Abstract: A III-nitride power semiconductor device that includes a two dimensional electron gas having a reduced charge region under the gate thereof.

Abstract: A starting wafer for high voltage semiconductor devices is formed by implanting arsenic into the top surface of a p type silicon substrate wafer to a depth of about 0.1 micron. A N type non-graded epitaxial layer is then grown atop the substrate without any diffusion step so that the arsenic is not intentionally driven. Device junction are then diffused into the epitaxially grown layer.

Abstract: A III-nitride power semiconductor device that includes a two dimensional electron gas having a low field region under the gate thereof.

Abstract: A method for fabrication of a III-nitride film over a silicon wafer that includes forming control joints to allow for overall stress relief in the III-nitride film during the growth thereof.

Abstract: A III-nitride power semiconductor device that includes a two dimensional electron gas having a low field region under the gate thereof.

Abstract: A low contact resistance ohmic contact for a III-Nitride or compound semiconductor wafer or die consists of 4 layers of Ti, AlSi, Ti and TiW. The AlSi has about 1% Si. The layers are sequentially deposited as by sputtering, are patterned and plasma etched and then annealed in a rapid thermal anneal process. The use of AlSi in place of pure Al reduces contact resistance by about 15% to 30%.

Abstract: A merged gate transistor in accordance with an embodiment of the present invention includes a semiconductor element, a supply electrode electrically connected to a top surface of the semiconductor element, drain electrode electrically connected to the top surface of the semiconductor element and spaced laterally away from the supply electrode, a first gate positioned between the supply electrode and the drain electrode and capacitively coupled to the semiconductor element to form a first portion of the transistor and a second gate positioned adjacent to the first gate, and between the supply electrode and the drain electrode to form a second portion of the transistor, wherein the second gate is also capacitively coupled to the semiconductor element.

Abstract: A starting wafer for high voltage semiconductor devices is formed by implanting arsenic into the top surface of a p type silicon substrate wafer to a depth of about 0.1 micron. A N type non-graded epitaxial layer is then grown atop the substrate without any diffusion step so that the arsenic is not intentionally driven. Device junction are then diffused into the epitaxially grown layer.

Abstract: A starting wafer for high voltage semiconductor devices is formed by implanting arsenic into the top surface of a p type silicon substrate wafer to a depth of about 0.1 micron. A N type non-graded epitaxial layer is then grown atop the substrate without any diffusion step so that the arsenic is not intentionally driven. Device junction are then diffused into the epitaxially grown layer.

Abstract: A crystalline material substantially free of framework phosphorus and comprising a CHA framework type molecular sieve with stacking faults or at least one intergrown phase of a CHA framework type molecular sieve and an AEI framework type molecular sieve, wherein said material, in its calcined, anhydrous form, has a composition involving the molar relationship: (n)X2O3:YO2, wherein X is a trivalent element; Y is a tetravalent element; and n is from 0 to about 0.5. The material exhibits activity and selectivity in the conversion of methanol to lower olefins, especially ethylene and propylene.

Abstract: A vertical MOSFET has a substrate of a first conductivity type. A channel region of a second conductivity type is diffused into the substrate. A gate is disposed at least partially over the channel region. A source region of a second conductivity type is disposed proximate to the gate and adjacent to the channel region. The channel region includes a depletion implant area proximate to the gate. The depletion implant species is of the second conductivity type to reduce the concentration of the first conductivity type in the channel region without increasing the conductivity in the drain/drift region.

Abstract: A process is disclosed for selectively producing one or more aromatic compounds selected from benzene, toluene, para-xylene, meta-xylene, ortho-xylene, ethylbenzene and mixtures thereof from a feed containing C6–C20 hydrocarbons and/or C6–C8 alcohols. The feed is initially subjected to a chemical conversion step to increase the concentration of C6–C8 paraffin and/or olefin precursors of said one or more aromatic compounds and then resulting precursor-enriched feed is then contacted with a dehydrocyclization catalyst under conditions of temperature and hydrogen partial pressure sufficient to effect dehydrocyclization of said paraffin and/or olefin precursors. A product rich in the desired aromatic compound(s) can then be recovered from the dehydrocyclization effluent.

Abstract: This disclosure provides a stand alone printing optical disc player/recorder for use in connection with CD's, DVD's, and Mini-Discs. In a particular embodiment the printing player/recorder has a combined player/recorder unit and an inkjet printer. Using a platter transport the printer player/recorder is capable of reading or writing information to a provided optical disc and then printing a label upon the optical disc without removing the disc from the system. The label printed may also be generated from the information read from or written to the optical disc itself thereby insuring a match between the label and the information encoded upon the optical disc. Associated methods of use are also provided.

Abstract: A starting wafer for high voltage semiconductor devices is formed by implanting arsenic into the top surface of a p type silicon substrate wafer to a depth of about 0.1 micron. A N type non-graded epitaxial layer is then grown atop the substrate without any diffusion step so that the arsenic is not intentionally driven. Device junction are then diffused into the epitaxially grown layer.

Abstract: A power MOSFET die with a minimized figure of merit has of a planar stripe MOSFET geometry in which parallel diffused bases (or channels) are formed by implantation and diffusion of impurities through parallel elongated and spaced polysilicon stripes wherein the polysilicon line width is from about 3.2 to 3.4 microns, preferably 3.4 microns; the polyline spacing is from about 1 to 4 microns, preferably 1.5 microns and the diffused bases are spaced by greater than about 0.8 microns. The polysilicon stripes act as masks to the sequential formation of first base stripes, the source stripes and second higher concentration base stripes which are deeper than the first base stripes. Insulation side wall spacers are used to define a contact etch for the source contact. The above design geometry is used for both the forward control MOSFET and the synchronous rectifier MOSFET of a buck converter circuit.

Abstract: This disclosure provides a stand alone printing optical disc player/recorder for use in connection with CD's, DVD's, and Mini-Discs. In a particular embodiment the printing player/recorder has a combined player/recorder unit and an inkjet printer. Using a platter transport the printer player/recorder is capable of reading or writing information to a provided optical disc and then printing a label upon the optical disc without removing the disc from the system. The label printed may also be generated from the information read from or written to the optical disc itself thereby insuring a match between the label and the information encoded upon the optical disc. Associated methods of use are also provided.

Abstract: An apparatus for laser interrogation of surface agents moving relative to the apparatus. A receiver telescope includes a secondary reflector that may compensate for variations in distance from a target to the laser. The secondary reflector relies on a distance to target signal that may be collected at a point substantially away from the target, in the direction of relative motion, to allow a focusing mechanism time to react.

Abstract: A vertical conduction MOSFET having a reduced on resistance RDSON as well as reduced threshold voltage Vth, and an improved resistance to punchthrough and walkout has an extremely shallow source diffusion, of less than 0.3 microns in depth and an extremely shallow channel diffusion, of less than about 3 microns in depth. In a P channel version, phosphorus is implanted into the bottom of a contact trench and into the channel region with an implant energy of 400 keV for a singly charged phosphorus ion or 200 keV for a doubly charged ion, thereby to prevent walkout of the threshold voltage.

Abstract: A system for processing auxiliary information included in a television signal provides on-screen bitmapped displays using limited computing and memory resources. According to an exemplary embodiment, closed caption data is received in a vertical blanking interval (VBI) of a television signal or in one or more packets of digital data. A display list is generated in dependence upon the received closed caption data. The display list includes a bitmap pointer which points to bitmap data in a memory. The display list may also include: resolution data indicating a number of bits per pixel to be provided in the closed caption display, height data indicating a character height in pixels for the closed caption display, and width data indicating a character width in pixels for the closed caption display. The bitmap data is output as pixel data for the closed caption display. The closed caption display may be scrolled by manipulating the bitmap pointer.

Abstract: A process is disclosed for selectively producing one or more aromatic compounds selected from benzene, toluene, para-xylene, meta-xylene, ortho-xylene, ethylbenzene and mixtures thereof from a feed containing C6-C20 hydrocarbons and/or C6-C8 alcohols. The feed is initially subjected to a chemical conversion step to increase the concentration of C6-C8 paraffin and/or olefin precursors of said one or more aromatic compounds and then resulting precursor-enriched feed is then contacted with a dehydrocyclization catalyst under conditions of temperature and hydrogen partial pressure sufficient to effect dehydrocyclization of said paraffin and/or olefin precursors. A product rich in the desired aromatic compound(s) can then be recovered from the dehydrocyclization effluent.