Patents by Inventor Thomas B. Faure
Thomas B. Faure has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11143953Abstract: The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic Layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomask at a wavelength of 193 nm.Type: GrantFiled: March 21, 2019Date of Patent: October 12, 2021Assignee: International Business Machines CorporationInventors: Robert L. Sandstrom, Peter H. Bartlau, Thomas B. Faure, Supratik Guha, Edward W. Kiewra, Louis M. Kindt, Alfred Wagner
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Publication number: 20200301270Abstract: The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomask at a wavelength of 193 nm.Type: ApplicationFiled: March 21, 2019Publication date: September 24, 2020Inventors: Robert L. Sandstrom, Peter H. Bartlau, Thomas B. Faure, Supratik Guha, Edward W. Kiewra, Louis M. Kindt, Alfred Wagner
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Patent number: 8568959Abstract: A photomask includes a light transmitting substrate and an absorber layer adjacent thereto. The absorber layer includes a silicide, such as molybdenum silicide, patterned into a plurality of features. The surrounding environment is controlled to prevent undesirable growth by oxidation of the absorber layer when the mask is exposed to light while being used to fabricate integrated circuits. In another aspect, the surrounding environment is controlled to encourage desirable growth by oxidation of the absorber layer when the mask is exposed to light.Type: GrantFiled: October 3, 2008Date of Patent: October 29, 2013Assignee: International Business Machines CorporationInventors: Peter H. Bartlau, Thomas B. Faure, Alfred Wagner
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Structure for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks
Patent number: 7861208Abstract: A design structure, method, and system for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks, or with other two-mask lithographic processes employing a trim mask. A design structure is embodied in a machine readable medium used in a design process, the design structure comprising regions in a finished semiconductor design that do not contain as-designed shapes. The design structure additionally includes dummy fill shapes in the regions at a predetermined final density, wherein the generated dummy shapes are sized so that their local density is increased to a predetermined value. Moreover, corresponding trim shapes act to expose an oversized portion of the dummy shape, effectively trimming each dummy shape back to the predetermined final density.Type: GrantFiled: October 16, 2007Date of Patent: December 28, 2010Assignee: International Business Machines CorporationInventors: Thomas B. Faure, Howard S. Landis, Jeanne-Tania Sucharitaves -
Patent number: 7754394Abstract: Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.Type: GrantFiled: November 14, 2006Date of Patent: July 13, 2010Assignee: International Business Machines CorporationInventors: Shaun B Crawford, Thomas B Faure, Cuc K Huynh, James P Levin
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Patent number: 7709300Abstract: A method and system for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks, or with other two-mask lithographic processes employing a trim mask. The method and system comprises locating regions in a finished semiconductor design that do not contain as-designed shapes. The method and system generates dummy fill shapes in the regions at a predetermined final density and sizes the generated dummy shapes so that their local density is increased to a predetermined value. The method and system further creates corresponding trim shapes that act to expose an oversized portion of the dummy shape, effectively trimming each dummy shape back to the predetermined final density. The method and system can be implemented on a computer program product comprising a computer useable medium including a computer readable program.Type: GrantFiled: October 6, 2006Date of Patent: May 4, 2010Assignee: International Business Machines CorporationInventors: Thomas B. Faure, Howard S. Landis, Jeanne-Tania Sucharitaves
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Publication number: 20100086876Abstract: A photomask includes a light transmitting substrate and an absorber layer adjacent thereto. The absorber layer includes a silicide, such as molybdenum silicide, patterned into a plurality of features. The surrounding environment is controlled to prevent undesirable growth by oxidation of the absorber layer when the mask is exposed to light while being used to fabricate integrated circuits. In another aspect, the surrounding environment is controlled to encourage desirable growth by oxidation of the absorber layer when the mask is exposed to light.Type: ApplicationFiled: October 3, 2008Publication date: April 8, 2010Applicant: International Business Machines CorporationInventors: Peter H. Bartlau, Thomas B. Faure, Alfred Wagner
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Publication number: 20090100399Abstract: A design structure, method, and system for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks, or with other two-mask lithographic processes employing a trim mask. A design structure is embodied in a machine readable medium used in a design process, the design structure comprising regions in a finished semiconductor design that do not contain as-designed shapes. The design structure additionally includes dummy fill shapes in the regions at a predetermined final density, wherein the generated dummy shapes are sized so that their local density is increased to a predetermined value. Moreover, corresponding trim shapes act to expose an oversized portion of the dummy shape, effectively trimming each dummy shape back to the predetermined final density.Type: ApplicationFiled: October 16, 2007Publication date: April 16, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Thomas B. FAURE, Howard S. LANDIS, Jeanne-Tania SUCHARITAVES
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Publication number: 20080113275Abstract: Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.Type: ApplicationFiled: November 14, 2006Publication date: May 15, 2008Applicant: International Business Machines CorporationInventors: Shaun B. Crawford, Thomas B. Faure, Cuc K. Huynh, James P. Levin
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Publication number: 20080086714Abstract: A method and system for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks, or with other two-mask lithographic processes employing a trim mask. The method and system comprises locating regions in a finished semiconductor design that do not contain as-designed shapes. The method and system generates dummy fill shapes in the regions at a predetermined final density and sizes the generated dummy shapes so that their local density is increased to a predetermined value. The method and system further creates corresponding trim shapes that act to expose an oversized portion of the dummy shape, effectively trimming each dummy shape back to the predetermined final density. The method and system can be implemented on a computer program product comprising a computer useable medium including a computer readable program.Type: ApplicationFiled: October 6, 2006Publication date: April 10, 2008Inventors: Thomas B. Faure, Howard S. Landis, Jeanne-Tania Sucharitaves
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Patent number: 7014959Abstract: A photomask is formed by depositing an opaque layer on a transparent substrate. A resist is formed on the opaque layer and selectively patterned to expose the portions of the opaque layer that are to be etched out. During the dry etching step, the photomask is exposed to an etchant gas mixture which exhibits a selectivity equal to or higher than 1.2:1 between the opaque layer and the resist layer. Due to the selectivity of the gas mixture, a thinner resist film can be used, thereby increasing resolution and accuracy of the opaque layer pattern. Also, due to reduced susceptibility to both a macro-loading effect and a pattern density effect, overetching of the resist and underetching of the opaque layer are significantly reduced, thereby achieving improved etching uniformity and consequently improved CD uniformity.Type: GrantFiled: October 28, 2003Date of Patent: March 21, 2006Assignee: International Business Machines CorporationInventors: Shaun B. Crawford, Timothy J. Dalton, Thomas B. Faure, Cuc K. Huynh, Michelle L. Steen, Thomas M. Wagner
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Publication number: 20040262264Abstract: A photomask is formed by depositing an opaque layer on a transparent substrate. A resist is formed on the opaque layer and selectively patterned to expose the portions of the opaque layer that are to be etched out. During the dry etching step, the photomask is exposed to an etchant gas mixture which exhibits a selectivity equal to or higher than 1.2:1 between the opaque layer and the resist layer. Due to the selectivity of the gas mixture, a thinner resist film can be used, thereby increasing resolution and accuracy of the opaque layer pattern. Also, due to reduced susceptibility to both a macro-loading effect and a pattern density effect, overetching of the resist and underetching of the opaque layer are significantly reduced, thereby achieving improved etching uniformity and consequently improved CD uniformity.Type: ApplicationFiled: October 28, 2003Publication date: December 30, 2004Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Shaun B. Crawford, Timothy J. Dalton, Thomas B. Faure, Cuc K. Huynh, Michelle L. Steen, Thomas M. Wagner
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Patent number: 6758912Abstract: A method for forming for inhibiting the buildup of cerlum-containing deposits in a process tool is disclosed. The method involves spraying a solution of a dilute acid, preferably nitric or perchloric acid, through the chamber and bowl rinse nozzles of the process tool. The method is less time consuming than previous methods for inhibiting the buildup of cerium-containing deposits and can be conveniently carried out at the end of every shift.Type: GrantFiled: October 29, 2002Date of Patent: July 6, 2004Assignee: International Business Machines CorporationInventors: Virginia Chi-Chuen Chao, Scott A. Estes, Thomas B. Faure, Thomas M. Wagner
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Publication number: 20030051740Abstract: A method for forming chrome photomasks and phase-shift masks without producing chrome opaque defects. The method involves rinsing the mask blank with dilute acid, preferably nitric or perchloric acid, during processing to form the photomask. When a dry etch is used to form the photomask, the mask blank is rinsed after wet development of the photoresist. When a wet etch is used to form the photomask, the mask blank is rinsed after the wet etch. This method decreases the number of defects per photomask as well as the mask-to-mask variation in the number of defects.Type: ApplicationFiled: October 29, 2002Publication date: March 20, 2003Inventors: Virginia Chi-Chuen Chao, Scott A. Estes, Thomas B. Faure, Thomas M. Wagner
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Patent number: 6494966Abstract: A method for removing contaminants from a substrate surface having a pattern formed on the surface. The method involves rinsing the substrate and pattern with water to remove acid reactive material. The substrate and pattern are then washed with an acid whose concentration is too low to attack the material that forms the pattern. Then the substrate is washed with water to remove the acid.Type: GrantFiled: December 7, 2000Date of Patent: December 17, 2002Assignee: International Business Machines CorporationInventors: Virginia Chi-Chuen Chao, Scott A. Estes, Thomas B. Faure, Thomas M. Wagner
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Patent number: 6426177Abstract: A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).Type: GrantFiled: December 27, 2000Date of Patent: July 30, 2002Assignee: International Business Machines CorporationInventors: Thomas B. Faure, Steven D. Flanders, Lyndon S. Gibbs, James P. Levin, Harold G. Linde, Joseph L. Malenfant, Jr., Jeffrey F. Shepard
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Patent number: 6287434Abstract: A method and apparatus are provided for the electroplating on only one side of a substrate immersed in an electroplating bath using a device which holds the substrate to be plated in spaced relation to an inhibitor electrode of the device. To fabricate x-ray masks, a boron doped silicon substrate is secured to a dielectric clamp ring which clamp ring has a through opening which overlies the inhibitor electrode. A cathode structure overlies the clamp ring and the cathode structure, substrate and clamp ring are secured to the device by a pivotable, locking mechanism. A space is formed between the back side of the substrate and the surface of the inhibitor electrode so plating occurs on the surface of the inhibitor electrode. The substrate holding apparatus comprises a plate member to which the inhibitor electrode is secured. The clamp holding the substrate overlies the inhibitor electrode and a cathode structure is secured against the plate member.Type: GrantFiled: December 14, 1999Date of Patent: September 11, 2001Assignee: International Business Machines CorporationInventors: Robin J. Ackel, Douglas E. Benoit, Michael H. Charland, Thomas B. Faure
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Patent number: 6270949Abstract: A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).Type: GrantFiled: April 11, 2000Date of Patent: August 7, 2001Assignee: International Business Machines CorporationInventors: Thomas B. Faure, Steven D. Flanders, James P. Levin, Harold G. Linde, Jeffrey F. Shepard
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Publication number: 20010005571Abstract: A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).Type: ApplicationFiled: December 27, 2000Publication date: June 28, 2001Inventors: Thomas B. Faure, Steven D. Flanders, Lyndon S. Gibbs, James P. Levin, Harold G. Linde, Joseph L. Malenfant, Jeffrey F. Shepard
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Publication number: 20010001958Abstract: A method for forming chrome photomasks and phase-shift masks without producing chrome opaque defects. The method involves rinsing the mask blank with dilute acid, preferably nitric or perchloric acid, during processing to form the photomask. When a dry etch is used to form the photomask, the mask blank is rinsed after wet development of the photoresist. When a wet etch is used to form the photomask, the mask blank is rinsed after the wet etch. This method decreases the number of defects per photomask as well as the mask-to-mask variation in the number of defects.Type: ApplicationFiled: December 7, 2000Publication date: May 31, 2001Inventors: Virginia Chi-Chuen Chao, Scott A. Estes, Thomas B. Faure, Thomas M. Wagner