Patents by Inventor Theodorian Borca-Tasciuc

Theodorian Borca-Tasciuc has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9512291
    Abstract: A composite structure provides high thermal conductivity as a thermal interface structure with a relatively low filler loading. The composite structure is formed by dispersing nanoparticles in a matrix at a low filler loading, and controlled sintering of the composite structure to induce agglomeration of the nanoparticles into a connected percolating thermally conducting network structure within the matrix.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: December 6, 2016
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, RENSSELAER POLYTECHNIC INSTITUTE
    Inventors: Theodorian Borca-Tasciuc, Sushumna Iruvanti, Fengyuan Lai, Kamyar Pashayi, Joel Plawsky, Hafez Raeisi-Fard
  • Publication number: 20150247019
    Abstract: A composite structure provides high thermal conductivity as a thermal interface structure with a relatively low filler loading. The composite structure is formed by dispersing nanoparticles in a matrix at a low filler loading, and controlled sintering of the composite structure to induce agglomeration of the nanoparticles into a connected percolating thermally conducting network structure within the matrix.
    Type: Application
    Filed: May 14, 2015
    Publication date: September 3, 2015
    Applicant: Rensselaer Polytechnic Institute
    Inventors: Theodorian Borca-Tasciuc, Sushumna Iruvanti, Fengyuan Lai, Kamyar Pashayi, Joel Plawsky, Hafez Raeisi-Fard
  • Patent number: 9045674
    Abstract: A composite structure provides high thermal conductivity as a thermal interface structure with a relatively low filler loading. The composite structure is formed by dispersing nanoparticles in a matrix at a low filler loading, and controlled sintering of the composite structure to induce agglomeration of the nanoparticles into a connected percolating thermally conducting network structure within the matrix.
    Type: Grant
    Filed: January 24, 2012
    Date of Patent: June 2, 2015
    Assignee: International Business Machines Corporation
    Inventors: Sushumna Iruvanti, Theodorian Borca-Tasciuc, Hafez Raeisi-Fard, Fengyuan Lai, Kamyar Pashayi, Joel Plawsky
  • Patent number: 8524362
    Abstract: Embodiments of the invention are directed to doped pnictogen chalcogenide nanoplates, where each nanoplate comprises a rhombohedral crystal of Bi2Te3, Bi2Se3, or Sb2Te3 that is sulfur doped. Another embodiment of the invention is directed to a microwave activated method of preparation of the doped pnictogen chalcogenide nanoplates. Other embodiments of the invention are directed to bulk assemblies or fused films of the doped pnictogen chalcogenide nanoplates and their preparation from the doped pnictogen chalcogenide nanoplates such that the bulk assembly or fused film can be employed in a thermoelectric device.
    Type: Grant
    Filed: August 13, 2010
    Date of Patent: September 3, 2013
    Assignee: Rensselaer Polytechnic Institute
    Inventors: Ganpati Ramanath, Theodorian Borca-Tasciuc, Rutvik Mehta
  • Publication number: 20120187332
    Abstract: A composite structure provides high thermal conductivity as a thermal interface structure with a relatively low filler loading. The composite structure is formed by dispersing nanoparticles in a matrix at a low filler loading, and controlled sintering of the composite structure to induce agglomeration of the nanoparticles into a connected percolating thermally conducting network structure within the matrix.
    Type: Application
    Filed: January 24, 2012
    Publication date: July 26, 2012
    Applicants: RENSSELAER POLYTECHNIC INSTITUTE, INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Sushumna Iruvanti, Theodorian Borca-Tasciuc, Hafez Raeisi-Fard, Fengyuan Lai, Kamyar Pashayi, Joel Plawsky
  • Publication number: 20120111385
    Abstract: Embodiments of the invention are directed to doped pnictogen chalcogenide nanoplates, where each nanoplate comprises a rhombohedral crystal of Bi2Te3, Bi2Se3, or Sb2Te3 that is sulfur doped. Another embodiment of the invention is directed to a microwave activated method of preparation of the doped pnictogen chalcogenide nanoplates. Other embodiments of the invention are directed to bulk assemblies or fused films of the doped pnictogen chalcogenide nanoplates and their preparation from the doped pnictogen chalcogenide nanoplates such that the bulk assembly or fused film can be employed in a thermoelectric device.
    Type: Application
    Filed: August 13, 2010
    Publication date: May 10, 2012
    Inventors: GANAPATHIRAMAN RAMANATH, Theodorian Borca-Tasciuc, Rutvik Mehta