parallel output interface from the memory chip where N is less than M, and N is greater than one. The memory chip further comprises a chip register for receiving from the chip memory section at least a portion of an addressed block of data, which portion comprises P data units, where P is greater than N, the chip register having P register stages for holding the P data units of the addressed data block, wherein the P register stages are grouped into at least a first and second groups of stages, with no group of stages comprising more than N register stages and with at least one of the groups of register stages having a plurality of stages.

Abstract: A signal margin testing system is provided for a memory having a word line voltage boosting circuit which uses a test mode decode circuit to selectively disable the word line boosting circuit and then read out data from storage cells in the memory.

Abstract: A method and device for setting at least three operating modes of a memory device is provided. The voltage signal is sensed at a first input and an enable signal is sensed at a second input. When an enable signal is received at a second input the memory device operates at the first operating mode if the voltage state at the first input is low; it operates at a second mode if the voltage state at the second is high; and it operates at a third operating mode if the voltage at the first input changes after the enable signal is received at the input. Also a four mode operation can be achieved.

Abstract: A memory device which includes several partially defective memory chips and a control circuit for receiving an address signal corresponding to a storage cell address of each of the partially defective memory chips, and for controlling, in response to the address signal, the partially defective memory chips such that only one thereof is enabled.