Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius; flowing a nitrogen and carbon containing chemical comprising (H3C)—N?N—H into the processing chamber; flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and depositing a silicon and nitrogen containing film on the substrate.

Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

Abstract: A BiCMOS device and process are disclosed wherein the transistors components are fabricated on an SOI substrate. A SIMOX process is used to form a buried oxide layer in a single crystal silicon substrate followed by an epitaxial deposition to form a silicon body of varying thickness overlying the buried oxide layer. MOS transistors are then formed in a thin portion of the epitaxial layer and a vertical bipolar transistor is formed in the thick portion of the epitaxial layer.In accordance with one embodiment of the invention, a single crystal semiconductor substrate is provided having a principal surface and a buried oxide layer underlying the first surface. A lightly doped epitaxial layer of a first conductivity type having a thin MOS region and a thick bipolar region overlies the principal surface. A first and second isolation regions extending from the first surface to the buried oxide layer separate and electrically insulate the bipolar region from the MOS region.

Abstract: A CMOS device and a method for its fabrication are disclosed. In one embodiment the CMOS device includes an NMOS transistor and a PMOS transistor each of which has silicided source and drain regions and a silicon gate electrode which includes a titanium nitride barrier layer. The NMOS transistor and PMOS transistors are coupled together by a silicon layer which is capped by a layer of titanium nitride barrier material. The source and drain regions are silicided with cobalt or other metal silicide which is prevented from reacting with the silicon gate electrode and interconnect by the presence of the titanium nitride barrier layer.

Abstract: A BiCMOS device and process are disclosed wherein the transistors components are fabricated on an SOI substrate. A SIMOX process is used to form a buried oxide layer in a single crystal silicon substrate followed by an epitaxial deposition to form a silicon body of varying thickness overlying the buried oxide layer. MOS transistors are then formed in a thin portion of the epitaxial layer and a vertical bipolar transistor is formed in the thick portion of the epitaxial layer. In accordance with one embodiment of the invention, a single crystal semiconductor substrate is provided having a principal surface and a buried oxide layer underlying the first surface. A lightly doped epitaxial layer of a first conductivity type having a thin MOS region and a thick bipolar region overlies the principal surface. A first and second isolation regions extending from the first surface to the buried oxide layer separate and electrically insulate the bipolar region from the MOS region.

Abstract: A semiconductor device (10) has a bipolar transistor merged with an MOS transistor, the two transistors being separated essentially by a sidewall spacer and the bipolar transistor being self-aligned to the MOS transistor. The MOS transistor includes a gate (22) and a sorce region (38). A drain region of the MOS transistor is also an active base region (27) of the bipolar transistor. The bipoloar transistor further includes a first emitter region (40) formed in the active base region and a second emitter region (32) which is formed on the first emitter region and partially overlies the MOS transistor gate. The second emitter region is separated from the gate by a sidewall spacer (29) and an overlying dielectric layer (23).

Abstract: A multifunctional basketball game monitoring unit capable of sensing shots attempted and shots made in normal play and shots attempted and shots made from a spot location and further adjusting the score for the time a player remains in the air when shooting from the spot location; the unit acting to calculate, store, and display total time in play, total score, total percent of baskets made of total baskets attempted and total score shooting from the spot location for each of two backboard hoop assemblies.

Abstract: The disclosed invention is a method for fabricating a multi-layer semiconductor device using selective planarization. In accordance with one embodiment of the invention, conductive members are formed on a substrate and a first insulating layer is deposited onto the substrate and the conductive members. A second insulating layer, which has a lower flow temperature than the flow temperature of the first layer, is deposited onto the first layer. A photoresist mask is patterned and developed to form a window which exposes an area between the conductive members. The device is preferentially etched such that only the exposed areas of the second insulating layer are removed, leaving the first insulating layer intact. An anisotropic etch is used to remove portions of the first insulating layer, leaving spacers along the edges of the conductive members. The photoresist mask is removed and a heating step is performed which flows the remaining portions of the second insulating layer, but not the first layer.

Abstract: A multifunctional basketball game monitoring unit that allows automatic scoring taking into account foul shots, and position sensitive shots and also allows scoring of shots missed with a programmable control processing unit allowing for a great variety of differing output statistics both to visual display and to a printer and also allowing a variety of audio choices as programmed or as entered on a keyboard to the controller.

Abstract: A self-aligned contact is formed in a multi-layer semiconductor device. In one form, conductive members are formed overlying a substrate material and a first insulating layer is deposited overlying the substrate material and the conductive members. A film of material is deposited on the first insulating layer and the film of material is patterned to form a sacrificial plug in an area where a contact is to be made. A second insulating layer is deposited on the device, and the device is made substantially planar. The second insulating layer is etched back to expose the sacrificial plug. The sacrificial plug is removed by selectively etching the device such that the first and second insulating layers are left substantially unaltered. An anisotropic etch of the device is performed to expose an area of the substrate material on which a contact is to be made, and to simultaneously form sidewall spacers along edges of the conductive members.

Abstract: A multifunctional basketball monitoring unit that allows visual display and print out of a total baskets made score and the percentage of total baskets made of total baskets attempted in free throw and goal shooting either under time pressure or with no time limitation.