Patents by Inventor Thibaut Devolder
Thibaut Devolder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9455012Abstract: A magnetic device includes a first magnetic layer, known as storage layer, having a uniaxial anisotropy with an easy magnetization axis in the plane of the storage layer and having a magnetization of variable direction having two positions of equilibrium along the easy magnetization axis, a second magnetic layer, known as electron spin polarization layer, having a magnetization perpendicular to that of the storage layer and situated out of plane of the electron spin polarization layer, a device configured to make circulate in the layers, and perpendicularly thereto, a current to switch from one position of equilibrium of the direction of magnetization of the storage layer to the other. The device further includes a device to apply a magnetic field, known as transverse field, the direction of which is substantially parallel to the plane of the storage layer and substantially perpendicular to the easy magnetization axis of the storage layer.Type: GrantFiled: November 25, 2015Date of Patent: September 27, 2016Assignees: COMMISSARIAT A L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIC (CNRS), UNIVERSITE JOSEPH FOURIER GRENOBLE, UNIVERSITÉPARIS SUDInventors: Bernard Dieny, Ricardo Sousa, Bertrand Lacoste, Thibaut Devolder
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Publication number: 20160155485Abstract: A magnetic device includes a first magnetic layer, known as storage layer, having a uniaxial anisotropy with an easy magnetisation axis in the plane of the storage layer and having a magnetisation of variable direction having two positions of equilibrium along the easy magnetisation axis, a second magnetic layer, known as electron spin polarisation layer, having a magnetisation perpendicular to that of the storage layer and situated out of plane of the electron spin polarisation layer, a device configured to make circulate in the layers, and perpendicularly thereto, a current to switch from one position of equilibrium of the direction of magnetisation of the storage layer to the other. The device further includes a device to apply a magnetic field, known as transverse field, the direction of which is substantially parallel to the plane of the storage layer and substantially perpendicular to the easy magnetisation axis of the storage layer.Type: ApplicationFiled: November 25, 2015Publication date: June 2, 2016Inventors: Bernard DIENY, Ricardo SOUSA, Bertrand LACOSTE, Thibaut DEVOLDER
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Patent number: 9093163Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.Type: GrantFiled: January 14, 2010Date of Patent: July 28, 2015Assignees: HITACHI, LTD., UNIVERSITE PARIS SUD XI, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventors: Joerg Wunderlich, Jan Zemen, Claude Chappert, Bryan Gallagher, Thibaut Devolder, David Williams
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Patent number: 8138758Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.Type: GrantFiled: March 18, 2008Date of Patent: March 20, 2012Assignees: Hitachi, Ltd., Universite Paris Sud XI, Centre National de la Recherche ScientifiqueInventors: Joerg Wunderlich, Tomas Jungwirth, Jan Zemen, Bryan Gallagher, Claude Chappert, Thibaut Devolder
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Publication number: 20110170339Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.Type: ApplicationFiled: January 14, 2010Publication date: July 14, 2011Inventors: Joerg Wunderlich, Jan Zemen, Claude Chappert, Bryan Gallagher, Thibaut Devolder, David Williams
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Publication number: 20090016098Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.Type: ApplicationFiled: March 18, 2008Publication date: January 15, 2009Inventors: Joerg Wunderlich, Tomas Jungwirth, Jan Zemen, Bryan Gallagher, Claude Chappert, Thibaut Devolder
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Patent number: 7298643Abstract: A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, a layer magnetic moment vector being associated with each layer, the resulting magnetic moment vector, equal to the sum of the layer magnetic moment vectors, having an amplitude smaller than at least 40% of the amplitude of the layer magnetic moment vector of maximum amplitude. The anisotropy field and/or the demagnetizing field tensor is not identical for the at least two ferromagnetic layers, whereby the angular deviations of the layer magnetic moment vectors are different at the time of the application of an external magnetic field, which enables at least two methods for directly writing into the memory element, as well as its initialization.Type: GrantFiled: April 25, 2005Date of Patent: November 20, 2007Assignees: STMicroelectronics SA, Centre National de la Recherche Scientifique, Universite de Paris SUD (Paris XI)Inventors: Joo-Von Kim, Thibaut Devolder, Claude Chappert, Cedric Maufront, Richard Fournel
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Publication number: 20050237796Abstract: A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, a layer magnetic moment vector being associated with each layer, the resulting magnetic moment vector, equal to the sum of the layer magnetic moment vectors, having an amplitude smaller than at least 40% of the amplitude of the layer magnetic moment vector of maximum amplitude. The anisotropy field and/or the demagnetizing field tensor is not identical for the at least two ferromagnetic layers, whereby the angular deviations of the layer magnetic moment vectors are different at the time of the application of an external magnetic field, which enables at least two methods for directly writing into the memory element, as well as its initialization.Type: ApplicationFiled: April 25, 2005Publication date: October 27, 2005Applicants: STMicroelectronics S.A., Centre National de la Recherche Scientifique, Universite de Paris Sud (Paris XI)Inventors: Joo-Von Kim, Thibaut Devolder, Claude Chappert, Cedric Maufront, Richard Fournel