Patents by Inventor Thomas A. Winslow
Thomas A. Winslow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230396234Abstract: An acoustic wave resonator has a first conductive layer, piezoelectrical material formed over the first conductive layer, and second conductive layer formed over the piezoelectric material. An alignment of the first conductive layer, piezoelectric material and second conductive area defines an active region of the resonator and the active region includes a core area and a plurality of fractals extending from or recessed into the core area. The fractals maximize a perimeter-to-area ratio of the active region of the resonator. The fractals increase electromechanical coupling and a quality factor of the resonator. The fractals can have a star shape, rounded shape, asymmetric shape, or other shape that optimizes the perimeter-to-area ratio of the active region to maximize performance of the resonator. A frame can be disposed over or within the piezoelectric material. The frame is raised above the second conductive layer or recessed below the second conductive layer.Type: ApplicationFiled: June 1, 2022Publication date: December 7, 2023Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: Thomas A. Winslow, Rathnait Long, Mihir S. Patel, Douglas J. Carlson
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Patent number: 11322815Abstract: Disclosed are various embodiments for a pre-matched power resistance system including a pre-matching network for use with a passive electrical device, such as a Lange coupler or a Wilkinson power splitter, where the system provides a predetermined input impedance across a predetermined target bandwidth. The pre-matched power resistance system network further includes an on-chip thin film resistor disposed on a substrate comprising a plurality of coplanar sub-resistors electrically isolated from one another and a manifold portion comprising a plurality of manifold traces in a tiered arrangement terminating in an electrical connection to a respective one of the coplanar sub-resistors.Type: GrantFiled: April 22, 2020Date of Patent: May 3, 2022Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.Inventor: Thomas Winslow
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Publication number: 20210336317Abstract: Disclosed are various embodiments for a pre-matched power resistance system including a pre-matching network for use with a passive electrical device, such as a Lange coupler or a Wilkinson power splitter, where the system provides a predetermined input impedance across a predetermined target bandwidth. The pre-matched power resistance system network further includes an on-chip thin film resistor disposed on a substrate comprising a plurality of coplanar sub-resistors electrically isolated from one another and a manifold portion comprising a plurality of manifold traces in a tiered arrangement terminating in an electrical connection to a respective one of the coplanar sub-resistors.Type: ApplicationFiled: April 22, 2020Publication date: October 28, 2021Inventor: Thomas Winslow
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Patent number: 8427257Abstract: A monolithic microwave integrated circuit (MMIC) compatible broadside-coupled transformer including (i) a first transmission line, (ii) a second transmission line, and (iii) a third transmission line. The first and the second transmission lines generally form the broadside-coupled transformer. The third transmission line is generally connected in series with the broadside-coupled transmission line forming a ground return path of the broadside-coupled transformer.Type: GrantFiled: April 28, 2011Date of Patent: April 23, 2013Assignee: M/A-COM Technology Solutions Holdings, Inc.Inventor: Thomas A. Winslow
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Patent number: 8384484Abstract: An amplifier output impedance matching configuration including a first impedance transformer and one or more second impedance transformers. The first impedance transformer receives input signals from a power amplifier and generates output signals to a load. The one or more second impedance transformers are connected between the first impedance transformer and the load through which the output signals are passed.Type: GrantFiled: June 10, 2011Date of Patent: February 26, 2013Assignee: M/A-COM Technology Solutions Holdings, Inc.Inventor: Thomas A. Winslow
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Publication number: 20120206206Abstract: An amplifier output impedance matching configuration including a first impedance transformer and one or more second impedance transformers. The first impedance transformer receives input signals from a power amplifier and generates output signals to a load. The one or more second impedance transformers are connected between the first impedance transformer and the load through which the output signals are passed.Type: ApplicationFiled: June 10, 2011Publication date: August 16, 2012Inventor: Thomas A. Winslow
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Publication number: 20120206215Abstract: A monolithic microwave integrated circuit (MMIC) compatible broadside-coupled transformer including (i) a first transmission line, (ii) a second transmission line, and (iii) a third transmission line. The first and the second transmission lines generally form the broadside-coupled transformer. The third transmission line is generally connected in series with the broadside-coupled transmission line forming a ground return path of the broadside-coupled transformer.Type: ApplicationFiled: April 28, 2011Publication date: August 16, 2012Inventor: Thomas A. Winslow
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Patent number: 8183658Abstract: A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded within the gap between the first and second portions. A plurality of FETs also may be provided with adjacent FETs electrically isolated.Type: GrantFiled: May 28, 2008Date of Patent: May 22, 2012Assignee: Cobham Electronic Systems CorporationInventors: Ronald C. Meadows, Thomas A. Winslow
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Patent number: 7485514Abstract: A MESFET and method for fabricating a MESFET are provided. The method includes forming an n-type channel portion in a substrate and forming a p-type channel portion in the substrate. A boundary of the n-type channel portion and a boundary of the p-type channel portion define an intrinsic region in the substrate.Type: GrantFiled: January 5, 2006Date of Patent: February 3, 2009Inventor: Thomas A. Winslow
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Publication number: 20080296687Abstract: A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded within the gap between the first and second portions.Type: ApplicationFiled: May 28, 2008Publication date: December 4, 2008Inventors: Ronald C. Meadows, Thomas A. Winslow
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Publication number: 20070155072Abstract: A MESFET and method for fabricating a MESFET are provided. The method includes forming an n-type channel portion in a substrate and forming a p-type channel portion in the substrate. A boundary of the n-type channel portion and a boundary of the p-type channel portion define an intrinsic region in the substrate.Type: ApplicationFiled: January 5, 2006Publication date: July 5, 2007Inventor: Thomas Winslow
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Publication number: 20070138515Abstract: A dual field plate MESFET and method of forming a dual field plate MESFET are provided. The MESFET includes a gate electrode and a drain electrode, with the gate electrode and drain electrode formed on a substrate. The MESFET further includes a gate side field plate at the gate electrode and a drain side field plate in proximity to the drain electrode and extending over a burnout improvement region in the substrate.Type: ApplicationFiled: December 19, 2005Publication date: June 21, 2007Inventor: Thomas Winslow
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Publication number: 20070075783Abstract: An apparatus and method for transmitting signal, the apparatus comprising a front end telecommunications module including a power amplifier, a matching circuit coupled to the power amplifier, and a filter coupled to the matching circuit, such that a signal received by the power amplifier is transmitted to the filter through the matching circuit. The telecommunications module provides quad-band capability in a compact design.Type: ApplicationFiled: December 8, 2006Publication date: April 5, 2007Applicant: M/A Com, Inc.Inventors: Christopher Weigand, Thomas Winslow, Richard Giacchino
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Patent number: 6803643Abstract: HBTs in an HBT array are configured non-linearly, i.e., staggered, thus reducing the impact of thermal coupling between adjacent HBTs in the array and bypassing the minimum collector-to-collector spacing design rules required for a linear HBT array. Using this non-linear configuration, adjacent HBTs are misaligned with respect to each other. In a preferred embodiment, adjacent HBTs in the array are configured in a corner-to-corner arrangement, and in a more preferred embodiment, the collectors of the adjacent HBTs are aligned or are common, i.e., the collector of one HBT is shared with the collector of an adjacent HBT. In a most preferred embodiment, the HBTs are ballasted in an emitter-ballast/base-ballast pattern (referred to as “mixed ballasting” or “dual-ballasting”).Type: GrantFiled: September 30, 2002Date of Patent: October 12, 2004Assignee: M/A-Com, Inc.Inventor: Thomas A. Winslow
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Patent number: 6803817Abstract: The invention is a dual band power amplifier with a small footprint having excellent band-to-band isolation. An improved second and fourth harmonic trap at the output of the low band power amplifier comprises a first capacitance shunted to ground placed in series with an inductance, the inductance preferably in the form of a transmission line of predetermined length, and a second capacitance coupled between an intermediate point of the transmission line inductance and ground. Band-to-band isolation can be additively increased by further forming a ground loop between the outputs of the two power amplifiers. The ground loop further isolates the high band amplifier from the low band amplifier by causing the magnetic fields generated around the output wire bonds of the low band power amplifier to set up circulating currents primarily in the ground loop, rather than coupling into the output wire bonds of the high band power amplifier.Type: GrantFiled: February 12, 2003Date of Patent: October 12, 2004Assignee: M/A-Com, Inc.Inventors: Thomas A. Winslow, Xinjian Zhao
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Publication number: 20040155706Abstract: The invention is a dual band power amplifier with a small footprint having excellent band-to-band isolation. An improved second and fourth harmonic trap at the output of the low band power amplifier comprises a first capacitance shunted to ground placed in series with an inductance, the inductance preferably in the form of a transmission line of predetermined length, and a second capacitance coupled between an intermediate point of the transmission line inductance and ground. Band-to-band isolation can be additively increased by further forming a ground loop between the outputs of the two power amplifiers. The ground loop further isolates the high band amplifier from the low band amplifier by causing the magnetic fields generated around the output wire bonds of the low band power amplifier to set up circulating currents primarily in the ground loop, rather than coupling into the output wire bonds of the high band power amplifier.Type: ApplicationFiled: February 12, 2003Publication date: August 12, 2004Inventors: Thomas A. Winslow, Xinjian Zhao
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Publication number: 20040061131Abstract: HBTs in an HBT array are configured non-linearly, i.e., staggered, thus reducing the impact of thermal coupling between adjacent HBTs in the array and bypassing the minimum collector-to-collector spacing design rules required for a linear HBT array. Using this non-linear configuration, adjacent HBTs are misaligned with respect to each other. In a preferred embodiment, adjacent HBTs in the array are configured in a corner-to-corner arrangement, and in a more preferred embodiment, the collectors of the adjacent HBTs are aligned or are common, i.e., the collector of one HBT is shared with the collector of an adjacent HBT. In a most preferred embodiment, the HBTs are ballasted in an emitter-ballast/base-ballast pattern (referred to as “mixed ballasting” or “dual-ballasting”).Type: ApplicationFiled: September 30, 2002Publication date: April 1, 2004Inventor: Thomas A. Winslow
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Publication number: 20030178655Abstract: The invention features an improved semiconductor device comprising both active and passive devices and a method of manufacturing such semiconductor devices. A method in accord with the invention includes performing front side processing on a front side of the substrate to form an active semiconductor device on the front side of the substrate and performing back side processing on the back side of the substrate. The back side processing includes forming a via through the back side of the substrate to an electrically conductive layer formed on the front side of the substrate and forming a conductive layer in the via to form an electrically conductive path from the back side of the substrate to the electrically conductive layer formed on the front side of the substrate.Type: ApplicationFiled: March 21, 2002Publication date: September 25, 2003Applicant: Tyco Electronics Logistics AGInventor: Thomas A. Winslow