Abstract: N,N' disubstituted perylene diamide, useful in the fabrication of semiconductor devices, which exhibit good planarity and gap-fill characteristics, the cured composites of which are capable of withstanding temperatures in excess of 500.degree. C.

Abstract: A process for producing a plurality of metallized vias in a polyimide dielectric is disclosed. The process includes depositing a polyimide precursor, then a silane and finally a metal, after patterning the polyimide and silane. The sandwich is heated to completely imidize the polyimide, crosslink the silane and anneal the metal simultaneously. The excess metal overlying the polyimide between the vias is removed by chemical mechanical polishing using the crosslinked silane as a polish stop.

Abstract: A process is disclosed for forming multilayered polyimide structure from negative photosensitive polyimide precursors. An initial polyimide layer is deposited and imagewise exposed. The unexposed portions of the initial polyimide layer are inhibited and then a second polyimide layer is deposited and likewise imagewise exposed. The films are developed, thereby forming a multilayer polyimide structure. After formation of the multilayer polyimide structure, a conductive material is applied on a substrate and then the polyimide layers are lifted off thereby forming a desired pattern of metallization.

Abstract: Thermostable compounds are prepared by mixing perylene dianhydride with one or more aminosilanes in a molar ratio of 1:4 in an inert solvent, and the aminosilanes may comprise aminoalkylakoxysilanes. Upon heating the mixture a thermostable coating is formed. Prior to heating the mixture may be spin-applied to a substrate. The coating may be used in semiconductor device fabrication as the mixture has good spin-on characteristics with the cured compound being thermally stable over 600.degree. C. and having good etch characteristics.

Abstract: A process for producing a plurality of metallized vias in a polyimide dielectric is disclosed. The process includes depositing a polyimide precursor, then a silane and finally a metal, after patterning the polyimide and silane. The sandwich is heated to completely imidize the polyimide, crosslink the silane and anneal the metal simultaneously. The excess metal overlying the polyimide between the vias is removed by chemical mechanical polishing using the crosslinked silane as a polish stop.