Abstract: An MOS transistor with high output voltage endurance comprises a semiconductor substrate with the surface thereof including a doping area having a surface doping concentration decreasing from the drain connection area to the drain-side edge of the gate oxide layer. This doping area is formed by ion implantation and subsequent outdiffusion of individual partial areas. The first partial area has a size in the drain-gate extension which is considerably larger than the penetration depth of the outdiffusion in the substrate. The second partial area has a size and a distance to the first partial area which are both smaller than the penetration depth of the outdiffusion in the substrate. In the outdiffused condition, the individual diffusions originating from the individual, respectively adjacent first and second partial areas merge into each other on the surface of the substrate to thus obtain a doping concentration gradient for a constant conduction type of the doping area.

Abstract: An ink replenishment kit and method for an inkjet printer includes a replaceable ink supply module providing replenishment of an inkjet printhead. The module includes a collapsible bag, an enclosure box, a connective tube, and an on/off valve. These four components are incorporated into a composite sealed system which remains intact during shipment, storage, installation and operation. A coupler is provided to securely attach a print cartridge inlet with the on/off valve to hold them together in an open position allowing ink to be replenished into the print cartridge from the collapsible bag.

Abstract: An MOS transistor with high voltage sustaining capability and low closing resistance comprises a substrate (10) provided with a doping of a first conductive type, and a well area (20) formed in the substrate (10) and provided with a doping of a second conductive type opposite to the first conductive type. Further, the MOS transistor comprises source and drain areas (26,28) of the first conductive type formed in the well area (20). The MOS transistor is provided with a gate (32) comprising a gate oxide layer (36) and arranged between the source region (26) and the drain area (28), the gate (32) having drain-side end region (42) arranged at a distance (40) from the drain area (28). The MOS transistor comprises a drain extension region (24) provided with a doping of the first conductive type and having the drain area (28) arranged therein, with the drain extension region (24) reaching below the drain-side end region (42) of the gate (32).