Abstract: The invention provides a method of forming an electronic device from a lamina that has a coefficient of thermal expansion that is matched or nearly matched to a constructed metal support. In some embodiments the method comprises implanting the top surface of a donor body with an ion dosage to form a cleave plane followed by exfoliating a lamina from the donor body. After exfoliating the lamina, a flexible metal support that has a coefficient of thermal expansion with a value that is within 10% of the value of the coefficient of thermal expansion of the lamina is constructed on the lamina. In some embodiments the coefficients of thermal expansion of the metal support and the lamina are within 10% or within 5% of each other between the temperatures of 100 and 600° C.

Abstract: The invention provides for a semiconductor wafer with a metal support element suitable for the formation of a flexible or sag tolerant photovoltaic cell. A method for forming a photovoltaic cell may comprise providing a semiconductor wafer have a thickness greater than 150 ?m, the wafer having a first surface and a second surface opposite the first and etching the semiconductor wafer a first time so that the first etching reduces the thickness of the semiconductor wafer to less than 150 ?m. After the wafer has been etched a first time, a metal support element may be constructed on or over the first surface; and a photovoltaic cell may be fabricated, wherein the semiconductor wafer comprises the base of the photovoltaic cell.

Abstract: The invention provides a method of forming an electronic device from a lamina that has a coefficient of thermal expansion that is matched or nearly matched to a constructed metal support. In some embodiments the method comprises implanting the top surface of a donor body with an ion dosage to form a cleave plane followed by exfoliating a lamina from the donor body. After exfoliating the lamina, a flexible metal support that has a coefficient of thermal expansion with a value that is within 10% of the value of the coefficient of thermal expansion of the lamina is constructed on the lamina. In some embodiments the coefficients of thermal expansion of the metal support and the lamina are within 10% or within 5% of each other between the temperatures of 100 and 600 ° C.

Abstract: The invention provides a method of forming an electronic device from a lamina that has a coefficient of thermal expansion that is matched or nearly matched to a constructed metal support. In some embodiments the method comprises implanting the top surface of a donor body with an ion dosage to form a cleave plane followed by exfoliating a lamina from the donor body. After exfoliating the lamina, a flexible metal support that has a coefficient of thermal expansion with a value that is within 10% of the value of the coefficient of thermal expansion of the lamina is constructed on the lamina. In some embodiments the coefficients of thermal expansion of the metal support and the lamina are within 10% or within 5% of each other between the temperatures of 500 and 1050° C.

Abstract: The invention provides for a semiconductor wafer with a metal support element suitable for the formation of a flexible or sag tolerant photovoltaic cell. A method for forming a photovoltaic cell may comprise providing a semiconductor wafer have a thickness greater than 150 ?m, the wafer having a first surface and a second surface opposite the first and etching the semiconductor wafer a first time so that the first etching reduces the thickness of the semiconductor wafer to less than 150 ?m. After the wafer has been etched a first time, a metal support element may be constructed on or over the first surface; and a photovoltaic cell may be fabricated, wherein the semiconductor wafer comprises the base of the photovoltaic cell.

Abstract: The magnetic head includes a P2 pole tip in which the P2 pole tip material is electroplated upon a sidewall of the P2 pole tip photolithographic trench. To accomplish this, a block of material is deposited upon a write gap layer, such that a generally straight, vertical sidewall of the block of material is disposed at the P2 pole tip location. Thereafter, an electroplating seed layer is deposited upon the sidewall. A P2 pole tip trench is photolithographically fabricated such that the sidewall (with its deposited seed layer) is exposed within the P2 pole tip trench. Thereafter, the P2 pole tip is formed by electroplating pole tip material upon the seed layer and outward from the sidewall within the trench, The width of the P2 pole tip is thus determined by the quantity of pole tip material that is deposited upon the sidewall.

Abstract: The magnetic head includes a P2 pole tip in which the P2 pole tip material is electroplated upon a sidewall of the P2 pole tip photolithographic trench. To accomplish this, a block of material is deposited upon a write gap layer, such that a generally straight, vertical sidewall of the block of material is disposed at the P2 pole tip location. Thereafter, an electroplating seed layer is deposited upon the sidewall. A P2 pole tip trench is photolithographically fabricated such that the sidewall (with its deposited seed layer) is exposed within the P2 pole tip trench. Thereafter, the P2 pole tip is formed by electroplating pole tip material upon the seed layer and outward from the sidewall within the trench. The width of the P2 pole tip is thus determined by the quantity of pole tip material that is deposited upon the sidewall.

Abstract: The present invention includes an overplated component which includes an enlarged mushroom head having outer portions which overhang a hard baked resist layer. The device is ultimately encapsulated such that no voids and/or redeposition problems exist under the overhang due to the presence of the hard baked resist. While not intended to be limiting in any manner, a device of the present invention is a thin film magnetic head wherein the yoke portion of a magnetic pole is formed utilizing the mushroom plating techniques of the present invention. Another mushroom plated component found in many devices is a mushroom plated electrical interconnecting stud that is formed utilizing the process steps of the present invention.

Abstract: A method and apparatus using a pre-patterned seed layer for providing an aligned coil for an inductive head structure. The method uses an aligned process where the base plate imprint is fabricated on an electrically insulating layer and the reversed image is fabricated and etched into the coil insulation material, e.g., hard bake photoresist to alleviate the problems associated with complete ion removal of the seed layer between high aspect ratio coils. The method would also not be prone to plating non-uniformities (voids), and would not be subject to seed layer undercutting in a wet etch step process.

Abstract: A process for electroplating and annealing thin-films of nickel-iron alloys having from 63% to 81% iron content by weight to produce pole pieces having saturation flux density (BS) in the range from 1.9 to 2.3 T (19 to 23 kG) with acceptable magnetic anisotropy and magnetostriction and a coercivity (HC) no higher than 160 A/m (2 Oe). The desired alloy layer properties, including small crystal size and minimal impurity inclusions, can be produced by including higher relative levels of Fe++ ions in the electroplating bath while holding the bath at a lower temperature while plating from a suitable seed layer. The resulting alloy layer adopts a small crystal size (BCC) without significant inclusion of impurities, which advantageously permits annealing to an acceptable HC while retaining the high BS desired.

Abstract: A magnetic head for a hard disk drive. The magnetic poles of the head are formed with a NiFe alloy having a graduated composition in which a higher Fe concentration is fabricated proximate the write gap layer between the magnetic poles. Each magnetic pole is fabricated in a single electroplating step in which the duty cycle of the electroplating current is altered during the electroplating operation. Where the duty cycle is greatest the Fe ion concentration is likewise greatest.

Abstract: A thin-film write head employing pole pieces formed of an electroplated body-centered cubic (BCC) nickel-iron alloy with a saturation flux density (BS) of 1.9 to 2.3 T (19 to 23 kG) and an acceptable coercivity (HC) of about 80 to about 160 A/m (1-2 Oe). The iron content of the electroplated nickel-iron alloy is from 64% to 81% by weight. The two-layer pole fabrication process holds magnetic anisotropy and coercivity to useable values while improving saturation flux density and optimizing magnetostriction. This is accomplished by first electroplating a BCC nickel-iron layer onto an underlying seed layer and then annealing the two layers to reduce coercivity to less than about 160 amps/meter and raise magnetization to acceptable levels.

Abstract: A cobalt-iron alloy film having saturation magnetization of at least about 2.30 Telsa. The film alloy includes about 55 wt % to about 75 wt. % iron and the remainder cobalt. The film is made by a process in which the film is electrodeposited from an aqueous medium which includes one or more ferrous salts, one or more cobaltous salts, a buffer having a pKa of about 6 to about 8, at least one carboxylic acid having a pKa of between about 3.5 and about 5.5, an aromatic sulfinic acid or its salt and optionally, a halide salt and/or a surfactant. The alloy film is useful as a write head in magnetic recording.

Abstract: A magnetic head for a hard disk drive. The magnetic poles of the head are formed with a NiFe alloy having a graduated composition in which a higher Fe concentration is fabricated proximate the write gap layer between the magnetic poles. Each magnetic pole is fabricated in a single electroplating step in which the duty cycle of the electroplating current is altered during the electroplating operation. Where the duty cycle is greatest the Fe ion concentration is likewise greatest.

Abstract: A magnetic head for a hard disk drive. The magnetic poles of the head are formed with a NiFe alloy having a graduated composition in which a higher Fe concentration is fabricated proximate the write gap layer between the magnetic poles. Each magnetic pole is fabricated in a single electroplating step in which the duty cycle of the electroplating current is altered during the electroplating operation. Where the duty cycle is greatest the Fe ion concentration is likewise greatest.

Abstract: A first embodiment of the mushroom plating process of the present invention starts with an overplated component which includes an enlarged mushroom head having outer portions which overhang a resist layer. The next step in the first process embodiment is a heating step in which the resist layer is hard baked. Thereafter, using a dry etch process, such as a reactive ion etch (RIE) process, the hard baked resist layer is removed in all areas except beneath the overhang of the mushroom head. The area beneath the overhang thereby remains filled with hard baked resist. Thereafter, the device is ultimately encapsulated such that no voids and/or redeposition problems exist under the overhang due to the presence of the hard baked resist. In an alternative process embodiment of the present invention the dry etch process is conducted first upon the resist layer, such that the resist layer is removed in all areas except under the overhang.

Abstract: A slider fabrication assembly and method for making the same are provided. A slider is formed on a substrate. A corrodible component of the slider is exposed to an environment in contact with the slider. A kerf region of the substrate is positioned adjacent to the slider. The kerf region is removable from the slider. A sacrificial anode is embedded in the kerf region and exposed to the environment. The sacrificial anode is electrically coupled to the corrodible component of the slider thereby forming an electrochemical cell. The sacrificial anode is less noble, i.e., more corrodible, than the corrodible slider component, and thus corrodes first. When the kerf region is removed, the corroded sacrificial anode is removed as well.

Abstract: A method of making a magnetic read/write head using a single lithographic step to define both a write coil and a pole tip structure. The use of a thin image resist layer over a hard reactive-ion etch mask and image transfer techniques allows very high resolution optical lithography which can accommodate formation of a very compact coil and pole structure. The use of a single high resolution lithography step on a planarized structure to define both a write pole tip and a write coil coplanar with the write pole tip avoids the problems of reflective notching associated with lithography to define the pole tip in the vicinity of non-planar features of the coil structure and also eliminates alignment inaccuracies inherent in separate lithography processes for the coil and pole.

Abstract: The magnetic head includes a P2 pole tip in which the P2 pole tip material is electroplated upon a sidewall of the P2 pole tip photolithographic trench. To accomplish this, a block of material is deposited upon a write gap layer, such that a generally straight, vertical sidewall of the block of material is disposed at the P2 pole tip location. Thereafter, an electroplating seed layer is deposited upon the sidewall. A P2 pole tip trench is photolithographically fabricated such that the sidewall (with its deposited seed layer) is exposed within the P2 pole tip trench. Thereafter, the P2 pole tip is formed by electroplating pole tip material upon the seed layer and outward from the sidewall within the trench, The width of the P2 pole tip is thus determined by the quantity of pole tip material that is deposited upon the sidewall.

Abstract: An etch barrier to be used in a photolithograph process is disclosed. A silicon rich etch barrier is deposited on a substrate using a low energy deposition technique. A diamond like carbon layer is deposited on the silicon rich etch barrier. Photoresist is then placed on this etch barrier DLC combination. To form photolithographic features, successive steps of oxygen and flourine reactive ion etching is used.