Abstract: A method for producing patterns includes inclined flanks from a face of a substrate. A protective mask is formed covering at least two masked areas of the face of the substrate and defining at least one intermediate space. An inclined flank is plasma etched from each masked area, wherein the etching forms continuous passivation layer on the inclined flanks producing autolimitation of the etching when the inclined flanks join each other. The etching is carried out in a chamber and includes the introduction into the chamber of a gas additional to the plasma. The additional gas includes molecules of a chemical species participating in the formation of the passivation layer, the quantity of gas in the chamber being controlled so that the chamber contains a quantity of molecules of the species sufficient to form the passivation layer continuously.

Abstract: A method for producing patterns includes inclined flanks from a face of a substrate. A protective mask is formed covering at least two masked areas of the face of the substrate and defining at least one intermediate space. An inclined flank is plasma etched from each masked area, wherein the etching forms continuous passivation layer on the inclined flanks producing autolimitation of the etching when the inclined flanks join each other. The etching is carried out in a chamber and includes the introduction into the chamber of a gas additional to the plasma. The additional gas includes molecules of a chemical species participating in the formation of the passivation layer, the quantity of gas in the chamber being controlled so that the chamber contains a quantity of molecules of the species sufficient to form the passivation layer continuously.

Abstract: Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.

Abstract: An optical characterization method of repeat units forming a diffraction structure, each repeat unit including a geometric pattern produced, at least in part, using a porous material, the method including: determining the geometric parameters of the patterns; performing a scatterometric acquisition using an optical measurement system of the experimental optical response of the diffraction structure placed in a chamber at a given pressure, a presence of an adsorbable gaseous substance in the chamber causing condensation of the adsorbable gaseous substance in a part of open pores of the patterns; and determining a theoretical optical response of the diffraction structure from the determined geometric parameters and by adjusting an optical index of the material of an area of each of the patterns, in which the adsorbable gaseous substance has condensed, to make a difference between the experimental response and the theoretical response less than or equal to a given threshold.

Abstract: Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5 nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.

Abstract: A method for the optical characterisation of repeat units repeated in a regular manner so as to form a diffraction structure, each repeat unit including at least one geometric pattern, each of the patterns being produced, at least in part, using a porous material. The method includes determining the geometric parameters of the patterns and performing a scatterometric acquisition of the experimental optical response of the diffraction structure placed in a chamber at a given pressure, the presence of an adsorbable gaseous substance in the chamber causing condensation of the adsorbable gaseous substance in at least one part of open pores of the patterns of the structure.