Abstract: This disclosure relates to a method for reducing gas bubble entrapment from bulk cured room temperature condensation curable silicone compositions. The method comprising applying a predefined volume of a bulk cured room temperature condensation curable silicone composition bulk curable silicone composition onto or into a target substrate. The method further comprising at least initially curing the composition in an atmosphere having a relative humidity of X %, wherein X has a value in the range of 0<X?40%, for a predetermined time or until no gas bubbles remain visible in the composition.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

Abstract: Inorganic precursors, namely iodosilane precursors, for the low temperature, low pressure deposition of silicon-containing films is provided therein. In one aspect, there is provided a process for forming a silicon-containing film process comprising: introducing a substrate and gaseous reagents comprising an iodosilane precursor having three or less iodine atoms bound to the silicon atom and at least one reagent selected from an oxygen-containing reactive gas, a nitrogen-containing reactive gas, a hydrogen-containing reactive gas and mixtures thereof into a reaction chamber; heating the reaction chamber to one or more temperatures ranging from 200° C. to 900° C. to form the silicon containing film on the substrate, provided that if the iodosilane precursor has three iodine atoms bound to the silicon atom then the heating step is conducted at one or more pressures less than 600 Torr.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (?) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of greater than about 26 GPa.

Abstract: Herein disclosed is a method for preparing a siloxane resin comprising HSiO3/2 siloxane units and containing silicon-bonded hydroxy groups in a range from 1 to 40 mole percent, which comprises: (A) combining an alkoxysilane of the formula HSi(OR)3 wherein R is selected from the group consisting of alkyl groups having 1 to 6 carbon atoms, water, an effective amount of an acid catalyst, and a first solvent, to form a reaction solution; and (B) reacting the reaction solution for a time and temperature sufficient to form the siloxane resin containing an alcohol.