Abstract: A method for controlling temperature of a substrate support includes receiving first and second currents corresponding to first and second heater elements, respectively, of a substrate support, receiving first and second voltages corresponding to the first and second heater elements, respectively, calculating a first resistance of the first heater element based on the first voltage and the first current, calculating a second resistance of the second heater element based on the second voltage and the second current, calculating a first temperature of a first zone of the substrate support based on the first resistance and stored data correlating resistances to temperatures, calculating a second temperature of a second zone of the substrate support based on the second resistance and the stored data, and selectively adjusting the stored data based on a comparison between a sensed temperature and at least one of the calculated first temperature and second temperature.

Abstract: A method for controlling temperature of a substrate support includes receiving first and second currents corresponding to first and second heater elements, respectively, of a substrate support, receiving first and second voltages corresponding to the first and second heater elements, respectively, calculating a first resistance of the first heater element based on the first voltage and the first current, calculating a second resistance of the second heater element based on the second voltage and the second current, calculating a first temperature of a first zone of the substrate support based on the first resistance and stored data correlating resistances to temperatures, calculating a second temperature of a second zone of the substrate support based on the second resistance and the stored data, and selectively adjusting the stored data based on a comparison between a sensed temperature and at least one of the calculated first temperature and second temperature.

Abstract: A controller for a substrate processing system includes a resistance calculation module configured to receive a first current and a second current corresponding to a first heater element and a second heater element, respectively, of a substrate support, receive a first voltage and a second voltage corresponding to the first heater element and the second heater element, respectively, calculate a first resistance of the first heater element based on the first voltage and the first current, and calculate a second resistance of the second heater element based on the second voltage and the second current. A temperature control module is configured to separately control power provided to the first heater element and the second heater element based on the first resistance and the second resistance, respectively, and respective relationships between the first and second resistances and first and second temperatures of the substrate support.

Abstract: A controller for a substrate processing system includes a resistance calculation module configured to receive a first current and a second current corresponding to a first heater element and a second heater element, respectively, of a substrate support, receive a first voltage and a second voltage corresponding to the first heater element and the second heater element, respectively, calculate a first resistance of the first heater element based on the first voltage and the first current, and calculate a second resistance of the second heater element based on the second voltage and the second current. A temperature control module is configured to separately control power provided to the first heater element and the second heater element based on the first resistance and the second resistance, respectively, and respective relationships between the first and second resistances and first and second temperatures of the substrate support.

Abstract: A point-of-use valve (POU valve) manifold is provided that allows for multiple precursors to be delivered to a semiconductor processing chamber through a common outlet. The manifold may have a plurality of precursor inlets and a purge gas inlet. The manifold may be configured such that there are zero dead legs in the manifold when the purge gas is routed through the manifold, and may provide mounting location for the POU valves that alternate sides. One or more internal flow path volumes may include elbow features.

Abstract: A point-of-use valve (POU valve) manifold is provided that allows for multiple precursors to be delivered to a semiconductor processing chamber through a common outlet. The manifold may have a plurality of precursor inlets and a purge gas inlet. The manifold may be configured such that there are zero dead legs in the manifold when the purge gas is routed through the manifold, and may provide mounting location for the POU valves that alternate sides. One or more internal flow path volumes may include elbow features.