Patents by Inventor Thi Thu Phuong PHAM

Thi Thu Phuong PHAM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device
    Patent number: 10629686
    Abstract: A semiconductor power device may include a Silicon Carbide (SiC) layer having an active power device formed on a first surface thereof. An Ohmic contact layer may be formed on a second, opposing surface of the SiC layer, the Ohmic contact layer including Nickel Silicide (NiSix) with a first silicide region containing a first precipitate of non-reacted carbon disposed between the SiC layer and a second silicide region. The second silicide region may be disposed between the first silicide region and a third silicide region, and may include a mixture of a first precipitate of refractory metal carbide and a second precipitate of non-reacted carbon. The third silicide region may contain a second precipitate of refractory metal carbide. A solder metal layer may be formed on the Ohmic contact layer, with the third silicide region disposed between the second silicide region and the solder metal layer.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: April 21, 2020
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Thi Thu Phuong Pham, Kyeongseok Park, Andrei Konstantinov, Thomas Neyer
  • CARBON-CONTROLLED OHMIC CONTACT LAYER FOR BACKSIDE OHMIC CONTACT ON A SILICON CARBIDE POWER SEMICONDUCTOR DEVICE
    Publication number: 20200044031
    Abstract: A semiconductor power device may include a Silicon Carbide (SiC) layer having an active power device formed on a first surface thereof. An Ohmic contact layer may be formed on a second, opposing surface of the SiC layer, the Ohmic contact layer including Nickel Silicide (NiSix) with a first silicide region containing a first precipitate of non-reacted carbon disposed between the SiC layer and a second silicide region. The second silicide region may be disposed between the first silicide region and a third silicide region, and may include a mixture of a first precipitate of refractory metal carbide and a second precipitate of non-reacted carbon. The third silicide region may contain a second precipitate of refractory metal carbide. A solder metal layer may be formed on the Ohmic contact layer, with the third silicide region disposed between the second silicide region and the solder metal layer.
    Type: Application
    Filed: August 2, 2018
    Publication date: February 6, 2020
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Thi Thu Phuong PHAM, Kyeongseok PARK, Andrei KONSTANTINOV, Thomas NEYER