Abstract: A zero detection circuit includes a chain of masked OR circuits. Each masked OR circuit includes data inputs. Each data input is configured to receive a respective data input bit. Each masked OR circuit further includes an input mask input to receive one or more input masking bits, an output mask input to receive an output masking bit and a data output. The zero detection circuit is configured to output a bit equal to an OR combination, masked with the output masking bit, of the data input bits, each demasked with an input masking bit of the one or more input masking bits. One of the inputs of each masked OR circuit except the first masked OR circuit of the chain of masked OR circuits is coupled to the data output of the masked OR circuit preceding the masked OR circuit in the chain of masked OR circuits.

Abstract: In various embodiments, a circuit arrangement is provided. The circuit arrangement may include a detection circuit, which is designed to detect light attacks on the circuit arrangement; a processing circuit, which is designed to initiate a current flow through a line for each light attack detected by the detection circuit; and a control circuit, which is designed to enable functioning of a component of the circuit arrangement depending on the conducting state of the line.

Abstract: A method for manufacturing a digital circuit is described including forming a plurality of field effect transistor pairs, connecting the field effect transistors of the field effect transistor pairs such that in response to a first transition from a first state of two nodes of the digital circuit and in response to a second transition from a second state of the nodes of the digital circuit the nodes each have an undefined logic state when, for each field effect transistor pair, the threshold voltages of the field effect transistors of the field effect transistor pair are equal and setting the threshold voltages of the field effect transistors of the field effect transistor pairs such that the nodes each have a predetermined defined logic state in response to the first transition and in response to the second transition.

Abstract: A method for manufacturing a digital circuit is described including forming a plurality of field effect transistor pairs, connecting the field effect transistors of the field effect transistor pairs such that in response to a first transition from a first state of two nodes of the digital circuit and in response to a second transition from a second state of the nodes of the digital circuit the nodes each have an undefined logic state when, for each field effect transistor pair, the threshold voltages of the field effect transistors of the field effect transistor pair are equal and setting the threshold voltages of the field effect transistors of the field effect transistor pairs such that the nodes each have a predetermined defined logic state in response to the first transition and in response to the second transition.

Abstract: A method for manufacturing a digital circuit is described including forming a plurality of field effect transistor pairs, connecting the field effect transistors of the field effect transistor pairs such that in response to a first transition from a first state of two nodes of the digital circuit and in response to a second transition from a second state of the nodes of the digital circuit the nodes each have an undefined logic state when, for each field effect transistor pair, the threshold voltages of the field effect transistors of the field effect transistor pair are equal and setting the threshold voltages of the field effect transistors of the field effect transistor pairs such that the nodes each have a predetermined defined logic state in response to the first transition and in response to the second transition.

Abstract: According to various embodiments, a memory arrangement is described having a first bit line, a first precharge device for precharging the first bit line to a precharged state, a second bit line, a second precharge device for precharging the second bit line to a precharged state, a memory control apparatus that is set up to interrupt the precharging of the first bit line by the first precharge device for memory access and to interrupt the precharging of the second bit line by the second precharge device for the memory access, a memory access apparatus that is set up to follow the interruption of the precharging of the first bit line and the interruption of the precharging of the second bit line by performing the memory access and reading the state of the second bit line, and a detector that is set up to take the state of the second bit line as a basis for detecting an attack on the memory arrangement.

Abstract: A method for manufacturing a digital circuit is described comprising forming two field effect transistors, connecting the field effect transistors such that an output signal of the digital circuit in response to a predetermined input has an undefined logic state when the threshold voltages of the field effect transistors are equal and setting the threshold voltages of at least one of the field effect transistors such that the output signal of the digital circuit in response to the predetermined input has a predetermined defined logic state.

Abstract: In accordance with one embodiment, a circuit arrangement is provided including a circuit having a first terminal for a first supply potential and a second terminal for a second supply potential, wherein the first terminal is coupled to the first supply potential; a switch, by means of which the second terminal can be coupled to the second supply potential; a voltage source coupled to the second terminal; and a control device designed to open the switch in reaction to receiving a turn-off signal in an operating mode in which the switch is closed, and subsequently to control the voltage source in such a way that it varies the potential of the second terminal in the direction of the first supply potential.

Abstract: According to one embodiment, a chip has a circuit with at least one p channel field effect transistor (FET); at least one n channel FET; a first and a second power supply terminal; wherein the n channel FET, if supplied with the upper supply potential at its gate, supplies the lower supply potential to the gate of the p channel FET; and the p channel FET, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the n channel FET; wherein the logic state of the gate of the p channel FET and of the n channel FET can only be changed by at least one of the first and second supply voltage to the circuit; and a connection coupled to the gate of the p channel FET or the n channel FET and a further component of the semiconductor chip.

Abstract: According to one embodiment, a chip has a circuit with at least one p channel field effect transistor (FET); at least one n channel FET; a first and a second power supply terminal; wherein the n channel FET, if supplied with the upper supply potential at its gate, supplies the lower supply potential to the gate of the p channel FET; and the p channel FET, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the n channel FET; wherein the logic state of the gate of the p channel FET and of the n channel FET can only be changed by at least one of the first and second supply voltage to the circuit; and a connection coupled to the gate of the p channel FET or the n channel FET and a further component of the semiconductor chip.

Abstract: A semiconductor component includes a semiconductor substrate, and a doped well having a well terminal and a transistor structure having at least one potential terminal formed in the semiconductor substrate. The transistor structure has a parasitic thyristor, and is at least partly arranged in the doped well. The potential terminal and the well terminal are connected via a resistor.

Abstract: In accordance with various embodiments, a circuit is provided, including an output node, a first potential varying stage, which is designed to couple the output node to a supply potential in reaction to an input signal, and a second potential varying stage, which is designed to couple the output node to the supply potential if the difference between the potential of the output node and the supply potential lies below a predefined threshold value.

Abstract: According to one embodiment, a chip is described comprising a plurality of supply lines delimiting a plurality of cell areas and a gate comprising a first transistor and a second transistor, wherein the first transistor is located in a first cell area of the plurality of cell areas and the second transistor is located in a second cell area of the plurality of cell areas such that a supply line of the plurality of supply lines lies between the first cell area and the second cell area.

Abstract: A method for reconstructing a physically uncloneable function (PUF) A for use in an electronic device is provided. The method includes generating a potentially erroneous PUF At and performing a preliminary correction of the potentially erroneous PUF At by means of a stored correction vector Deltat-1, to obtain a preliminarily corrected PUF Bt. The PUF A is reconstructed from the preliminarily corrected PUF Bt by means of an error correction algorithm. A corresponding apparatus is also provided.

Abstract: A method for manufacturing a digital circuit is described comprising forming two field effect transistors, connecting the field effect transistors such that an output signal of the digital circuit in response to a predetermined input signal has an undefined logic state when the threshold voltages of the field effect transistors are equal and setting the threshold voltages of at least one of the field effect transistors such that the output signal of the digital circuit in response to the predetermined input signal has a predetermined defined logic state.

Abstract: According to one embodiment, a processing circuit is described including a first input path and a second input path, a processing element configured to receive a first input bit and a second input bit via the first input path and the second input path and configured to perform a logic operation which is commutative with respect to the first input bit and the second input bit and a sorter configured to distribute the first input bit and the second input bit to the first input path and the second input path according to a predetermined sorting rule.

Abstract: A cryptographic processor is described comprising a processing circuit configured to perform a round function of an iterated cryptographic algorithm, a controller configured to control the processing circuit to apply a plurality of iterations of the round function on a message to process the message in accordance with the iterated cryptographic algorithm and a transformation circuit configured to transform the input of a second iteration of the round function following a first iteration of the round function of the plurality of iterations and to supply the transformed input as input to the second iteration wherein the transformation circuit is implemented using a circuit camouflage technique.

Abstract: In accordance with one embodiment, a method for accessing a memory is provided, including carrying out a first access to the memory and charging, for a memory cell, a bit line coupled to the memory cell to a value which is stored or to be stored in the memory cell, holding the state of the bit line until a second access, which follows the first access, and outputting the held state if the second access is a read access to the memory cell.

Abstract: According to one embodiment, a chip has a circuit with at least one p channel field effect transistor (FET); at least one n channel FET; a first and a second power supply terminal; wherein the n channel FET, if supplied with the upper supply potential at its gate, supplies the lower supply potential to the gate of the p channel FET; and the p channel FET, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the n channel FET; wherein the logic state of the gate of the p channel FET and of the n channel FET can only be changed by at least one of the first and second supply voltage to the circuit; and a connection coupled to the gate of the p channel FET or the n channel FET and a further component of the semiconductor chip.

Abstract: According to one embodiment, a chip is described comprising a plurality of supply lines delimiting a plurality of cell areas and a gate comprising a first transistor and a second transistor, wherein the first transistor is located in a first cell area of the plurality of cell areas and the second transistor is located in a second cell area of the plurality of cell areas such that a supply line of the plurality of supply lines lies between the first cell area and the second cell area.