Patents by Inventor Thomas C. Anthony

Thomas C. Anthony has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic memory cell structure
    Patent number: 6925003
    Abstract: The invention includes a magnetic memory cell. The magnetic memory cell includes a reference layer having a preset magnetization. A barrier layer is formed adjacent to the reference layer. A sense layer is formed adjacent to the barrier layer. A first conductive write line is electrically connected to the reference layer. The magnetic memory cell further includes a second conductive write line having a gap, the gap being filled by at least a portion of the sense layer. A write current conducting through the second conductive write line is at least partially conducted through the portion of the sense layer, the write current increasing a temperature of the sense layer.
    Type: Grant
    Filed: September 8, 2003
    Date of Patent: August 2, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Lung Tran, Thomas C. Anthony
  • Magneto resistive storage device having a magnetic field sink layer
    Patent number: 6919594
    Abstract: An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.
    Type: Grant
    Filed: October 30, 2003
    Date of Patent: July 19, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Manish Sharma, Thomas C. Anthony, Manoj Bhattacharyya
  • Thermally-assisted magnetic memory structures
    Patent number: 6911685
    Abstract: An exemplary thermally-assisted magnetic memory structure comprises a first conductor substantially surrounded by a cladding, a memory cell being thermally isolated from the first conductor by a thermally resistive region, and a second conductor electrically contacting the memory cell.
    Type: Grant
    Filed: October 10, 2003
    Date of Patent: June 28, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Thomas C. Anthony, Man K. Bhattacharyya, Robert G. Wolmsley
  • In-plane toroidal memory cell with vertically stepped conductors
    Patent number: 6906947
    Abstract: A magnetic random access memory device uses toroid-like magnetic memory cells. An axial opening extends through each of the memory cells and is generally aligned along a first axis. A first conductor and a second conductor pass through the axial opening of each memory cell and are generally aligned with the first axis.
    Type: Grant
    Filed: February 22, 2002
    Date of Patent: June 14, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Judy Bloomquist, Anthony Peter Holden, Manoj K. Bhattacharyya, Thomas C. Anthony, Darrel R. Bloomquist
  • Magnetic memory structure
    Patent number: 6906941
    Abstract: The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.
    Type: Grant
    Filed: July 22, 2003
    Date of Patent: June 14, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Lung Tran, Thomas C. Anthony
  • Magnetic memory
    Patent number: 6900491
    Abstract: Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises an insulator having a trench, a first conductor in the trench, a first magnetic layer in the trench and adjacent to the first conductor, and a second magnetic layer outside the trench.
    Type: Grant
    Filed: October 6, 2003
    Date of Patent: May 31, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventor: Thomas C. Anthony
  • Magnetic memory device having soft reference layer
    Patent number: 6891212
    Abstract: A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.
    Type: Grant
    Filed: October 30, 2003
    Date of Patent: May 10, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Manish Sharma, Thomas C. Anthony, Lung Tran
  • Magnetic memory device and methods for making same
    Patent number: 6870758
    Abstract: In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.
    Type: Grant
    Filed: October 30, 2002
    Date of Patent: March 22, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Thomas C. Anthony, Judy Bloomquist, Manoj K. Bhattacharyya, Darrel R. Bloomquist
  • Magnetic memory device
    Patent number: 6865107
    Abstract: A magnetic memory array is described having a plurality of bit cells. Each bit cell includes at least one magnetic layer having free magnetic poles with a corresponding demagnetization field. A magnetic flux absorbing layer is disposed between at least two of the plurality of bit cells.
    Type: Grant
    Filed: June 23, 2003
    Date of Patent: March 8, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Thomas C. Anthony, Frederick A. Perner, Manoj K. Bhattacharyya
  • Magnetic memory device
    Patent number: 6839271
    Abstract: A magnetic memory device which comprises a magnetic memory cell that includes a magnetic material switchable between two resistive states on the application of a magnetic field. The device also comprises a wire that is connected to the magnetic memory cell and has a conductive connecting link and a conductive word or bit line which are electrically connected to each other. The connecting link is disposed between the word or bit line and the magnetic memory cell and has a thermal resistance that is larger than that of the word or bit line so as to provide a barrier for heat conduction from the magnetic memory cell to the word or bit line.
    Type: Grant
    Filed: October 15, 2003
    Date of Patent: January 4, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Thomas C. Anthony, Frederick A. Perner, Heon Lee
  • Memory with file deletion system
    Publication number: 20040267705
    Abstract: A memory comprising a storage medium that includes a first file and first information associated with the first file and a controller coupled to the storage medium. The controller is configured to access second information and is configured to cause the first file to be deleted in response to comparing the first information to the second information.
    Type: Application
    Filed: June 17, 2003
    Publication date: December 30, 2004
    Inventors: Connie Lemus, Thomas C. Anthony, Sarah Brandenberger, Colin Stobbs, Robert Sesek
  • Magnetic memory device
    Publication number: 20040257870
    Abstract: A magnetic memory array is described having a plurality of bit cells. Each bit cell includes at least one magnetic layer having free magnetic poles with a corresponding demagnetization field. A magnetic flux absorbing layer is disposed between at least two of the plurality of bit cells.
    Type: Application
    Filed: June 23, 2003
    Publication date: December 23, 2004
    Inventors: Thomas C. Anthony, Frederick A. Perner, Manoj K. Bhattacharyya
  • Magnetic memory
    Publication number: 20040257867
    Abstract: Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises a magnetic memory cell and a conductor configured to provide a magnetic field to write the magnetic memory cell. Structure is configured to direct the magnetic field and reduce coercivity of the magnetic memory cell.
    Type: Application
    Filed: June 17, 2003
    Publication date: December 23, 2004
    Inventors: Thomas C. Anthony, Manoj K. Bhattacharyya, Darrel R. Bloomquist, Judy Bloomquist
  • Retrieving data stored in a magnetic integrated memory
    Publication number: 20040257862
    Abstract: Methods and apparatuses are disclosed for retrieving data stored in a magnetic integrated memory. In one embodiment, the method comprises: a) applying a perturbing hard-axis magnetic field to a magnetic element in a magnetic integrated memory; and b) detecting a change in an electrical parameter caused by said perturbing hard-axis magnetic field.
    Type: Application
    Filed: June 19, 2003
    Publication date: December 23, 2004
    Inventors: Thomas C. Anthony, Richard L. Hilton, Lung T. Tran
  • Thermally-assisted magnetic memory structures
    Patent number: 6819586
    Abstract: An exemplary array of thermally-assisted magnetic memory structures, each of the memory structures comprises a memory cell, a write conductor contacting the memory cell, the write conductor selecting the memory cell in a first coordinate during a write operation, and a heating system contacting the memory cell. The heating system heats the memory cell during the write operation and selects the memory cell by the heating in a second coordinate.
    Type: Grant
    Filed: October 24, 2003
    Date of Patent: November 16, 2004
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Thomas C. Anthony, Manoj K. Bhattacharyya, Janice H. Nickel
  • Magneto resistive storage device having a magnetic field sink layer
    Patent number: 6794695
    Abstract: An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.
    Type: Grant
    Filed: April 29, 2002
    Date of Patent: September 21, 2004
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Manish Sharma, Thomas C. Anthony, Manoj Bhattacharyya
  • Method and article for concentrating fields at sense layers
    Patent number: 6791857
    Abstract: A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.
    Type: Grant
    Filed: September 23, 2003
    Date of Patent: September 14, 2004
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Darrel Bloomquist, Manoj K. Bhattacharyya, Thomas C. Anthony
  • Method and article for concentrating fields at sense layers
    Patent number: 6791872
    Abstract: A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.
    Type: Grant
    Filed: August 29, 2003
    Date of Patent: September 14, 2004
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Darrel Bloomquist, Manoj K. Bhattacharyya, Thomas C. Anthony
  • Magnetic memory device having improved switching characteristics
    Patent number: 6765819
    Abstract: Magnetic memory devices are disclosed. In one embodiment, the device comprises a memory cell having an easy axis aligned along a first direction, the memory cell being configured so as to be most easily switched from one logic state to another when only receiving a magnetic field along the first direction, and a magnetic biasing element associated with the memory cell, the magnetic biasing element having a magnetic orientation aligned along a second direction different from the first direction.
    Type: Grant
    Filed: July 25, 2002
    Date of Patent: July 20, 2004
    Assignee: Hewlett-Packard Development Company, LP.
    Inventors: Manoj Bhattacharyya, Thomas C. Anthony, Frederick A. Perner, Steven C. Johnson
  • Magnetic memory device having soft reference layer
    Patent number: 6750491
    Abstract: A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.
    Type: Grant
    Filed: December 20, 2001
    Date of Patent: June 15, 2004
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Manish Sharma, Thomas C. Anthony, Lung Tran