Abstract: A semiconductor device exhibits a first metal layer, made of a first metal, with at least one contiguous subsection. At least one second metal layer, made of a second metal, is placed on the contiguous subsection of the first metal layer. The second metal is harder than the first metal. The second metal layer is structured to form at least two layer regions, which are disposed on the contiguous subsection of the first metal layer. The second metal exhibits a boron-containing or phosphorus-containing metal or a boron-containing or phosphorus-containing metal alloy.

Abstract: A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.

Abstract: In a method for producing bases with external contacts for surface mounting on circuit mounts, bases with external contacts are electrodeposited on semiconductor wafers or semiconductor chips. Subsequently, electrodeposited bases with external contacts are heat treated on the semiconductor wafers or the semiconductor chips at temperatures below the melting temperature of the deposited contact base material. Thereafter, a so-called RTP process is carried out in the form of a high-temperature interval in which the melting temperature is reached. Subsequently, the surfaces of the bases with external contacts are wet etched, the overall method being terminated by a cooling and drying operation. The bases with external contacts thus produced can be reliably surface mounted on circuit mounts.

Abstract: A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.

Abstract: A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The method includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of a holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.

Abstract: A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.

Abstract: A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.

Abstract: A semiconductor device exhibits a first metal layer, made of a first metal, with at least one contiguous subsection. At least one second metal layer, made of a second metal, is placed on the contiguous subsection of the first metal layer. The second metal is harder than the first metal. The second metal layer is structured to form at least two layer regions, which are disposed on the contiguous subsection of the first metal layer. The second metal exhibits a boron-containing or phosphorus-containing metal or a boron-containing or phosphorus-containing metal alloy.

Abstract: Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

Abstract: In a method for producing bases with external contacts for surface mounting on circuit mounts, bases with external contacts are electrodeposited on semiconductor wafers or semiconductor chips. Subsequently, electrodeposited bases with external contacts are heat treated on the semiconductor wafers or the semiconductor chips at temperatures below the melting temperature of the deposited contact base material. Thereafter, a so-called RTP process is carried out in the form of a high-temperature interval in which the melting temperature is reached. Subsequently, the surfaces of the bases with external contacts are wet etched, the overall method being terminated by a cooling and drying operation. The bases with external contacts thus produced can be reliably surface mounted on circuit mounts.

Abstract: A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The method includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of a holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.