Abstract: A method is presented for forming a fully aligned via (FAV) structure. The method includes depositing a first dielectric adjacent a conductive material, forming a surface aligned monolayer (SAM) over the conductive material, the SAM defining a long chain SAM formed by a layer-by-layer growth technique, depositing a second dielectric over the SAM and the first dielectric, performing chemical mechanical polishing (CMP) to planarize the second dielectric, and etching the SAM to form the FAV structure.

Abstract: A method includes forming a metallic interconnect structure on a semiconductor substrate where the metallic interconnect structure comprises a plurality of metal lines with adjacent metal lines separated by a gap therebetween. The method further includes selectively depositing a first low-k dielectric material onto the semiconductor substrate and onto exposed surfaces of the metal lines of the metallic interconnect structure to form a barrier on at least the metal lines. The barrier is configured to minimize oxidation and diffusion of metal of the metal lines. The method also includes depositing a flowable second low-k dielectric material onto the semiconductor substrate to form a dielectric layer encapsulating the barrier and the metallic interconnect structure.

Abstract: A method is presented for forming a fully aligned via (FAV) structure. The method includes depositing a first dielectric adjacent a conductive material, forming a surface aligned monolayer (SAM) over the conductive material, the SAM defining a long chain SAM formed by a layer-by-layer growth technique, depositing a second dielectric over the SAM and the first dielectric, performing chemical mechanical polishing (CMP) to planarize the second dielectric, and etching the SAM to form the FAV structure.

Abstract: A method includes forming a metallic interconnect structure on a semiconductor substrate where the metallic interconnect structure comprises a plurality of metal lines with adjacent metal lines separated by a gap therebetween. The method further includes selectively depositing a first low-k dielectric material onto the semiconductor substrate and onto exposed surfaces of the metal lines of the metal interconnect structure to form a barrier on at least the metal lines. The barrier is configured to minimize oxidation and diffusion of metal of the metal lines. The method also includes depositing a flowable second low-k dielectric material onto the semiconductor structure to form a dielectric layer encapsulating the barrier and the metallic interconnect structure.

Abstract: A dielectric material incorporating a graded carbon adhesion layer whereby the content of C increases with layer thickness and a multiphase ultra low k dielectric comprising a porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa is described. A semiconductor integrated circuit incorporating the above dielectric material in interconnect wiring is described and a semiconductor integrated circuit incorporating the above multiphase ultra low k dielectric in a gate stack spacer of a FET is described.

Abstract: A first PECVD process incorporating a silicon oxide precursor alone and then with an organo-silicon precursor with increasing flow while the flow of the silicon oxide precursor is reduced to zero provides a graded carbon adhesion layer whereby the content of C increases with layer thickness and a second PECVD process incorporating an organo-silicon precursor including an organic porogen provides a multiphase ultra-low k dielectric. The multiphase ultra-low k PECVD process uses high frequency radio frequency power just above plasma initiation in a PECVD chamber. An energy post treatment is also provided. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa is formed.

Abstract: A lock bolt release system operable with a door bolt supported by a door providing access to a secure area. A pawl is pivotally mounted on a distal end of a lock bolt, and the pawl is pivoted by operation of the door bolt prior to the lock bolt being movable by the door bolt. A wedge block is movably mounted on the lock bolt and is effective to block motion of the pawl and the door bolt. A stop member is located adjacent the wedge block and blocks motion of the wedge block, thereby preventing the door bolt from being disengaged from the structure. The stop member is movable, which permits the wedge block to be moved by the pawl and the door bolt to contact and move the lock bolt, thus, permitting the door bolt to be disengaged from the structure.

Abstract: A dead bolt lock system having one or more security locks in conjunction with a dead bolt to provide various levels of security access to a door. An inertia assembly restrains movement of the dead bolt when a shock load is applied to the door, but allows the dead bolt to move when a shock load is not present. The inertia assembly includes an actuator weight and a bolt lock lever that can translate and rotate in response to the application of the shock load. In addition, the inertia assembly includes a return spring that biases the inertia assembly back into its original position for facilitating movement of the dead bolt after the application of the shock load.

Abstract: A combination lock configured to resist surreptitious compromise by radiographic imaging and automatic dialers. In one aspect, the combination lock may include gate wheels having one true gate positioned among a plurality of false gates in which the true gate is configured for disguising its angular position among the false gates. Additional resistance against radiation imaging is provided by the rotational symmetry of the features of the gate wheels. The combination lock may include a combination scrambler that rotates a gate wheel when an incorrect combination is dialed for defeating the operation of automatic dialers. The combination lock may also include a combination change key and the gate wheels may be configured to be selectively disengaged from the combination dial by the combination change key so that the lock combination may be modified.

Abstract: A combination lock configured to resist surreptitious compromise by radiographic imaging and automatic dialers. In one aspect, the combination lock may include gate wheels having one true gate positioned among a plurality of false gates in which the true gate is configured for disguising its angular position among the false gates. Additional resistance against radiation imaging is provided by the rotational symmetry of the features of the gate wheels. The combination lock may include a combination scrambler that rotates a gate wheel when an incorrect combination is dialed for defeating the operation of automatic dialers. The combination lock may also include a combination change key and the gate wheels may be configured to be selectively disengaged from the combination dial by the combination change key so that the lock combination may be modified.

Abstract: In accordance with one aspect of the invention, a kicker arm-pawl lock mechanism rotates a number one wheel of a combination lock a predetermined distance to require resetting each number of a combination during lock manipulation. A drive cam-travel arm and bolt lock mechanism assures complete scrambling of the combination by requiring rotation of all wheels prior to bolt extension into a locked position. Another aspect of the invention includes a lock lever and drive cam mechanism which requires opening of the combination lock once a combination has been correctly dialed. A lock lever and pivoting pawl lock mechanism prevents lockout conditions by diverting forces applied to the combination lock bolt to the lock casing rather than the lock lever.