Patents by Inventor Thomas Gilmore
Thomas Gilmore has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11935740Abstract: A semiconductor device including a first dielectric layer and a second dielectric layer is formed by forming an inhibitor layer over a semiconductor material. The inhibitor layer includes at least silicon and nitrogen. The semiconductor material is heated in an oxygen-containing ambient which oxidizes the inhibitor layer and forms the first dielectric layer which includes the oxidized inhibitor layer, and oxidizes the semiconductor material to form the second dielectric layer. The second dielectric layer is thicker than, the first dielectric layer. The first dielectric layer and the second dielectric layer each include at least 90 weight percent silicon dioxide and less than 1 weight percent nitrogen. The first dielectric layer and the second dielectric layer may be used to form gate dielectric layers for a first MOS transistor and a second MOS transistor that operates at a higher voltage than the first MOS transistor.Type: GrantFiled: April 27, 2022Date of Patent: March 19, 2024Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Mark Francis Arendt, Damien Thomas Gilmore
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Patent number: 11911880Abstract: A hand tool includes a handle section, a working end operably coupled to the handle section, and a jaw assembly disposed at the working end. The jaw assembly includes a movable jaw and a fixed jaw. A span defined between the movable jaw and the fixed jaw is adjustable. Each of the movable jaw and the fixed jaw includes an array of teeth defined by ridges that extend substantially parallel to each other. The array of teeth on each of the fixed jaw and the movable jaw includes a first set of teeth having a first width and a first depth, and a second set of teeth having a second width and a second depth. The first depth is less than the second depth and the first width is less than the second width.Type: GrantFiled: October 25, 2022Date of Patent: February 27, 2024Assignee: APEX BRANDS, INC.Inventors: Noah Thomas Steen, Kelsey David Gilmore
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Publication number: 20230420258Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.Type: ApplicationFiled: July 5, 2023Publication date: December 28, 2023Inventors: Damien Thomas Gilmore, Jonathan P. Davis, Azghar H Khazi-Syed, Shariq Arshad, Khanh Quang Le, Kaneez Eshaher Banu, Jonathan Roy Garrett, Sarah Elizabeth Bradshaw, Eugene Clayton Davis
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Patent number: 11742208Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.Type: GrantFiled: March 25, 2020Date of Patent: August 29, 2023Assignee: Texas Instruments IncorporatedInventors: Damien Thomas Gilmore, Jonathan P. Davis, Azghar H Khazi-Syed, Shariq Arshad, Khanh Quang Le, Kaneez Eshaher Banu, Jonathan Roy Garrett, Sarah Elizabeth Bradshaw, Eugene Clayton Davis
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Publication number: 20230245919Abstract: Described examples include a method having steps of forming an isolation pad oxide layer on a substrate and forming and patterning a silicon nitride layer on the isolation pad oxide layer. The method also has steps of oxidizing portions of the substrate not covered by the silicon nitride layer to form a LOCOS layer and oxidizing the silicon nitride layer in an oxidizing ambient containing a chlorine source to form a silicon dioxide layer.Type: ApplicationFiled: January 28, 2022Publication date: August 3, 2023Inventors: Mark Francis Arendt, Damien Thomas Gilmore
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Publication number: 20220254627Abstract: A semiconductor device including a first dielectric layer and a second dielectric layer is formed by forming an inhibitor layer over a semiconductor material. The inhibitor layer includes at least silicon and nitrogen. The semiconductor material is heated in an oxygen-containing ambient which oxidizes the inhibitor layer and forms the first dielectric layer which includes the oxidized inhibitor layer, and oxidizes the semiconductor material to form the second dielectric layer. The second dielectric layer is thicker than, the first dielectric layer. The first dielectric layer and the second dielectric layer each include at least 90 weight percent silicon dioxide and less than 1 weight percent nitrogen. The first dielectric layer and the second dielectric layer may be used to form gate dielectric layers for a first MOS transistor and a second MOS transistor that operates at a higher voltage than the first MOS transistor.Type: ApplicationFiled: April 27, 2022Publication date: August 11, 2022Inventors: Mark Francis Arendt, Damien Thomas Gilmore
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Publication number: 20220196558Abstract: A sensing device for monitoring electromagnetic radiation emanating from a plasma processing system. The sensing device may, for example, comprise at least two of a first probe for detecting a time varying RF electric field, a second probe for detecting a time varying RF magnetic field, and an optical probe for detecting the modulated light emission. The sensing device may, for example, further comprise a signal processing unit configured to receive a signal from each probe and to monitor the electromagnetic radiation with respect to only a single frequency of each signal.Type: ApplicationFiled: December 17, 2021Publication date: June 23, 2022Inventors: Michael HOPKINS, Paul SCULLIN, JJ LENNON, Thomas GILMORE
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Patent number: 11348782Abstract: A semiconductor device including a first dielectric layer and a second dielectric layer is formed by forming an inhibitor layer over a semiconductor material. The inhibitor layer includes at least silicon and nitrogen. The semiconductor material is heated in an oxygen-containing ambient which oxidizes the inhibitor layer and forms the first dielectric layer which includes the oxidized inhibitor layer, and oxidizes the semiconductor material to form the second dielectric layer. The second dielectric layer is thicker than, the first dielectric layer. The first dielectric layer and the second dielectric layer each include at least 90 weight percent silicon dioxide and less than 1 weight percent nitrogen. The first dielectric layer and the second dielectric layer may be used to form gate dielectric layers for a first MOS transistor and a second MOS transistor that operates at a higher voltage than the first MOS transistor.Type: GrantFiled: March 31, 2020Date of Patent: May 31, 2022Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Mark Francis Arendt, Damien Thomas Gilmore
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Publication number: 20210305042Abstract: A semiconductor device including a first dielectric layer and a second dielectric layer is formed by forming an inhibitor layer over a semiconductor material. The inhibitor layer includes at least silicon and nitrogen. The semiconductor material is heated in an oxygen-containing ambient which oxidizes the inhibitor layer and forms the first dielectric layer which includes the oxidized inhibitor layer, and oxidizes the semiconductor material to form the second dielectric layer. The second dielectric layer is thicker than, the first dielectric layer. The first dielectric layer and the second dielectric layer each include at least 90 weight percent silicon dioxide and less than 1 weight percent nitrogen. The first dielectric layer and the second dielectric layer may be used to form gate dielectric layers for a first MOS transistor and a second MOS transistor that operates at a higher voltage than the first MOS transistor.Type: ApplicationFiled: March 31, 2020Publication date: September 30, 2021Applicant: Texas Instruments IncorporatedInventors: Mark Francis Arendt, Damien Thomas Gilmore
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Publication number: 20210305050Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.Type: ApplicationFiled: March 25, 2020Publication date: September 30, 2021Applicant: Texas Instruments IncorporatedInventors: Damien Thomas Gilmore, Jonathan P. Davis, Azghar H Khazi-Syed, Shariq Arshad, Khanh Quang Le, Kaneez Eshaher Banu, Jonathan Roy Garrett, Sarah Elizabeth Bradshaw, Eugene Clayton Davis
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Patent number: 9939808Abstract: A method of process control for a batch process includes pre-measuring a monitor lot to obtain pre-metrology data regarding at least a first process parameter. There are no product units included with the monitor lot. The pre-metrology data is saved together with an identifier for the first monitor unit. A batch is staged for the batch process including at least a first product lot including a plurality of product units together with the first monitor unit. The batch is batch processed through the batch process. After the batch processing, the first monitor unit is measured to obtain post-metrology data for the first process parameter. At least one of the post-metrology data and a difference between the post-metrology data and pre-metrology data is saved to a data file with an identifier for the first product lot or the pre-metrology data and post-metrology data is directly written to the first product lot.Type: GrantFiled: December 15, 2014Date of Patent: April 10, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Damien Thomas Gilmore, Nicholas Andrew Kusek, Kenneth Ryan Thomas, Michael Glenn Williams, Robert Ray Spangler, Ingu Song
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Publication number: 20150253764Abstract: A method of process control for a batch process includes pre-measuring a monitor lot to obtain pre-metrology data regarding at least a first process parameter. There are no product units included with the monitor lot. The pre-metrology data is saved together with an identifier for the first monitor unit. A batch is staged for the batch process including at least a first product lot including a plurality of product units together with the first monitor unit. The batch is batch processed through the batch process. After the batch processing, the first monitor unit is measured to obtain post-metrology data for the first process parameter. At least one of the post-metrology data and a difference between the post-metrology data and pre-metrology data is saved to a data file with an identifier for the first product lot or the pre-metrology data and post-metrology data is directly written to the first product lot.Type: ApplicationFiled: December 15, 2014Publication date: September 10, 2015Inventors: DAMIEN THOMAS GILMORE, NICHOLAS ANDREW KUSEK, KENNETH RYAN THOMAS, MICHAEL GLENN WILLIAMS, ROBERT RAY SPANGLER, INGU SONG
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Patent number: 8222248Abstract: The present invention provides compounds of the following structure; A-L1-B—C-D that are useful for treating or preventing conditions or disorders associated with DGAT1 activity in animals, particularly humans.Type: GrantFiled: October 17, 2007Date of Patent: July 17, 2012Assignee: Novartis AGInventors: Moo Je Sung, Gary Mark Coppola, Taeyoung Yoon, Thomas A. Gilmore
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Patent number: 8212040Abstract: Compounds of Formula (IA) wherein R1, R2, R3, R4 and R5 are as defined herein for Formula (IA), or a tautomer, prodrug, solvate, or salt thereof; pharmaceutical compositions containing such compounds, and methods of modulating the glucocorticoid receptor function and methods of treating disease-states or conditions mediated by the glucocorticoid receptor function or characterized by inflammatory, allergic, or proliferative processes in a patient using these compounds.Type: GrantFiled: April 25, 2006Date of Patent: July 3, 2012Assignee: Boehringer Ingelheim Pharmaceuticals, Inc.Inventors: Younes Bekkali, Rajashehar Betageri, Mario G. Cardozo, Thomas A. Gilmore, Christian Hanke Justus Joachim Harcken, Thomas Martin Kirrane, Daniel Kuzmich, John Robert Proudfoot, Doris Riether, Hidenori Takahashi, David S. Thomson, Ji Wang, Renee M. Zindell, Hossein Razavi
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Patent number: 7932392Abstract: Compounds of Formula (IA) wherein R1, R2, R3, R4 and R5 are as defined herein for Formula (IA), or a tautomer, prodrug, solvate, or salt thereof; pharmaceutical compositions containing such compounds, and methods of modulating the glucocorticoid receptor function and methods of treating disease-states or conditions mediated by the glucocorticoid receptor function or characterized by inflammatory, allergic, or proliferative processes in a patient using these compounds.Type: GrantFiled: July 20, 2005Date of Patent: April 26, 2011Assignee: Boehringer Ingelheim Pharmaceuticals, Inc.Inventors: Rajashekhar Betageri, Thomas A. Gilmore, Daniel Kuzmich, John Robert Proudfoot, David S. Thomson
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Publication number: 20110046133Abstract: The present invention provides compounds of the following structure; A-L1-B-C-D that are useful for treating or preventing conditions or disorders associated with DGAT1 activity in animals, particularly humans.Type: ApplicationFiled: October 17, 2007Publication date: February 24, 2011Inventors: Moo Je Sung, Gary Mark Coppola, Taeyoung Yoon, Thomas A. Gilmore
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Patent number: 7553966Abstract: Compounds of Formula (IA) and Formula (IB) wherein R1, R2, R3, R4, R5, and R6 are as defined herein for Formula (IA) or Formula (IB), or a tautomer, prodrug, solvate, or salt thereof; pharmaceutical compositions containing such compounds, and methods of modulating the glucocorticoid receptor function and methods of treating disease-states or conditions mediated by the glucocorticoid receptor function or characterized by inflammatory, allergic, or proliferative processes in a patient using these compounds.Type: GrantFiled: September 17, 2004Date of Patent: June 30, 2009Assignee: Boehringer Ingelheim Pharmaceuticals, Inc.Inventors: Rajashehar Betageri, Thomas A. Gilmore, Christian Hanke Justus Joachim Harcken, Daniel Kuzmich, Hossein Razavi, Doris Riether, David S. Thomson, Ji Wang
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Publication number: 20060220599Abstract: A drive unit for use with a vibration welder having first and second electromagnets, each having first and second terminals, and being operable to reciprocate a vibration platen, includes phase U, V, and W drive circuitry and control circuitry. The phase U drive circuitry is coupled to the first terminal of the first electromagnet. The phase V drive circuitry is coupled to the first terminal of the second electromagnet. The phase W drive circuitry is coupled to the second terminals of the first and second electromagnets. The control circuitry is operable to control the phase U, V, and W drive circuitry to generate a first drive signal for energizing the first electromagnet and a second drive signal for energizing the second electromagnet.Type: ApplicationFiled: April 4, 2005Publication date: October 5, 2006Inventors: David Siegler, Thomas Gilmore, William Straw
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Patent number: 7074171Abstract: The present invention relates to a method and apparatus for a two-piece box construction which is a continuous, in-line process in which a pair of panels or blanks are fed simultaneously from one end of the apparatus and move along a substantially linear path through the apparatus where they are joined together so that upon exit from such apparatus the joined blanks can be fed directly, in line, into a conventional folder/gluer apparatus for final folding, gluing and other processing.Type: GrantFiled: July 23, 2004Date of Patent: July 11, 2006Assignee: J & L Group International, LLC.Inventors: James A. Mahlum, Thomas A. Gilmore
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Patent number: 7019006Abstract: Disclosed are novel aromatic compounds which are useful for treating diseases or pathological conditions involving inflammation such as chronic inflammatory diseases. Also disclosed are pharmaceutical compositions containing and processes of making such compounds.Type: GrantFiled: July 21, 2003Date of Patent: March 28, 2006Assignee: Boehringer Ingelheim Pharmaceuticals, Inc.Inventors: Pier F. Cirillo, Steffen Breitfelder, Usha R. Patel, John R. Proudfoot, Alan D. Swinamer, Hidenori Takahashi, Thomas A. Gilmore, Rajiv Sharma