Patents by Inventor Theordorus E. Standaert

Theordorus E. Standaert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reliable low-k interconnect structure with hybrid dielectric
    Patent number: 7135398
    Abstract: An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.
    Type: Grant
    Filed: July 29, 2004
    Date of Patent: November 14, 2006
    Assignee: International Business Machines Corporation
    Inventors: John A. Fitzsimmons, Stephen E. Greco, Jia Lee, Stephen M. Gates, Terry Spooner, Matthew S. Angyal, Habib Hichri, Theordorus E. Standaert, Glenn A. Biery
  • Reliable low-k interconnect structure with hybrid dielectric
    Patent number: 6917108
    Abstract: An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.
    Type: Grant
    Filed: November 14, 2002
    Date of Patent: July 12, 2005
    Assignee: International Business Machines Corporation
    Inventors: John A. Fitzsimmons, Stephen E. Greco, Jia Lee, Stephen M. Gates, Terry Spooner, Matthew S. Angyal, Habib Hichri, Theordorus E. Standaert, Glenn A. Biery
  • Reliable low-k interconnect structure with hybrid dielectric
    Publication number: 20040094839
    Abstract: An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.
    Type: Application
    Filed: November 14, 2002
    Publication date: May 20, 2004
    Applicant: International Business Machines Corporation
    Inventors: John A. Fitzsimmons, Stephen E. Greco, Jia Lee, Stephen M. Gates, Terry Spooner, Matthew S. Angyal, Habib Hichri, Theordorus E. Standaert, Glenn A. Biery