Abstract: A method and apparatus for controlling deposit build-up on an interior surface of a dielectric member of a plasma processing chamber. The deposit build-up is controlled by selective ion bombardment of the inner surface by shifting location of a peak voltage amplitude of a voltage standing wave on an antenna such as a flat spiral coil of the plasma processing chamber. A region of high ion bombardment on the interior surface of the dielectric member is displaced by controlling the value of a termination capacitance over a range of values causing regions of low and high ion bombardment to move over the dielectric member in order to effect cleaning thereof.

Abstract: A high density plasma processing chamber including an electrostatic chuck for holding a wafer, and consumable parts that are highly etch resistant, less susceptible to generating contamination and temperature controllable is disclosed. The consumable parts include a chamber liner having a lower support section and a wall that is configured to surround the electrostatic chuck. The consumable parts also include a liner support structure having a lower extension, a flexible wall, and an upper extension. The flexible wall is configured to surround an external surface of the wall of the chamber liner, and the liner support flexible wall is spaced apart from the wall of the chamber liner. The lower extension of the liner support is however, configured to be in direct thermal contact with the lower support section of the chamber liner. Additionally, a baffle ring is part of the consumable parts, and is configured to be assembled with and in thermal contact with the chamber liner and the liner support.

Abstract: A method and apparatus for controlling deposit build-up on an interior surface of a dielectric member of a plasma processing chamber. The deposit build-up is controlled by selective ion bombardment of the inner surface by shifting location of a peak voltage amplitude of a voltage standing wave on an antenna such as a flat spiral coil of the plasma processing chamber. A region of high ion bombardment on the interior surface of the dielectric member is displaced by controlling the value of a termination capacitance over a range of values causing regions of low and high ion bombardment to move over the dielectric member in order to effect cleaning thereof.

Abstract: A plasma processing chamber includes a substrate holder, a gas distribution member, and a shield for preventing lightup of plasma in gas distribution holes in the gas distribution member. The chamber can include an RF energy source such as an RF antenna which inductively couples RF energy through the gas distribution member to energize process gas into a plasma state. The shield can be arranged to allow capacitive coupling of RF energy into the processing chamber for lightup of plasma in the processing chamber and/or ion bombardment of the exposed surface of the gas distribution member for cleaning thereof during processing of the substrate.

Abstract: The invention relates to a plasma processing reactor for processing a substrate. The plasma processing reactor includes a process chamber. The plasma processing reactor further includes an inductive coil configured to be coupled to a RF power source having a RF frequency wherein the inductive coil generates an electric field inside of the process chamber. The plasma processing reactor additionally includes a magnetic field producing device configured to produce a magnetic field inside the process chamber in proximity of the electric field.

Abstract: A plasma processing chamber includes a substrate holder and a member of silicon nitride such as a liner, focus ring or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize particle contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.

Abstract: A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers.

Abstract: A wafer clamp is disclosed in which a high voltage capacitor is formed on a semiconductor wafer, which rests on a conductive support. The plates of the capacitor comprise a plurality of concentric rings formed on the surface of the wafer with alternate rings connected together.