Abstract: A cover for surrounding both an electronic device and a support on which the electronic device is retained includes a first portion defining a back of the cover to be positioned behind the electronic device and behind the support. The first portion includes at least one aperture for receiving a mounting member configured to mount the support to a structure. The cover further includes a second portion defining a front of the cover. The second portion defines therein a cavity sized and configured such that when connected to the first portion about an outer periphery of the second portion, the cavity encloses the electronic device and the support. A heating element is coupled to the second portion and operable to heat the cavity.

Abstract: A tunable bandpass filter (10) is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V1, V2) inputted to the tunable bandpass filter (10) switches a first arrangement and a second arrangement of one or more tuning portions (15, 17-1, 17-2, 17-3) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (13). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter (10) is produced by the switching. The tuning portions include the GaAs FET switch (15), a first capacitor (17-1) connected at a first signal terminal of the GaAs FET switch and a second capacitor (17-2) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.

Abstract: A tunable bandpass filter (10) is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V1, V2) inputted to the tunable bandpass filter (10) switches a first arrangement and a second arrangement of one or more tuning portions (15, 17-1, 17-2, 17-3) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (13). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter (10) is produced by the switching. The tuning portions include the GaAs FET switch (15), a first capacitor (17-1) connected at a first signal terminal of the GaAs FET switch and a second capacitor (17-2) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.

Abstract: A tunable bandpass filter (10) is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V1, V2) inputted to the tunable bandpass filter (10) switches a first arrangement and a second arrangement of one or more tuning portions (15, 17-1, 17-2, 17-3) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (13). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter (10) is produced by the switching. The tuning portions include the GaAs FET switch (15), a first capacitor (17-1) connected at a first signal terminal of the GaAs FET switch and a second capacitor (17-2) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.

Abstract: A tunable bandpass filter (10) is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V1, V2) inputted to the tunable bandpass filter (10) switches a first arrangement and a second arrangement of one or more tuning portions (15, 17-1, 17-2, 17-3) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (13). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter (10) is produced by the switching. The tuning portions include the GaAs FET switch (15), a first capacitor (17-1) connected at a first signal terminal of the GaAs FET switch and a second capacitor (17-2) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.

Abstract: A tunable bandpass filter (10) is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V1, V2) inputted to the tunable bandpass filter (10) switches a first arrangement and a second arrangement of one or more tuning portions (15, 17-1, 17-2, 17-3) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (13). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter (10) is produced by the switching. The tuning portions include the GaAs FET switch (15), a first capacitor (17-1) connected at a first signal terminal of the GaAs FET switch and a second capacitor (17-2) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.

Abstract: A temperature sensing system for a flange mounted device is provided. The temperature sensing system (100) can be comprised of a flexible wiring board (102). The temperature sensing system can be further comprised of a temperature sensing device (122) mounted to the flexible wiring board. The flexible wiring board can have one or more conductive traces (114a, 114b, 114c) disposed thereon. The conductive traces can form an electrical connection with the temperature sensing device. The temperature sensing system can also comprise a thermal pad directly connected to the temperature sensing device. The thermal pad can be formed of a thermal conductor. The thermal pad can also have a thermal contact surface. The thermal contact surface can be sized and shaped for direct physical contact with a portion of the device (302), wherein thermal energy is communicated directly from the thermal pad to the temperature sensing device. A method for sensing a temperature of a flange mounted device is also provided.

Abstract: A tunable bandpass filter (10) is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V1, V2) inputted to the tunable bandpass filter (10) switches a first arrangement and a second arrangement of one or more tuning portions (15, 17-1, 17-2, 17-3) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (13). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter (10) is produced by the switching. The tuning portions include the GaAs FET switch (15), a first capacitor (17-1) connected at a first signal terminal of the GaAs FET switch and a second capacitor (17-2) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.