Patents by Inventor Thomas J. Houlahan, JR.
Thomas J. Houlahan, JR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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System for coupling RF power into LINACs and bellows coating by magnetron sputtering with kick pulse
Patent number: 12009192Abstract: A system and associated method are described for depositing high-quality films for providing a coating on a three-dimensional surface such as an internal surface of a bellows structure. The system includes a magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along a sputter target. The system further includes an elongated sputtering electrode material tube surrounding the magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along the sputter target. During operation, the system generates and controls ion flux for direct current high-power impulse magnetron sputtering. During operation logic circuitry issues a control signal to control a kick pulse property of a sustained positive voltage kick pulse taken from the group consisting of: onset delay, amplitude and duration.Type: GrantFiled: May 17, 2021Date of Patent: June 11, 2024Assignee: Starfire Industries LLCInventors: Thomas J. Houlahan, Jr., Daniel P. Menet, Ian F. Haehnlein, Ivan A. Shchelkanov, Robert A. Stubbers, Brian E. Jurczyk -
Publication number: 20240074465Abstract: A food irradiation system including a plurality of compact linac systems is described herein. Each compact linac system, of the plurality of compact linac systems, includes: a high energy particle beam source providing a particle beam at up to 10 MeV; an emission target assembly configured to generate bremsstrahlung x-rays when impacted by particles of the particle beam; and a drift tube through which the particle beam passes on a path from the high energy particle beam source to the emission target assembly. The emission target assembly is positioned at a distal end of the drift tube for direct impingement of the particle beam to generate the bremsstrahlung x-rays in a directed radiation beam. Ones of the plurality of compact linac systems are individually positioned such that, as a group, the plurality of compact linac systems provide directed radiation beam coverage at prescribed radiation dose levels for an overall cumulative volume.Type: ApplicationFiled: September 5, 2023Publication date: March 7, 2024Inventors: Robert A. Stubbers, Brian E. Jurczyk, Thomas J. Houlahan, JR., Matthew D. Coventry, Darren A. Alman
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Publication number: 20230360898Abstract: A system and associated method are described. The system includes a controlled power supply for generating electrical pulses for a plasma discharge source. The controlled power supply includes an output pulse rail, a direct current power source, and energy storage capacitors, coupled to the direct current power source. The energy storage capacitors are configured to supply: a main negative rail voltage, a positive kick rail voltage, and at least one intermediate rail voltage. A controlled pulse power transistor group includes: a plurality of transistors interposed between the energy storage capacitors and the output pulse rail, and a transmission control configured to control power transmission. The transmission control is configured to specify a positive kick pulse waveform defined by user-specified parameters that configure operation of the plurality of transistors to control timing and voltage of the positive kick rail voltage and the at least one intermediate rail voltage.Type: ApplicationFiled: May 4, 2023Publication date: November 9, 2023Inventors: Robert A. Stubbers, Brian E. Jurczyk, Ian F. Haehnlein, Elizabeth Atkinson, Thomas J. Houlahan, JR.
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Publication number: 20220230859Abstract: A radial magnetron system for plasma surface modification and deposition of high-quality coatings for multi-dimensional structures is described. The system includes an axial electrode, a target material disposed on a portion of the axial electrode, an applied potential from an external electrical power source, and a high-current contact attached to the axial electrode for the applied potential. The system further includes a primary permanent magnet assembly comprising individual magnetic material elements configured to produce a target-region magnetic field for generating a Hall-effect dense plasma region under application of the applied potential to the axial electrode, and a magnet substrate that supports the primary permanent magnet assembly within the axial electrode. The magnet substrate is configured to provide a passageway for cooling the primary permanent magnet assembly and the axial electrode.Type: ApplicationFiled: January 20, 2022Publication date: July 21, 2022Inventors: Thomas J. Houlahan, JR., Daniel P. Menet, Ian F. Haehnlein, Robert A. Stubbers, Brian E. Jurczyk
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SYSTEM FOR COUPLING RF POWER INTO LINACS AND BELLOWS COATING BY MAGNETRON SPUTTERING WITH KICK PULSE
Publication number: 20210327694Abstract: A system and associated method are described for depositing high-quality films for providing a coating on a three-dimensional surface such as an internal surface of a bellows structure. The system includes a magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along a sputter target. The system further includes an elongated sputtering electrode material tube surrounding the magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along the sputter target. During operation, the system generates and controls ion flux for direct current high-power impulse magnetron sputtering. During operation logic circuitry issues a control signal to control a kick pulse property of a sustained positive voltage kick pulse taken from the group consisting of: onset delay, amplitude and duration.Type: ApplicationFiled: May 17, 2021Publication date: October 21, 2021Inventors: Thomas J. Houlahan, JR., Daniel P. Menet, Ian F. Haehnlein, Ivan A. Shchelkanov, Robert A. Stubbers, Brian E. Jurczyk -
Patent number: 11008650Abstract: A system and associated method are described for depositing high-quality films for providing a nanolayered coating on a three-dimensional surface. The system includes a magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along a sputter target. The system further includes an elongated sputtering electrode material tube surrounding the magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along the sputter target. During operation, the system generates and controls ion flux for direct current high-power impulse magnetron sputtering. During operation logic circuitry issues a control signal to control a kick pulse property of a sustained positive voltage kick pulse taken from the group consisting of: onset delay, amplitude and duration.Type: GrantFiled: April 14, 2020Date of Patent: May 18, 2021Assignee: Starfire Industries LLCInventors: Thomas J. Houlahan, Jr., Daniel P. Menet, Ian F. Haehnlein, Ivan A. Shchelkanov, Robert A. Stubbers, Brian E. Jurczyk
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Publication number: 20200377995Abstract: A system and associated method are described for depositing high-quality films for providing a nanolayered coating on a three-dimensional surface. The system includes a magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along a sputter target. The system further includes an elongated sputtering electrode material tube surrounding the magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along the sputter target. During operation, the system generates and controls ion flux for direct current high-power impulse magnetron sputtering. During operation logic circuitry issues a control signal to control a kick pulse property of a sustained positive voltage kick pulse taken from the group consisting of: onset delay, amplitude and duration.Type: ApplicationFiled: April 14, 2020Publication date: December 3, 2020Inventors: Thomas J. Houlahan, JR., Daniel P. Menet, Ian F. Haehnlein, Ivan A. Shchelkanov, Robert A. Stubbers, Brian E. Jurczyk
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Patent number: 10624199Abstract: A system for injecting radio frequency (RF) pulses into an RF linear accelerator (RF LINAC) cavity is described. In accordance with the description an RF power amplifying element, typically a compact planar triode (CPT), is directly mounted to an outside of a hermetically sealed RF cavity. The direct mounting of the RF power amplifying element places the antenna—responsible for coupling power into the RF cavity—physically on the RF cavity side of a hermetic high-voltage (HV) break. The RF input, RF circuitry, biasing circuitry, and RF power amplifier are all outside of the vacuum cavity region. The direct mounting arrangement facilitates easy inspection and replacement of the RF power amplifier, the RF input and biasing circuitry. The direct mounting arrangement also mitigates the deleterious effects of multipactoring associated with placing the RF power amplifier and associated RF circuitry in the vacuum environment of the RF LINAC cavity.Type: GrantFiled: November 3, 2017Date of Patent: April 14, 2020Assignee: Starfire Industries, LLCInventors: Robert A. Stubbers, Brian E. Jurczyk, Thomas J. Houlahan, Jr., James M. Potter
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Publication number: 20180124910Abstract: A system for injecting radio frequency (RF) pulses into an RF linear accelerator (RF LINAC) cavity is described. In accordance with the description an RF power amplifying element, typically a compact planar triode (CPT), is directly mounted to an outside of a hermetically sealed RF cavity. The direct mounting of the RF power amplifying element places the antenna—responsible for coupling power into the RF cavity—physically on the RF cavity side of a hermetic high-voltage (HV) break. The RF input, RF circuitry, biasing circuitry, and RF power amplifier are all outside of the vacuum cavity region. The direct mounting arrangement facilitates easy inspection and replacement of the RF power amplifier, the RF input and biasing circuitry. The direct mounting arrangement also mitigates the deleterious effects of multipactoring associated with placing the RF power amplifier and associated RF circuitry in the vacuum environment of the RF LINAC cavity.Type: ApplicationFiled: November 3, 2017Publication date: May 3, 2018Inventors: Robert A. Stubbers, Brian E. Jurczyk, Thomas J. Houlahan, JR., James M. Potter