Patents by Inventor Thierry Farjot

Thierry Farjot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR PRODUCING A SUPERCONDUCTING VANADIUM SILICIDE ON A SILICON LAYER
    Publication number: 20230061391
    Abstract: A method for producing a superconducting vanadium silicide on a silicon layer includes treating a face of the silicon layer in order to prepare it for a deposition of vanadium silicide, then depositing a vanadium silicide layer on the prepared face of the silicon layer in order to obtain a stack of a vanadium silicide layer directly deposited on the silicon layer, then an annealing the stack which increases the critical temperature of the vanadium silicide deposited. The treating includes an operation of incorporation of argon atoms in the silicon layer through the face of the silicon layer.
    Type: Application
    Filed: August 31, 2022
    Publication date: March 2, 2023
    Applicants: Commissariat á l'Energie Atomique et aux Energies Alternatives, UNIVERSITE GRENOBLE ALPES
    Inventors: Fabrice NEMOUCHI, Thierry FARJOT, Frédéric GUSTAVO, François LEFLOCH, Tom Doekle VETHAAK
  • Electromagnetic radiation detection device and manufacturing process thereof
    Publication number: 20100041558
    Abstract: The electromagnetic radiation detection device comprises at least one absorption membrane for absorbing said radiation. The absorption membrane is formed by an absorption layer made of tungsten nitride (W2N) and having a stoichiometric ratio tungsten to nitride equal to two.
    Type: Application
    Filed: August 6, 2009
    Publication date: February 18, 2010
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Abdelkader Aliane, Thierry Farjot, Claude Pigot